Abstract: A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

Abstract: A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and second regions, a fin protruding on the substrate and extending in the first direction, first and second gate structures respectively formed on the fin in the first and second regions, first and second spacers formed with spacing apart from each other on the fin in the third region. The first and second spacers are sloped in a direction away from each other, and the first and second spacers and an upper surface of the fin define a plurality of acute angles, the first and second spacers defining a recess, the fin and the first and second spacers defining sidewalls of the recess, and a device isolating film substantially filling the recess.

Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.

Abstract: A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

Abstract: A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and second regions, a fin protruding on the substrate and extending in the first direction, first and second gate structures respectively formed on the fin in the first and second regions, first and second spacers formed with spacing apart from each other on the fin in the third region. The first and second spacers are sloped in a direction away from each other, and the first and second spacers and an upper surface of the fin define a plurality of acute angles, the first and second spacers defining a recess, the fin and the first and second spacers defining sidewalls of the recess, and a device isolating film substantially filling the recess.

Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.

Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.

Abstract: A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively, forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region, forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including a first colloid, and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.

Abstract: A method of manufacturing a semiconductor device includes forming dummy gate structures including a dummy gate insulating layer and dummy gate electrodes, on a first region of a semiconductor substrate, the first region including a patterning region, forming spacers on two side walls of each of the dummy gate structures, forming an interlayer insulating layer on the semiconductor substrate and the dummy gate structures, forming a protective insulating layer on a second region of the semiconductor substrate, the second region including a non-patterning region, forming a liner layer on the protective insulating layer, planarizing the interlayer insulating layer by using the liner layer as an etching mask to expose top surfaces of the dummy gate structures, forming openings by removing the dummy gate structures to expose the semiconductor substrate between the spacers, and forming gate structures including a gate insulating layer and metal gate electrodes, in the openings.

Abstract: A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

Abstract: A semiconductor device may include a first gate electrode being formed on a substrate and having a first ratio of a width of an upper surface to a width of a lower surface, a second gate electrode being formed on the substrate and having a second ratio of the width of the upper surface to the width of the lower surface, wherein the second ratio is less than the first ratio, a first gate spacer being formed on a sidewall of the first gate electrode, a second gate spacer being formed on a sidewall of the second gate electrode and an interlayer insulating film covering the first gate spacer and the second gate spacer.

Abstract: There is provided a semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer using a hybrid interlayer insulating film. The semiconductor device includes a gate electrode on a substrate, a gate spacer being on a sidewall of the gate electrode and including an upper portion and a lower portion, a lower interlayer insulating film being on the substrate and overlapping with the lower portion of the gate spacer, and an upper interlayer insulating film being on the lower interlayer insulating film and overlapping with the upper portion of the gate spacer, wherein the lower interlayer insulating film is not interposed between the upper interlayer insulating film and the upper portion of the gate spacer.

Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.

Abstract: Disclosed are an image forming apparatus, a host apparatus, and a print method thereof. A method includes receiving a one touch print command from a print button provided in the image forming apparatus to print an image of at least one monitor among a plurality of monitors of a host apparatus connected to the image forming apparatus. With this configuration, high quality output products may be provided without any image distortion due to a difference in resolution upon receiving a one touch print command in the multi monitor environment.

Abstract: Disclosed are an image forming apparatus, a host apparatus, and a print method thereof. A method includes receiving a one touch print command from a print button provided in the image forming apparatus to print an image of at least one monitor among a plurality of monitors of a host apparatus connected to the image forming apparatus. With this configuration, high quality output products may be provided without any image distortion due to a difference in resolution upon receiving a one touch print command in the multi monitor environment.

Abstract: Provided are an image signal rejection method capable of avoiding demodulation of an image signal along with a real signal in a radio frequency (RF) signal and a low IF receiver of rejecting an image signal by using the method. The low IF receiver of rejecting an image signal includes a low noise amplifier, a quadrature I/Q mixer, a signal complex filter, and a phase and gain control block. The low noise amplifier amplifies a radio frequency (RF) signal. The quadrature I/Q mixer generates an I signal and a Q signal by down-converting the amplified RF signal into an IF signal. The phase and gain control block generates an I? signal and a Q? signal which are obtained by changing phases and amplitudes of the I signal and the Q signal by using a real signal. The signal complex filter minimizing the image signal in the IF signal and passing the real signal by performing filtering on the I? signal and the Q? signal.

Abstract: A laser measuring device maintains high responsivity irrespective of changes in surrounding environment, provides more correct measurement and long distance measurement due to reduced noise, and ensures the safety and reliability of a product. A first light emitter emits first wavelength light having a first wavelength. A second light emitter emits second wavelength light having a second wavelength, the second light emitter being arranged perpendicular to the first light emitter. An optical mirror allows one of the first wavelength light and the second wavelength light to pass but reflecting the other one. A first band pass filter for allows the first wavelength light to pass. A second band pass filter allows the second wavelength light to pass. A light receiver receives incident light, which arrives through one of the first and second band pass filters. A controller activates at least one of the first and second light emitters.

Abstract: Provided is a poly-phase filter capable of removing an image frequency of a terrestrial digital multimedia broadcasting (T-DMB) receiver in a low intermediate frequency (IF) structure applied to a mobile communication terminal and a receiver having the poly-phase filter. The poly-phase filter includes: a calibration control block for generating first and second filter characteristic control signals which determine electrical characteristics of the filter in response to a control signal including instructions for changing the characteristics of the poly-phase filter and holding the changed values; and a poly-phase filter block for performing filtering on a plurality of input signals having different phases from each other in response to the first and second filter characteristic control signals. Accordingly, the poly-phase filter has advantages of having constant electrical characteristics regardless of changes in a manufacturing process and temperature and a high-performance image rejection function.

Abstract: A laser measuring device maintains high responsivity irrespective of changes in surrounding environment, provides more correct measurement and long distance measurement due to reduced noise, and ensures the safety and reliability of a product. A first light emitter emits first wavelength light having a first wavelength. A second light emitter emits second wavelength light having a second wavelength, the second light emitter being arranged perpendicular to the first light emitter. An optical mirror allows one of the first wavelength light and the second wavelength light to pass but reflecting the other one. A first band pass filter for allows the first wavelength light to pass. A second band pass filter allows the second wavelength light to pass. A light receiver receives incident light, which arrives through one of the first and second band pass filters. A controller activates at least one of the first and second light emitters.

Abstract: Provided are an image signal rejection method capable of avoiding demodulation of an image signal along with a real signal in a radio frequency (RF) signal and a low IF receiver of rejecting an image signal by using the method. The low IF receiver of rejecting an image signal includes a low noise amplifier, a quadrature I/Q mixer, a signal complex filter, and a phase and gain control block. The low noise amplifier amplifies a radio frequency (RF) signal. The quadrature I/Q mixer generates an I signal and a Q signal by down-converting the amplified RF signal into an IF signal. The phase and gain control block generates an I? signal and a Q? signal which are obtained by changing phases and amplitudes of the I signal and the Q signal by using a real signal. The signal complex filter minimizing the image signal in the IF signal and passing the real signal by performing filtering on the I? signal and the Q? signal.