Abstract: Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

Abstract: Embodiments of substrate supports for use in a process chamber are provided herein. In some embodiments a substrate support for use in a process chamber includes a pedestal having an upper surface for supporting a substrate and an opposite lower surface, a first heater disposed within the pedestal between the upper surface and the lower surface, and thermal baffles having a plurality of voids that are fluidly isolated from each other disposed between the first heater and the lower surface to reduce heat transfer from the first heater to the lower surface of the pedestal.

Abstract: Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

Abstract: Embodiments of substrate supports for use in a process chamber are provided herein. In some embodiments a substrate support for use in a process chamber includes a pedestal having an upper surface for supporting a substrate and an opposite lower surface, a first heater disposed within the pedestal between the upper surface and the lower surface, and thermal baffles having a plurality of voids that are fluidly isolated from each other disposed between the first heater and the lower surface to reduce heat transfer from the first heater to the lower surface of the pedestal.

Abstract: Embodiments of a substrate carrier are provided herein. In some embodiments, a substrate carrier includes a base plate, wherein the base plate is a thin, solid plate with no through holes or embedded components; and a plurality of raised portions extending from the base plate, wherein the plurality of raised portions include first raised portions and second raised portions, the first raised portions disposed radially inward from the second raised portions, wherein the base plate and the plurality of raised portions define pockets configured to retain a plurality of substrates, and wherein an upper surface of the second raised portions have a greater surface area than an upper surface of the first raised portions.