Abstract: According to some embodiments, a communication module 120 may be configured to transmit data packet traffic and a management module 110 may be configured to shape the data packet traffic transmitted by the communication module 120. The management module 110 may shape the data packet traffic by buffering data packets routed at different times to the communication module 120 based on at least one power management factor.

Abstract: The following description provides a method for preparing electrodes for solar cells, substrates for the solar cell prepared using the same, and the solar cells. The method forms conductive paste on substrates by a printing method and a wet metal plating method, and forms a non-porous cell structure by directly plating a crystallized metal layer on the substrates via etching without using excessive non-crystallized conductive paste or plating the porous conductive paste with metal.

Abstract: An image sensor and fabricating method thereof for preventing cross-talk between neighboring pixels by providing at least three light-shield walls combining to extend vertically above a lateral periphery of a photodiode for deflecting light from a microlens array towards the photodiode.

Abstract: A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.

Abstract: An optical sensor has at least one pixel that generates an output voltage that changes at a rate dependent on the light intensity incident on the pixel. The time for the pixel output voltage to change from a first predefined level to a second predefined level is measured, so as to produce an output indicative of the incident light intensity.

Abstract: Apparatus for joining a first conduit to a second conduit comprising a first coupler for attachment to an end of the first conduit, a second coupler for attachment to an end of the second conduit and for engagement to the first coupler, and a snap-fit fastener for fastening the first coupler to the second coupler. The snap-fit fastener is arranged in at least two portions to fit around the periphery of the first and second couplers when the first and second couplers are engaged. The apparatus enables relative movement between the first coupler and the second coupler.

Abstract: The present invention is an alternative lighting technology to form light emitting diode (LED) light tube. The tubular or circular LED tube is formed by transparent plastic and a metal heat sink that includes LEDs soldered onto a metal core printed circuit board with a special arrangement to achieve greater brightness than an equal distance arrangement. All LEDs are directly inserted into the metal core printed circuit board with a unique insulation coating to allow the LED anode and cathode to be inserted into the metal core printed circuit board and soldered on the opposite side of the metal core printed circuit board. It can connect one or more control units to control intensity.

Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.

Abstract: Provided is an image sensor. In the image sensor, a transistor region is on a substrate, and a photo diode region is at one side of the transistor region. A dielectric layer is formed on the transistor region and the photo diode region. A metal line is formed on the dielectric layer in the transistor region. A color filter is formed on the dielectric layer in the photo diode region.

Abstract: An image sensor and fabricating method thereof for preventing cross-talk between neighboring pixels by providing at least three light-shield walls combining to extend vertically above a lateral periphery of a photodiode for deflecting light from a microlens array towards the photodiode.

Abstract: Disclosed are an image sensor and a method for fabricating the same. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a photoresist pattern as a mask; forming a metal layer on the photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the photoresist pattern, and at least a portion of the sacrificial oxide layer; and forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film.

Abstract: An optical sensor has at least one pixel that generates an output voltage that changes at a rate dependent on the light intensity incident on the pixel. The time for the pixel output voltage to change from a first predefined level to a second predefined level is measured, so as to produce an output indicative of the incident light intensity.

Abstract: An intercooler configured for attachment to an automobile is disclosed. One embodiment of the invention includes an intercooler body having an inlet manifold on one end and an outlet manifold on the other end, and a decorative top plate on the top of the intercooler attached to the manifolds. The decorative top plate has two holes in it which are both keyed to resist rotation of an insert, a hollow bolt having a stepped formation under the bolt head such that the stepped formation is able to key in the hole cut in the plate, the bolt is inserted through the top of the plate and secured by a nut secured underneath it so that the head of the bolt lies flush against the plate and the stepped formation keys against the hole to prevent rotation. In addition, the bolt is hollow having a threaded passage passing through it to receive another bolt to secure the intercooler to a bracket in the automobile.

Abstract: A low-dropout regulator with a single-transistor-control providing improved transient response and stability is disclosed. The single-transistor-control provides a dynamic resistance at the output of the regulator for minimizing undershoot and overshoot, and hence improves transient response. Since the single-control transistor reduces the output resistance of the regulator, the output pole is pushed to a sufficiently high frequency without affecting stability. Therefore, the limited choice of combinations of the output capacitance and its equivalent-series-resistance is substantially relaxed.

Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.

Abstract: A method for an allocation of stacked registers for Intel's Itanium® processor includes a three step process. Step I determines an intra-procedural stacked register usage by a program having a plurality of procedures. In step II, the disclosed method performs an inter-procedural analysis to assign quota of stacked register usage to every procedure. In step III, each procedure is allocated stacked register usage based on the quota assignments of step II.

Abstract: A method and computer program product, within an optimizing compiler, for precise feedback data generation and updating. The method and computer program uses instrumentation and annotation of frequency values to allow feedback data to stay current during the multiple optimizations that the program code undergoes during compilation. Global propagation of known precise feedback values are used to replace approximate and unavailable values, and global verification of feedback data after optimization to detect discrepancies is employed. The method and computer program also provides improved instrumentation to anticipate cloning when code is cloned during ceratin compiler optimizations and handles inlined procedures. The result is compiled executables with improved SPECint benchmarks.

Abstract: A low-dropout regulator with a single-transistor-control providing improved transient response and stability is disclosed. The single-transistor-control provides a dynamic resistance at the output of the regulator for minimizing undershoot and overshoot, and hence improves transient response. Since the single-control transistor reduces the output resistance of the regulator, the output pole is pushed to a sufficiently high frequency without affecting stability. Therefore, the limited choice of combinations of the output capacitance and its equivalent-series-resistance is substantially relaxed.