Abstract: An exemplary memory controller includes a refresh manager circuit configured to provide a refresh command to a memory system via a command and address bus to initiate a refresh operation at a bank of the memory system. In response to provision of the refresh command, the refresh manager circuit is further configured to issue a bank status command to the host to indicate that the bank of the memory system has switched to unavailable.

Abstract: Apparatuses, systems, and methods for module level error correction. Multiple memory devices a packaged together in a memory module. The module includes a module error correction code (ECC) circuit which pools information multiple memory devices on the module. In an example read operation, multiple memory devices each provide a codeword which includes data bits and parity bits. The codewords may include data bits provided along a data bus and parity bits provided along a parity bus. The ECC circuit pools the codewords and detects errors in the pooled codewords.

Abstract: Apparatuses, systems, and methods for module level error correction. Multiple memory devices a packaged together in a memory module. The module includes a module error correction code (ECC) circuit which pools information multiple memory devices on the module. In an example read operation, multiple memory devices each provide a codeword which includes data bits and parity bits. The codewords may include data bits provided along a data bus and parity bits provided along a parity bus. The ECC circuit pools the codewords and detects errors in the pooled codewords.

Abstract: Apparatuses, systems, and methods for module level error correction. Multiple memory devices a packaged together in a memory module. The module includes a module error correction code (ECC) circuit which pools information multiple memory devices on the module. In an example read operation, multiple memory devices each provide a codeword which includes data bits and parity bits. The codewords may include data bits provided along a data bus and parity bits provided along a parity bus. The ECC circuit pools the codewords and detects errors in the pooled codewords.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for bad row mode. The memory may prevent proper access operations (e.g., read operations) from being performed on a selected bad row of the memory as part of a bad row mode. For example, the memory may store a bad row address and when an access address matches the bad row address, may suppress one or more signals, change data read from the address, or combinations thereof. The bad row mode may be used to provide a positive control for post package repair (PPR) operations on the memory. A controller may enter the memory into bad row mode and then test the memory to determine if the selected bad row can be located and repaired via PPR.

Abstract: Apparatuses, systems, and methods for memory initiated calibration. The memory includes a termination circuit with a tunable resistor and a calibration detection circuit with a replica tunable resistor. The calibration detection circuit measures a resistance of the replica tunable resistor and provides a calibration request signal if the resistance is outside a tolerance. Responsive to the calibration request signal, a controller of the memory schedules the memory for a calibration operation.

Abstract: Systems, apparatuses, and methods related to bloom filter implementation into a controller are described. A memory device is coupled to a memory controller. The memory controller is configured to implement a counting bloom filter, increment the counting bloom filter in response to a row activate command of the memory device, determine whether a value of the counting bloom filter exceeds a threshold value, and perform an action in response to the value exceeding the threshold value.

Abstract: An apparatus can include a number of memory devices and a controller coupled to one or more of the number of memory devices. The controller can be configured to determine whether a quantity of row activations directed to a row of the memory devices exceeds a row hammer criterion. The controller can be configured to select, responsive to determining that the row hammer criterion is met, a row hammer mitigation response from a plurality of row hammer mitigation responses available for initiation. The controller can be configured to initiate the selected row hammer mitigation response.

Abstract: Apparatuses, systems, and methods for reset of row hammer detector circuits. A row hammer detector circuit includes a hash circuit configured to store a hash key and provide a first count value based on a hash between the hash key and a row address corresponding to a row of memory cells of a memory array. The row hammer detector circuit is configured to provide a match signal in response to the count value exceeding a threshold to cause a targeted refresh of a victim row adjacent the row of memory cells. In response to exit from a self-refresh mode, the hash circuit is configured to update the stored hash key with a new hash key.

Abstract: Systems, methods, and apparatus for memory device security and row hammer mitigation are described. A control mechanism may be implemented in a front-end and/or a back-end of a memory sub-system to refresh rows of the memory. A row activation command having a row address at control circuitry of a memory sub-system and incrementing a first count of a row counter corresponding to the row address stored in a content addressable memory (CAM) of the memory sub-system may be received. Control circuitry may determine whether the first count is greater than a row hammer threshold (RHT) minus a second count of a CAM decrease counter (CDC); the second count may be incremented each time the CAM is full. A refresh command to the row address may be issued when a determination is made that the first count is greater than the RHT minus the second count.

Abstract: Apparatuses, systems, and methods for per row error correct and scrub (pRECS) registers. A mode register may include a pRECS enable register, to enable a pRECS mode. When the prECS mode is enabled, pRECS information associated with each row may be collected which reflects a number of codewords stored along that row which were determined to include an error during error correct and scrub (ECS) operations. The memory may store the pRECS information in the memory array, for example, each row may store the pRECS information associated with that row. A pRECS address register may specify a location in the memory array to store the pRECS information.

