Abstract: A battery includes an electrode assembly including a first electrode, a second electrode and a separator between the first electrode and the second electrode, the first electrode, the second electrode and the separator being wound around a winding axis to define a core and an outer peripheral surface. The first electrode and the second electrode include a first uncoated region and a second uncoated region along a winding direction, respectively, and an active material layer coating is absent in the first uncoated region and the second uncoated region. The battery further includes a housing receiving the electrode assembly through an opening formed at a bottom, a first current collector coupled to the first uncoated region and disposed within the housing, a cap covering the opening, a spacer interposed between the cap and the electrode assembly to fix the electrode assembly and seal the housing, and a terminal electrically connected to the second uncoated region.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: A dual polarization antenna is disclosed in at least one embodiment of the present disclosure, including a base substrate, a power feeding unit supported on the base substrate, and a radiating plate supported on the power feeding unit, wherein the first feeding substrate includes a first insulating substrate supported on the base substrate, and a first feed line attached to the first insulating substrate and configured to supply a first reference phase signal to a first point on the radiating plate and to supply to a second point on the radiating plate, a first reverse phase signal having a reverse phase relative to the first reference phase signal, and wherein the second feeding substrate includes a second insulating substrate supported on the base substrate, and a second feed line attached to the first insulating substrate and configured to supply a second reference phase signal to a third point on the radiating plate and to supply to a fourth point on the radiating plate, a second reverse phase signal havi

Abstract: Provided is an organic light emitting device comprising a light emitting layer comprising an organic alloy of a compound of Chemical Formula 1 and a compound of Chemical Formula 2, the device having improved driving voltage, efficiency, and lifespan: where A is a benzene ring fused with the two adjacent rings, X1, X2 and X3 are each independently CH or N, provided that at least one of X1, X2 and X3 is N, Ar1-Ar5 are each independently a substituted or unsubstituted C6-60 aryl or a substituted or unsubstituted C2-60 heteroaryl containing at least one of N, O and S, and the other substituents are defined in the specification, provided that at least one of Ar4 and Ar5 is substituted with at least one deuterium, or at least one R2 is deuterium.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2, is provided.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: An organic light emitting device having improved efficiency, driving voltage, and lifespan is provided. The organic light emitting device comprises an anode, a cathode, and a light emitting between the anode and the cathode, and the light emitting layer comprises a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2.

Abstract: A compound represented by Chemical Formula 1 and an organic light emitting device including the same are provided. The compound is used as a material for an organic material layer of the organic light emitting device, and provides improved efficiency, low driving voltage, and increased lifespan of the organic light emitting device.

Abstract: One aspect of the present invention provides a compound in which a functional group capable of binding to a globulin Fc region or a physiologically active polypeptide is introduced at one end of a non-peptidic polymer and a functional group capable of a click reaction is introduced at the other end; a polypeptide conjugate in which a physiologically active polypeptide binds to one end of the compound; a physiologically active polypeptide conjugate in which a physiologically active polypeptide and an immunoglobulin Fc region bind to both ends thereof by using the compound as a linker; and methods for preparing the same compound, polypeptide conjugate, and physiologically active polypeptide conjugate.

Abstract: Provided is a heterocyclic compound of Chemical Formula 1: wherein: Y1 is O or S; Ar1 is a substituted C6-60 aryl; or a substituted or unsubstituted C1-60 heteroaryl containing one or more heteroatoms selected from among O, N, Si, and S; L is a single bond; a substituted or unsubstituted C6-60 arylene; or a substituted or unsubstituted C1-60 heteroarylene containing one or more heteroatoms selected from among O, N, Si, and S; R1 to R3 are each independently hydrogen; deuterium; a halogen; cyano; nitro; amino; a substituted or unsubstituted C1-60 alkyl; a substituted or unsubstituted C1-60 haloalkyl; or a substituted or unsubstituted: C1-60 alkoxy, C1-60 haloalkoxy, C3-60 cycloalkyl, C2-60 alkenyl, C6-60 aryl, C6-60 aryloxy, or C1-60 heteroaryl containing one or more heteroatoms selected from among N, O, and S, and n1 to n3 are each independently 1 to 5, and an organic light emitting device including the same.

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

Abstract: A semiconductor device having improved performance and reliability. The semiconductor device may include a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction. A plurality of gate structures may be on the lower pattern and spaced apart in the first direction, and a source/drain pattern, which may include a semiconductor liner film and a semiconductor filling film on the semiconductor liner film. A liner recess that is defined by an inner surface of the semiconductor liner film may include a plurality of width extension regions, and a width of each width extension region in the first direction may increase and then decreases, as a distance increases in the second direction from an upper surface of the lower pattern.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: A semiconductor device includes a substrate; an active pattern disposed on the substrate and extending in a first direction; a plurality of gate structures, wherein the plurality of gate structures is disposed on the active pattern and arranged in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and wherein the gate electrode extends in a second direction; a source/drain pattern disposed between adjacent gate structures of the plurality of gate structures; a source/drain contact connected to the source/drain pattern; and a contact silicide film disposed between the source/drain pattern and the source/drain contact, wherein the contact silicide film includes a bowl region that wraps a lower portion of the source/drain contact, and a protruding region that protrudes from the bowl region of the contact silicide film.

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

Abstract: A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.