Abstract: This invention relates to a method of achieving a solid-liquid separation of an oil-based mud comprising the step of contacting said oil-based mud with a water-in-oil emulsion comprising a polymer derived from at least one water-soluble monomer, where the polymer is not dissolved prior to contact with the oil-based mud, mixing the water-in-oil emulsion and the oil-based mud and separating the solid phase from the liquid phase in the oil-based mud. In addition, this invention also relates to a composition comprising an oil-based mud with a water-in-oil emulsion comprising a polymer derived from at least one water-soluble monomer, wherein the polymer is not dissolved prior to contact with the oil-based mud.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.

Abstract: This invention relates to a chemically amplified positive photoresist composition comprising a multi copolymer copolymer whose repeating units is represented by the following formula I, a low molecular additive represented by the following formula 2 or 3, an acid generator and a solvent wherein the repeating units comprising X and Y are independent monomers, respectively, selected from the group consisting of the following formulae (II), (III) and (IV):

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same. The cationic polymers contain anionic recurring units in amounts that encourage the formation of the aqueous dispersion and/or advantageously reduce the bulk viscosity of the aqueous dispersion.

Abstract: Aqueous dispersions of cationic water-soluble polymers are provided, as well as processes for making and methods of using the same.

Abstract: A copolymer represented by the formula I and a chemical amplification resist containing the copolymer, which can be easily controlled in sensitivity by regulating the content and kind of the norbornene derivatives in the matrix polymers in addition to being superior in adherence to substrate and dry etch resistance: ##STR1## wherein, X is selected from the group consisting of the following general formulas II, III and IV; and, l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=1 and 0.4.ltoreq.o.ltoreq.0.

Abstract: This invention relates to a sulfonium salt, including its manufacturing method, which is effectively used as a photoacid initiator or radical photoinitiator during polymerization and a photoacid generator, leaving the protection groups of organic compounds, especially as an useful photoacid generator of the chemically amplified photoresist employed in semiconductor materials. Since the sulfonium salt of this invention, so prepared via one-step reaction between sulfoxide compound and aromatic compound in the presence of perfluoroalkanesulfonic anhydride, has the advantages in that by overcoming some shortcomings of the prior art to prepare the sulfonium salt via two steps using Grinard reagent, this invention may provide a novel sulfonium salt with higher yield which cannot be achieved in the prior art and also to prepare even any conventional sulfonium salt having better yield.

Abstract: A polymer having a repeating unit represented by the following general formula I and a chemical amplification positive photoresist composition comprising the copolymer and a photoacid generator. The hydroxy group introduced into the polymer gives a great contribution to the adhesiveness of the composition to substrate and allows the composition to be applied to any substrate. In addition, the photoresist composition is superior in resolution, thermal resistance, etch resistance, and post-exposure storage stability and can be developed without changing the concentration of developing solution.

Abstract: A copolymer having a repeating unit represented by the following general formula I and a chemical amplification positive photoresist composition having the copolymer and a photoacid generator. The photoresist can allow for a good pattern shape even though a post-baking is taken in a somewhat delayed time and for a use of any radiation, such as uv light, deep uv light and charged particle beam. Also, it is superior in storage stability and resolution so that it is useful for the high integration of semiconductor devices. The polymer ranges, in polystyrene-reduced average molecular weight, from 1,000 to 1,000,000. The polymer is represented by the following repeating pattern: ##STR1## wherein, R.sub.1, R.sub.2 and R.sub.3 independently represent a hydrogen atom or a methyl; R.sub.4, R.sub.5 and R.sub.6 independently represent a hydrogen atom, an alkyl group, an alkoxy group or a halogen; 1, m, n each is a repeating number satisfying the condition that 0.3<1/(m+n)<0.9, 0.1<m/(1+n)<0.6 and 0.

Abstract: Mannich (alk)acrylamide microparticles are produced at high solids contents without a significant increase in bulk viscosity by inverse microemulsion polymerization and provide superior dewatering characteristics.

Abstract: Mannich (alk)acrylamide microparticles are produced at high solids contents without a significant increase in bulk viscosity by inverse microemulsion polymerization and provide superior dewatering characteristics.

Abstract: Mannich (alk)acrylamide microparticles are produced at high solids contents without a significant increase in bulk viscosity by inverse microemulsion polymerization and provide superior dewatering characteristics.