Abstract: A light-emitting diode (LED) package includes: an LED having a polygonal shape in a plan view; a light-transmissive layer directing light from the LED in an upward direction; a wavelength conversion layer changing a wavelength of the light emitted through the light-transmissive layer; and a coating layer covering the light-transmissive layer and reflecting the light emitted through the light-transmissive layer in the upward direction. In a plan view of the light-transmissive layer, a length from a first point corresponding to a vertex of the LED to a second point corresponding to an end of an extension of a diagonal of the LED is greater than or equal to a length from the first point to a third point corresponding to an end of an extension of a side of the LED.

Abstract: Provided is an apparatus including a new and renewable energy FinTech platform module, a new and renewable energy power generator, a new and renewable energy generated power-to-cash change control unit, a cloud computing module, and a smart economic feasibility analysis simulation module and method for encouraging participation of residents in building a new and renewable energy farm through notification of economic feasibility analysis with a new and renewable energy FinTech platform module that can guide the residents in an area where a new and renewable energy power generator is installed to jointly purchase a new and renewable energy power generator that is installed and operated in advance, set unique IDs for the residents having purchased the new and renewable energy power generator, and share the amount of daily produced electricity generated from the new and renewable energy power generator, cash exchange data, and 1:1 revenue dividends.

Abstract: A light-emitting diode (LED) package includes: an LED having a polygonal shape in a plan view; a light-transmissive layer directing light from the LED in an upward direction; a wavelength conversion layer changing a wavelength of the light emitted through the light-transmissive layer; and a coating layer covering the light-transmissive layer and reflecting the light emitted through the light-transmissive layer in the upward direction. In a plan view of the light-transmissive layer, a length from a first point corresponding to a vertex of the LED to a second point corresponding to an end of an extension of a diagonal of the LED is greater than or equal to a length from the first point to a third point corresponding to an end of an extension of a side of the LED.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: Provided is an apparatus including a new and renewable energy FinTech platform module, a new and renewable energy power generator, a new and renewable energy generated power-to-cash change control unit, a cloud computing module, and a smart economic feasibility analysis simulation module and method for encouraging participation of residents in building a new and renewable energy farm through notification of economic feasibility analysis with a new and renewable energy FinTech platform module that can guide the residents in an area where a new and renewable energy power generator is installed to jointly purchase a new and renewable energy power generator that is installed and operated in advance, set unique IDs for the residents having purchased the new and renewable energy power generator, and share the amount of daily produced electricity generated from the new and renewable energy power generator, cash exchange data, and 1:1 revenue dividends.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed.

Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

Abstract: An apparatus and a method for analyzing economics of a power demand management business project using a smart power demand resources modeling data simulation module, the apparatus including a cloud computing module for grouping N smart power demand resources modeling data simulation modules according to their positions and IDs through a web application server and connecting the modules to a network, a web application server (WAS) positioned between a cloud computing module and a smart power demand resources modeling data simulation module, and a smart power demand resources modeling data simulation module.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Abstract: A method of manufacturing a semiconductor light-emitting device is provided. The method includes operations of forming a first conductive type semiconductor layer on a substrate; forming a V-pit in the first conductive type semiconductor layer; forming a defect decreasing structure in and over the V-pit; and forming a residual first conductive type semiconductor layer on the defect decreasing structure. By using the method, an excellent-quality semiconductor light-emitting device having a reduced crystal defect may be inexpensively manufactured.

Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.

Abstract: An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.