Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.

Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.

Abstract: An apparatus and method provide a cloud brokerage service based on multiple cloud-computing systems. The method includes receiving, by a cloud service broker, a request for a cloud service from a cloud service client, the cloud service broker being connected with the multiple cloud-computing systems, providing, by the cloud service broker, a cloud service brokerage based on cloud services of the multiple cloud-computing systems, the cloud service brokerage enabling the cloud service complying with the request to be provided to the cloud service client, transmitting, by the cloud service broker, a control request for the cloud service to one or more cloud-computing systems of the multiple cloud-computing systems, and controlling, by the cloud service broker, a status of the cloud service after the cloud service broker receives an acknowledgment for the control request from the one or more cloud-computing systems.

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Abstract: An apparatus and method for processing sensitive data. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program is configured to, in an unprotected data area, read sensitive data from a storage device and transmit the same to a protected data area using the sensitive-data storage endpoint of the protected data area; to, in the protected data area, process the sensitive data using at least one endpoint when a command for a sensitive-data service requested by a client device is received from the unprotected data area; and to, in the unprotected data area, transmit the result of processing the sensitive data to the client device.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.

Abstract: Disclosed herein are an apparatus and method for providing a cloud brokerage service based on multiple clouds. The method includes receiving, by a cloud service broker, a request for a cloud service from a cloud service client, the cloud service broker being connected with the multiple cloud-computing systems; generating, by the cloud service broker, the cloud service complying with the request based on one or more services registered in a service catalogue of the cloud service broker; newly registering, by the cloud service broker, the generated cloud service in the service catalogue; and providing, by the cloud service broker, the newly registered cloud service to the cloud service client.

Abstract: Disclosed herein are a method and apparatus for virtual desktop service. The apparatus includes a connection manager configured to perform an assignment task of assigning a virtual machine to a user terminal using virtual desktop service, a resource pool configured to allocate software resources to a virtual desktop, wherein the software resources include an OS, applications, and user profiles, and a virtual machine infrastructure configured to support hardware resources including a CPU and a memory, wherein the connection manager is configured to perform a coordination task of coordinating a delivery protocol used between the user terminal and servers that provide the virtual desktop service, wherein the resource pool has a management function, wherein the management function is based on usage pattern information about a user's average usage of resources, and wherein the management function uses a physical distance on network from the user terminal to a server.

Abstract: Disclosed herein are an apparatus and method for providing storage for providing a cloud service. The apparatus includes a data distribution and storage unit for distributing data in order to store the data in integrated storage, including on-premises storage and cloud storage; a backend storage management unit for connecting to the integrated storage in order to store the data and providing information about storage tiering pertaining to the data; a data manipulation unit for providing the integrated storage as virtual data storage regardless of a location at which the data is actually stored; and a storage connection unit for providing a user with an interface for the virtual data storage as a single virtual storage unit.

Abstract: Disclosed herein are apparatus and method for validating service control status. The apparatus for validating service control status includes a service control request unit for requesting control of a service from a computing system, a service control status checking period generation unit for generating a service control status checking period in order to check completion of the service control, and a service control status checking communication unit for performing service control status checking communication with the computing system based on the service control status checking period.

Abstract: An apparatus and method for processing sensitive data. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program is configured to, in an unprotected data area, read sensitive data from a storage device and transmit the same to a protected data area using the sensitive-data storage endpoint of the protected data area; to, in the protected data area, process the sensitive data using at least one endpoint when a command for a sensitive-data service requested by a client device is received from the unprotected data area; and to, in the unprotected data area, transmit the result of processing the sensitive data to the client device.

Abstract: Disclosed herein are a virtual desktop server for supporting high-quality graphics processing and a method for processing high-quality graphics using the virtual desktop server. The virtual desktop server includes one or more virtual desktops for creating instructions for accelerated graphics processing by running a high-quality graphics application, one or more hardware-based graphics accelerators for creating screen data by executing the instructions for accelerated graphics processing and for storing the created screen data in a frame buffer, and a hypervisor for transmitting the screen data received from the virtual desktop to a client over a network, and the virtual desktop captures the screen data stored in the frame buffer, converts the captured screen data, and delivers the converted screen data to the hypervisor.

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Abstract: Disclosed herein are an apparatus and method for in-memory-based virtual desktop service. The apparatus for in-memory-based virtual desktop service includes a connection broker for performing a task for coordinating a delivery protocol that is used between at least one user terminal that uses virtual desktop service and multiple servers that provide the virtual desktop service, a resource pool for providing software resources including an Operating System (OS) for the virtual desktop service; and virtual machine infrastructure for supporting hardware resources, and dynamically allocating software stored in the software resources to the hardware resources.