Abstract: A memory system includes a memory and a memory controller operating to control the memory. The memory includes a random accessible memory including a memory cell array operable in a random access mode, a NAND flash memory, and a selection circuit making the memory controller operate either one of the random accessible memory or the NAND flash memory.

Abstract: A method for programming a flash memory device with a plurality of memory cells. A selected memory cell is programmed under a condition where a bulk area is biased with a high voltage. A program pass/fail of the memory cell is verified with the high voltage applied to the bulk area.

Abstract: An antenna for a built-in multimedia receiver in a vehicle to use a multimedia service such as HD radio, DMB, and the like. The antenna may function as a message board that may externally display a predetermined message, such as driver's phone number, as well as receive the multimedia signal. The antenna not only receives a multimedia service signal but also transmits the multimedia service signal to a basic multimedia reproduction device included in the vehicle, thus enabling efficient addition of another multimedia receiver to the vehicle with the minimum wiring.

Abstract: A memory system includes a main memory, a sub-memory, a controller, first and second data readers and a comparator. The main memory stores data and the sub-memory stores data extracted from the data stored in the main memory for detection of an attack. The controller controls operations of the memory system through interfacing with a host. The first data reader is configured to read first data from the main memory based on address information from the controller. The second data reader is configured to store information relating to second data stored in the sub-memory and to read the second data from the sub-memory based on address information from the controller which is the same as the address information received by the first data reader. The comparator compares the first data read by the first data reader with the second data read by the second data reader to detect the attack.

Abstract: A semiconductor integrated circuit including a detector and a secure checker. The detector generates a detection signal upon sensing an abnormal state in an operating environment of the semiconductor integrated circuit. The secure checker generates a check signal to find an operating condition of the detector and receives the detection signal. The detector activates the detection signal in response to the check signal.

Abstract: An integrated circuit memory system includes an integrated circuit device having a random access memory array, a non-volatile memory array (e.g., flash memory array) and a data transfer circuit therein. The memory arrays and data transfer circuit may be included in a common integrated circuit chip. The random access memory (RAM) array includes a plurality of columns of RAM cells and a first plurality of bit lines, which are electrically connected to the plurality of columns of RAM cells. The non-volatile memory array includes a plurality of columns of non-volatile memory cells and a second plurality of bit lines, which are electrically connected to a plurality of columns of non-volatile memory cells. The data transfer circuit is electrically connected to the first and second pluralities of bit lines. The data transfer circuit is configured to support direct bidirectional communication between the first and second pluralities of bit lines.

Abstract: A method of operating a non-volatile memory device includes maintaining a write voltage at a predetermined voltage level for programming and/or erasing a memory cell of the non-volatile memory device during a time between execution of consecutive write operations. For example, the write voltage may be activated at the predetermined voltage level responsive to an initial write command, and discharge of the write voltage may be prevented responsive to a signal indicating consecutive write commands. Related devices are also discussed.

Abstract: An integrated circuit for generating a clock signal includes a voltage conversion unit, a maximum power determination unit, a clock control unit and a clock generator. The voltage conversion unit converts an external power supply voltage into an internal power supply voltage and detects a variance in current consumption of a functional block to generate a detected voltage wherein the functional block consumes a predetermined current using the internal power supply voltage. The maximum power determination unit determines a maximum current consumption of the functional block and converts the maximum current consumption to a corresponding maximum allowed voltage. The clock control unit generates at least one frequency control signal based on a comparison between the detected voltage and the maximum allowed voltage. The clock generator generates the clock signal whose frequency is adjusted according to the frequency control signal.

Abstract: A memory system includes a memory and a memory controller operating to control the memory. The memory includes a random accessible memory including a memory cell array operable in a random access mode, a NAND flash memory, and a selection circuit making the memory controller operate either one of the random accessible memory or the NAND flash memory.

Abstract: A repairable semiconductor memory device including a memory cell array having a first block to store first system data and a second block to store second system data identical to the first system data. A controller transmits the first system data to a memory unit in response to a reset signal output from a host and the second system data to the memory unit based on a fail detection signal generated by an ECC detection block. The ECC detection block determines whether the first system data is defective. When a defect is generated in the first system data during resetting of the semiconductor memory device, the first system data is repaired by supplying the second system data.