Abstract: Apparatuses, systems, and methods for per row error correct and scrub (pRECS) information. There may be pRECS information associated with each row, and it may reflect a number of codewords stored along that row which were determined to include an error during error correct and scrub (ECS) operations. The memory may store the pRECS information in the memory array, for example, each row may store the pRECS information associated with that row.

Abstract: Apparatuses, systems, and methods for managing access to metadata stored at a memory. To manage access to metadata, a mode register is configured to receive a metadata enable setting and to provide a metadata enable signal based on the metadata enable setting. A metadata access control circuit configured to receive a column address identifying a particular column to be accessed within a memory array. The metadata access control circuit blocks access to a column corresponding to the column address when the column address matches one of a plurality of particular column addresses designated for storage of metadata and the metadata enable signal has a first value, and permits access to a column corresponding to the column address when the column address is different than every one of the a plurality of particular column addresses designated for storage of metadata or the metadata enable signal has a second value.

Abstract: Apparatuses, systems, and methods for managing storage and retrieval of metadata at a memory. A metadata column address generator, during an metadata access operation, is configured to decode a subset of less than all of the bits of the column address to determine a metadata column address and a metadata column plane address corresponding to a particular one of column planes of a memory array. A column decoder is configured to facilitate a double cycle access operation to write data to or retrieve data from the plurality of column planes based on the column address and to write metadata to or retrieve metadata from a particular column corresponding to the metadata column address of the particular one of the column planes corresponding to the column plane address.

Abstract: The systems and methods described herein relate to a bi-directional data path (DQ) symbol map generated based on error correction operations. A device may include sub-wordline drivers and bi-directional data paths (DQs) that couple between the sub-wordline drivers and input/output (I/O) interface circuitry based on assignments indicated by the DQ symbol map. The assignments may be generated based on error correction operations performed on data of the memory bank. In particular, the DQ symbol map may be generated to avoid some conditions that, if occurring, may render one or more data errors uncorrectable. These systems and methods may reduce a likelihood of a data error associated with a DQ being uncorrectable.

Abstract: Systems and methods for finite time counting period counting of infinite data streams is presented. In particular example systems and methods enable counting row accesses to a memory media device over predetermined time intervals in order to deterministically detect row hammer attacks on the memory media device. Example embodiments use two identical tables that are reset at times offset in relation to each other in a ping-pong manner in order to ensure that there exists no false negative detections. The counting techniques described in this disclosure can be used in various types of row hammer mitigation techniques and can be implemented in content addressable memory or another type of memory. The mitigation may be implemented on a per-bank basis, per-channel basis or per-memory media device basis. The memory media device may be a dynamic random access memory type device.

Abstract: Practical, energy-efficient, and area-efficient, mitigation of errors in a memory media device that are caused by row hammer attacks and the like is described. The detection of errors is deterministically performed while maintaining, in an SRAM, a number of row access counters that is smaller than the total number of rows protected in the memory media device. The mitigation may be implemented on a per-bank basis. The memory media device may be DRAM.

Abstract: A system and method detect a row hammer attack on the memory media device and generates a hardware interrupt based on the detection of the row hammer attack. This row hammer interrupt is communicated to an operating system of a host computing device, which in turn performs an interrupt service routine including generating a command to perform a row hammer mitigation operation. This command is provided to the memory controller which performs the row hammer mitigation operation in response to the command such as activating victim row(s) of the memory media device or throttling data traffic to the memory media device.

Abstract: An energy-efficient and area-efficient, mitigation of errors in a memory media device that are caused by row hammer attacks and the like is described. The detection of errors is deterministically performed while maintaining, in an SRAM, a number of row access counters that is smaller than the total number of rows protected in the memory media device. The reduction of the number of required counters is achieved by aliasing a plurality of rows that are being protected to each counter. The mitigation may be implemented on a per-bank basis, per-channel basis or per-memory media device basis. The memory media device may be DRAM.

Abstract: Systems and methods for area-efficient mitigation of errors that are caused by row hammer attacks and the like in a memory media device are described. The counters for counting row accesses are maintained in a content addressable memory (CAM) the provides fast access times. The detection of errors is deterministically performed while maintaining a number of row access counters that is smaller than the total number of rows protected in the memory media device. The circuitry for the detection and mitigation may be in the memory media device or in a memory controller to which the memory media device attaches. The memory media device may be dynamic random access memory (DRAM).