Abstract: Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The photodiode including the graphene-silicon quantum dot hybrid structure of the present disclosure may be easily manufactured, may be manufactured over a large area, has a wide photodetection band from the ultraviolet light region to the near infrared region, and allows selective absorption energy control.

Abstract: The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emiting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.

Abstract: Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.

Abstract: Disclosed are a photoelectronic device using a hybrid structure of silica nanoparticles and graphene quantum dots and a method of manufacturing the same. The photoelectronic device according to the present disclosure has a hybrid structure including graphene quantum dots (GQDs) bonded to surfaces of silica nanoparticles (SNPs), thereby increasing energy transfer efficiency.

Abstract: Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The photodiode including the graphene-silicon quantum dot hybrid structure of the present disclosure may be easily manufactured, may be manufactured over a large area, has a wide photodetection band from the ultraviolet light region to the near infrared region, and allows selective absorption energy control.

Abstract: Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.

Abstract: Disclosed are a solar cell and a method of manufacturing the same. The solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the present disclosure includes a hybrid structure including a silicon quantum dot layer, in which a silicon oxide layer includes a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure.

Abstract: Disclosed are a photoelectronic device using a hybrid structure of silica nanoparticles and graphene quantum dots and a method of manufacturing the same. The photoelectronic device according to the present disclosure has a hybrid structure including graphene quantum dots (GODs) bonded to surfaces of silica nanoparticles (SNPs), thereby increasing energy transfer efficiency.

Abstract: A display device includes an upper substrate on a lower substrate, a driver integrated chip (IC) on the lower substrate, the driver IC and upper substrate contacting different parts of the lower substrate, a plurality of bumper units along edges of the driver IC, and a deformation preventing bumper unit between the bumper units, the deformation preventing bumper unit being configured to prevent the driver IC from being deformed.

Abstract: Provided is a graphene photodetector. The graphene photodetector comprises a first graphene, a graphene quantum dot (GQD) layer formed on the first graphene and including a plurality of GQDs and a second graphene provided on the GQD layer.

Abstract: A method of fabricating a display device using a bonding apparatus, the method including arranging a second substrate on a first substrate in which a plurality of pixels is formed, and bonding the first substrate and the second substrate to each other; providing the first substrate and the second substrate on a stage, and compressing a driver integrated circuit (IC) on the first substrate and simultaneously forming a reinforcing material on the first substrate; and compressing a flexible printed circuit board on the first substrate.

Abstract: Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350 nm to 1100 nm, and first and second electrodes are formed on the photodetection layer.

Abstract: The aim of the present invention is to provide a semiconductor device containing a graphene p-n vertical tunneling-junction diode by assessing the optical and electrical characteristics of a graphene p-n junction produced by varying the doping concentration. The semiconductor device includes first graphene of a first doping type, and second graphene of a second doping type different from the first doping type, which is arranged on the first graphene and is in contact therewith.

Abstract: The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic in device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emitting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.

Abstract: A display device includes a first substrate, a display section that is on the first substrate and that displays an image, first pad portions at a first directional edge of the first substrate and connected to the display section and to a driver integrated circuit (driver IC) that supplies a driving voltage, a second substrate on the first substrate with the display section interposed therebetween, and which exposes the first pad portions, a touch section that is on the second substrate and that corresponds to the display section, second pad portions on the second substrate and connected to edges of the touch section, a main flexible printed circuit board (main FPCB) connected to the first pad portions, and a touch flexible printed circuit board (touch FPCB) connected to the second pad portions and overlapping the main FPCB.

Abstract: Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350 nm to 1100 nm, and first and second electrodes are formed on the photodetection layer.

Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Abstract: The aim of the present invention is to provide a semiconductor device containing a graphene p-n vertical tunneling-junction diode by assessing the optical and electrical characteristics of a graphene p-n junction produced by varying the doping concentration. The semiconductor device includes first graphene of a first doping type, and second graphene of a second doping type different from the first doping type, which is arranged on the first graphene and is in contact therewith.

Abstract: A display device includes a first substrate, a display section that is on the first substrate and that displays an image, first pad portions at a first directional edge of the first substrate and connected to the display section and to a driver integrated circuit (driver IC) that supplies a driving voltage, a second substrate on the first substrate with the display section interposed therebetween, and which exposes the first pad portions, a touch section that is on the second substrate and that corresponds to the display section, second pad portions on the second substrate and connected to edges of the touch section, a main flexible printed circuit board (main FPCB) connected to the first pad portions, and a touch flexible printed circuit board (touch FPCB) connected to the second pad portions and overlapping the main FPCB.

Abstract: A display device includes an upper substrate on a lower substrate, a driver integrated chip (IC) on the lower substrate, the driver IC and upper substrate contacting different parts of the lower substrate, a plurality of bumper units along edges of the driver IC, and a deformation preventing bumper unit between the bumper units, the deformation preventing bumper unit being configured to prevent the driver IC from being deformed.