Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Abstract: In some embodiments, an integrated tool for opening an etch stop layer and performing metallization comprises a first chamber with a remote plasma source, a direct plasma source, and a thermal source configured to open the etch stop layer on a substrate, a second chamber of the integrated tool with dry etch processing configured to pre-clean surfaces exposed by opening the etch stop layer, a third chamber of the integrated tool configured to deposit a barrier layer on the substrate, a fourth chamber of the integrated tool configured to deposit a liner layer on the substrate, and at least one fifth chamber of the integrated tool configured to deposit metallization material on the substrate. The integrated tool may also include a vacuum transfer chamber.

Abstract: Methods open etch stop layers in an integrated environment along with metallization processes. In some embodiments, a method for opening an etch stop layer (ESL) prior to metallization may include etching the ESL with an anisotropic process using direct plasma to form helium ions that are configured to roughen the ESL for a first duration of approximately 10 seconds to approximately 30 seconds, forming aluminum fluoride on the ESL using remote plasma and nitrogen trifluoride gas for a second duration of approximately 10 seconds to approximately 30 seconds, and exposing the ESL to a gas mixture of boron trichloride, trimethylaluminum, and/or dimethylaluminum chloride at a temperature of approximately 100 degrees Celsius to approximately 350 degrees Celsius to remove aluminum fluoride from the ESL and a portion of a material of the ESL for a third duration of approximately 30 seconds to approximately 60 seconds.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate comprises a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber, b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition, c) depositing a precursor while supplying water to form one of an aluminum oxide (AlO) layer on the dielectric layer or a low-k dielectric layer on the dielectric layer, d) supplying at least one of hydrogen (H2) or ammonia (NH3) to remove the self-assembled monolayer (SAM), and e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the one of the aluminum oxide (AlO) layer on the dielectric layer or the low-k dielectric layer on the dielectric layer.

Abstract: Methods for forming interconnects on a substrate with low resistivity and high dopant interfaces. In some embodiments, a method includes depositing a first copper layer with a dopant with a first dopant content of 0.5 percent to 10 percent in the interconnect by sputtering a first copper-based target at a first temperature of zero degrees Celsius to 200 degrees Celsius, annealing the substrate at a second temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the first copper layer, depositing a second copper layer with the dopant with a second dopant content of zero percent to 0.5 percent by sputtering a second copper-based target at the first temperature of zero degrees Celsius to 200 degrees Celsius, and annealing the substrate at a third temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the second copper layer.

Abstract: Interconnect structures on a substrate have low resistivity and high dopant interfaces. In some embodiments, the structures may have an opening with a sidewall from an upper surface to an underlying metallic layer of copper, a barrier layer of tantalum nitride formed on the sidewall of the opening, a liner layer of cobalt or ruthenium formed on the barrier layer and on the underlying metallic layer, a first copper layer with a dopant with a first dopant content formed on the liner layer and filling a lower portion of the opening to form a via-the first dopant content is approximately 0.5 percent to approximately 10 percent, and a second copper layer with the dopant with a second dopant content formed on the first copper layer and filling the at least one opening—the second dopant content is more than zero to approximately 0.5 percent of the dopant and is less than the first dopant content.

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

Abstract: Methods and apparatus for forming an interconnect structure, including: depositing a plurality of spacers atop a low-k dielectric layer including a plurality of recessed vias, wherein one or more of the plurality of spacers is deposited atop the top surface of the low-k dielectric layer and within one or more of the plurality of recessed vias to form a one or more partially filled recessed vias; depositing a conformal metal layer atop the low-k dielectric layer, plurality of spacers, and within the one or more partially filled recessed vias to form a plurality of filled vias; etching the conformal metal layer to remove portions thereof to form a second plurality of partially filled recessed vias; and filling between the plurality spacers and within the second plurality of partially filled recessed vias with a dielectric material to form a second plurality of filled vias.

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

Abstract: Processing methods may be performed to produce three-dimensional interconnects on a substrate. The methods may include forming a first metal interconnect layer over a semiconductor substrate. The methods may include forming a first dielectric layer over the first metal interconnect layer. The methods may include forming a second metal interconnect layer over the first dielectric layer. The methods may include forming a patterning mask overlying the second metal interconnect layer. The methods may also include simultaneously etching each of the first metal interconnect layer, the first dielectric layer, and the second metal interconnect layer to expose the substrate to produce a multilayer interconnect structure in a first lateral direction.

Abstract: Methods and apparatus for forming an interconnect structure, including: depositing a plurality of spacers atop a low-k dielectric layer including a plurality of recessed vias, wherein one or more of the plurality of spacers is deposited atop the top surface of the low-k dielectric layer and within one or more of the plurality of recessed vias to form a one or more partially filled recessed vias; depositing a conformal metal layer atop the low-k dielectric layer, plurality of spacers, and within the one or more partially filled recessed vias to form a plurality of filled vias; etching the conformal metal layer to remove portions thereof to form a second plurality of partially filled recessed vias; and filling between the plurality spacers and within the second plurality of partially filled recessed vias with a dielectric material to form a second plurality of filled vias.

Abstract: Processing methods may be performed to produce three-dimensional interconnects on a substrate. The methods may include forming a first metal interconnect layer over a semiconductor substrate. The methods may include forming a first dielectric layer over the first metal interconnect layer. The methods may include forming a second metal interconnect layer over the first dielectric layer. The methods may include forming a patterning mask overlying the second metal interconnect layer. The methods may also include simultaneously etching each of the first metal interconnect layer, the first dielectric layer, and the second metal interconnect layer to expose the substrate to produce a multilayer interconnect structure in a first lateral direction.

Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

Abstract: Embodiments of methods for forming interconnect patterns on a substrate are provided herein. In some embodiments, a method for forming an interconnect pattern atop a substrate includes depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate; removing a portion of the porous dielectric layer; removing the plurality of spacers to form features in the porous dielectric layer; and etching the cap layer to extend the features through the cap layer.

Abstract: A three-dimensional structure having a mixture of inverted pyramidal cavities and substantially flat areas defines the frontside and backside of a substrate. The substantially flat areas have ridges forming base openings of the inverted pyramidal cavities and planar linear regions across the substrate. Pyramidal sidewalls define the pyramidal cavities from the ridges to pyramidal apices. Metallization contacts emitter regions on the frontside of the substantially flat areas.

Abstract: A structure and method operable to create a reusable template for detachable thin semiconductor substrates is provided. The reusable template has a three-dimensional (3-D) surface topography comprising a plurality of raised areas comprising a rounded top and separated by a plurality of depressed areas.

Abstract: Embodiments of methods for forming interconnect patterns on a substrate are provided herein. In some embodiments, a method for forming an interconnect pattern atop a substrate includes depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate; removing a portion of the porous dielectric layer; removing the plurality of spacers to form features in the porous dielectric layer; and etching the cap layer to extend the features through the cap layer.

Abstract: A three-dimensional thin film solar cell (3-D TFSC) substrate having enhanced mechanical strength, light trapping, and metal modulation coverage properties. The substrate includes a plurality of unit cells, which may or may not be different. Unit cells are defined as a small self-contained geometrical pattern which may be repeated. Each unit cell structure includes a wall enclosing a trench. Further, the unit cell includes an aperture having an aperture diameter. A pre-determined variation in wall thickness, wall height, and aperture diameter among unit cells across the substrate produces specific advantages.