Abstract: Embodiments of the invention provide a method for debonding chamber component used in a semiconductor processing chamber. In one embodiment, a method for debonding chamber components used in a semiconductor processing chamber includes providing a first chamber component and a second chamber component bonded by an adhesive material disposed at an interface defined between the first and the second chamber components, soaking the bonded first and the second chamber components into an organic solution for between about 8 hours to about 240 hours, and removing the bonded first and the second chamber from the organic solution; and mechanically separating the soaked first and the second chamber components.

Abstract: Embodiments of the present invention generally provide chamber components with enhanced thermal properties and methods of enhancing thermal properties of chamber components including bonding materials. One embodiment of the present invention provides a method for fabricating a composite structure. The method includes applying a bonding material to a first component, and converting the bonding material applied to the first component to an enhanced bonding layer by heating the bonding material to outgas volatile species from the bonding material. The outgassed volatile species accumulates to at least 0.05% in mass of the bonding material. The method further includes contacting a second component and the enhanced bonding layer to join the first and second components.