Abstract: Example embodiments provide a method and apparatus of correcting error data due to charge loss within a non-volatile memory device including a plurality of memory cells. The method of correcting error data within the non-volatile memory devices may include detecting error data in a second data group by comparing a first data group read from memory cells in response to a first voltage with the second data group read from memory cells in response to a second voltage. The second voltage is higher than the first voltage. Error data in the first data group is detected by error-correcting code (ECC). Re-writing data in the memory cells is performed by correcting error data in the first data group and error data in the second data group. A central processing unit (CPU) may detect error in the second data group. The second data group may be read through a page buffer and compared with the first data group stored in a SRAM. The detected error may be updated to the page buffer.

Abstract: An integrated circuit memory system includes an integrated circuit device having a random access memory array, a non-volatile memory array (e.g., flash memory array) and a data transfer circuit therein. The memory arrays and data transfer circuit may be included in a common integrated circuit chip. The random access memory (RAM) array includes a plurality of columns of RAM cells and a first plurality of bit lines, which are electrically connected to the plurality of columns of RAM cells. The non-volatile memory array includes a plurality of columns of non-volatile memory cells and a second plurality of bit lines, which are electrically connected to a plurality of columns of non-volatile memory cells. The data transfer circuit is electrically connected to the first and second pluralities of bit lines. The data transfer circuit is configured to support direct bidirectional communication between the first and second pluralities of bit lines.

Abstract: A memory card includes: a first memory chip responding to all commands input externally; and a second memory chip responding to commands, among the commands input externally, relevant to reading, programming, and erasing operations with data. Card identification information stored in the first memory chip includes capacity information corresponding to a sum of sizes of the first and second memory chips. The plurality of memory chips of the memory card are useful in designing the memory card with storage capacity in various forms.

Abstract: A method for programming a flash memory device with a plurality of memory cells. A selected memory cell is programmed under a condition where a bulk area is biased with a high voltage. A program pass/fail of the memory cell is verified with the high voltage applied to the bulk area.

Abstract: A buffer memory includes a memory cell array, a flag cell array, and a error correction block. The memory cell array has a plurality of word lines. Each of the plurality of word lines are electrically connected to a plurality of memory cells storing data. The flag cell array has a plurality of flag cells. Each of the plurality of flag cells is connected to each of the word lines and stores information that indicates whether error correction of the data has been performed. The error correction block performs error correction on the data output from the memory cell array in response to a command received through a host interface and flag data output from the flag cell array.

Abstract: An apparatus and method for controlling an embedded NAND flash memory. The apparatus includes a code memory storing code information for controlling an access to a NAND flash memory. A register stores code information corresponding to a command to be executed by the NAND flash memory. A central processing unit (CPU) reads the code information corresponding to the command to be executed by the NAND flash memory from the code memory and stores the read code information in the register. A hard-wired logic circuit performs the NAND flash memory access according to the code information stored in the register.

Abstract: A flash memory system capable of improving an access performance and an access method thereof. The system includes: a flash memory device including a plurality of storage regions; a contents memory storing setting information corresponding to the plurality of storage regions, respectively; and a processing unit setting operation conditions of the flash memory device by referring to the setting information during an access operation for the flash memory device.

Abstract: A method of operating a non-volatile memory device includes maintaining a write voltage at a predetermined voltage level for programming and/or erasing a memory cell of the non-volatile memory device during a time between execution of consecutive write operations. For example, the write voltage may be activated at the predetermined voltage level responsive to an initial write command, and discharge of the write voltage may be prevented responsive to a signal indicating consecutive write commands. Related devices are also discussed.

Abstract: An integrated circuit card includes a central processing unit, a memory and an abnormal condition detector. The memory stores data to be processed by the central processing unit. The abnormal condition detector detects whether at least one operating condition of the integrated circuit card is within one of a suspend region or a reset region. The abnormal condition detector controls an operation of the central processing unit in accordance with the detection.

Abstract: An internal voltage generator and method are provided, the internal voltage generator including a first reference voltage generator for receiving an external voltage and providing a first reference voltage, a second reference voltage generator for receiving an internal voltage and providing a second reference voltage, and a voltage regulator in signal communication with the first reference voltage generator and/or the second reference voltage generator for receiving one of the first and second reference voltages and providing the internal voltage; and the method for generating an internal voltage including receiving an external voltage, generating a first reference voltage responsive to the received external voltage, regulating an internal voltage in correspondence with the first reference voltage, generating a second reference voltage responsive to the internal voltage, and regulating the internal voltage in correspondence with the second reference voltage.