Abstract: A method of transmitting/receiving a packet using a hybrid automatic repeat request in the mobile communication system is disclosed. The packet data transmitting method includes transmitting at least one sub packet divided from plurality of encoded packets generated by repeating a bit stream that is made by encoding information desired to be transmitted with ? rate turbo encoder, and transmission start point information of the sub packet through the sub packet identifier field on the accompanying control channel.

Abstract: A method of transmitting/receiving a packet using a hybrid automatic repeat request in the mobile communication system is disclosed. The packet data transmitting method includes transmitting at least one sub packet divided from plurality of encoded packets generated by repeating a bit stream that is made by encoding information desired to be transmitted with 1/5 rate turbo encoder, and transmission start point information of the sub packet through the sub packet identifier field on the accompanying control channel.

Abstract: A method of transmitting/receiving a packet using a hybrid automatic repeat request in the mobile communication system is disclosed. The packet data transmitting method includes transmitting at least one sub packet divided from plurality of encoded packets generated by repeating a bit stream that is made by encoding information desired to be transmitted with ? rate turbo encoder, and transmission start point information of the sub packet through the sub packet identifier field on the accompanying control channel.

Abstract: A method of allocating radio resources in a multi-carrier system is disclosed, by which a signaling message can be efficiently transmitted according to necessity of a user equipment. In a user equipment of a mobile communication system transceiving data using a plurality of subcarriers, the present invention includes the steps of if the signaling message to be transmitted is generated in the user equipment, generating a preamble sequence according to a user equipment identifier to identify the user equipment, transmitting a preamble signal including the preamble sequence and the signaling message to a base station, and receiving an acknowledgement signal for the preamble signal generated according to the user equipment identifier.

Abstract: The present invention relates to Walsh Code Allocation (WCA) field in the Packet Data Control Channel. One of the embodiments of the WCA field is use of the WCA field as Last Walsh Code Index (LWCI) field in the message format of the PDCCH. The LWCI field indicates the corresponding last code index or the corresponding number of Walsh codes in a Walsh Code Index (WCI) Table/List/Set. In alternative embodiments, the WCA indicates a general set of Walsh codes or a specific set of Walsh codes in the WCI table. The WCA fields may or may not be used with one of power ranking and sequential decoding, but is preferable used. The WCA field has various advantages including but not limited to efficient use of system resources.

Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

Abstract: The present invention discloses a method for displaying the result of the image simulation predicting color tone, contrast and brightness of image shown as a viewing angle of observer. The invention includes steps that perform transformation of coordinates on the basis of a viewing angle of observer and projection of image generating new image in perspective. As a result, the result of the image simulation can be shown and analyzable with reality. Moreover, the invention affords convenience in the analysis of the result of image simulation.

Abstract: The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

Abstract: The present invention relates to a method for producing target protein in plant cell culture, more particularly to the method for producing target protein comprising the steps of i) constructing vector containing SWPA2 promoter and gene for the target protein, ii) introducing said vector into Agrobacterium, iii) transforming said Agrobacterium into plant cell, and iv) mass-producing target protein using said transformed plant cells. The method of the present invention can mass-produce target proteins such as human lactoferrin. Moreover, the transformed plant can also be used to make health foods when medicinal plant is used as a host cell.

Abstract: The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.

Abstract: The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.

Abstract: A self-locking structure of a split roller bearing cage includes recesses, locker plates and locking projections. The recesses are defined in outer circumferential surfaces of opposite joint ends of two semicircular split roller bearing cage half-parts along horizontally inscribed tangential lines, that meet an outer circumference of the annular split roller bearing cage and intersect perpendicular with a split center axis of the annular split roller bearing cage. Recesses have widths and depths suitable to receive locker plates. The locker plates are horizontally attached to bottoms of the recesses defined in opposite joint ends of one of the cage half-parts. Locking projections are formed at bottoms of other recesses defined in opposite joint ends of the other cage half-parts to be coupled with respective locker plates. The two cage half-parts are aligned and engaged at their joint ends, forming a full circle. The locker plates can be automatically coupled to the locking projections.

Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

Abstract: An electric oven includes a partition member to partition a cooking chamber into two cooking regions. The partition member for use in the electric oven includes an insulating board interposed between upper and lower plates of the partition member, and a shock-absorbing unit to prevent damage to the insulating board. Using the electric oven configured as stated above, it is possible to intercept heat transfer between the partitioned respective cooking regions, thereby preventing heat loss between the respective cooking regions and damage to the interior of the partition member.

Abstract: The present invention relates to a mobile communication system, and more particularly, to a method of adjusting a signal power in a variable data rate mode. Accordingly, the present invention includes steps of allocating a reference pilot signal level to each of a plurality of data rates supported by the system and adjusting the reference pilot signal level for a changed data rate based on an external control information and adjusting a power control threshold for secondly adjusting the reference pilot signal level corresponding to the reference pilot signal level.

Abstract: Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.

Abstract: The present invention relates to a method for high throughput screening of plant growth regulator, more particularly to the method comprising; 1) culturing phytomixotrophic cells and candidates of plant growth regulator which were added in a microwell plate, 2) treating 2,3,5-triphenyltetrazolium chloride thereto, 3) reacting thereof by adding ethanol after removing solutions from microwells, 4) transferring the reacting solution into the new microwell plate, and 5) measuring optical density with a high throughput screening reader. Since the method of the present invention can rapidly and conveniently screen many samples and can also evaluate in vivo activities of plant growth regulators, it can effectively be used as a screening method for plant growth inhibitors and activators.

Abstract: Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.

Abstract: The present invention provides an apparatus and method for controlling transmission powers of R-CQICH (reverse-channel quality indicator channel) and R-ACKCH (reverse-acknowledgment channel) independently. The present invention includes the steps of receiving a first parameter corresponding to the R-CQICH and a second parameter corresponding to the R-ACKCH from a base station via an overhead message and independently determining transmission powers of the R-CQICH and the R-ACKCH using the first and second parameters.

Abstract: Disclosed in a mobile communication system, and more particularly a method of re-transmitting data through a reverse link in a packet data system using ARQ (automatic repeat request) and a packet transmitting method and apparatus by which transmission efficiency is enhanced. The present invention discloses a method for re-transmitting data through a reverse link in Packet Data communication system using automatic repeat request (ARQ) adjusting data retransmission energy to be reduced at a predetermined ratio of one receiving energy for an initial data transmission to other receiving energy for a data re-transmission. The present invention also discloses a hybrid automatic repeat request system for packet transmission in which separate traffic-to-pilot power ratios are assigned to sub-packets when transmitting the sub-packets formed from one packet.