Patents by Inventor Sung Ahn

Sung Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220194969
    Abstract: Provided are metal halide perovskite light emitting device and method of manufacturing the same. The metal halide perovskite light emitting device uses perovskite film having a multi-dimensional crystal structure derived from a proton transfer reaction as light emitting layer. Due to self-assembled shell of the perovskite film, ion movement is suppressed and surface defects are removed. Thereby, photoluminescence intensity, luminescence efficiency and lifetime are improved. By injecting a fluorine-based material and a basic material into the PEDOT:PSS conductive polymer used as the conventional hole injection layer, the acidity is controlled and the work function of the interface is improved. Furthermore, chemically stable graphene barrier layer protects the electrode vulnerable to acid, so that a high-efficiency light emitting device can be manufactured.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 23, 2022
    Inventors: Tae-Woo LEE, Joo Sung KIM, Sung Joo KWON, So Yeong AHN, Ho Beom KIM
  • Publication number: 20220199789
    Abstract: A semiconductor device includes a first active pattern disposed on a substrate, a device isolation layer filling a trench that defines the first active pattern, a first channel pattern and a first source/drain pattern disposed on the first active pattern in which the first channel pattern includes semiconductor patterns stacked and spaced apart from each other, a gate electrode that extends and runs across the first channel pattern, a gate dielectric layer disposed between the first channel pattern and the gate electrode, and a first passivation pattern disposed between the device isolation layer and a first sidewall of the first active pattern. The first passivation pattern includes an upper part that protrudes upwardly from the device isolation layer, and a lower part buried in the device isolation layer. The gate dielectric layer covers the upper part of the first passivation pattern.
    Type: Application
    Filed: August 19, 2021
    Publication date: June 23, 2022
    Inventors: SUNG SOO KIM, JOOHAN KIM, GYUHWAN AHN, IK SOO KIM, JONGMIN BAEK
  • Patent number: 11365348
    Abstract: A quantum dot includes a core including a first semiconductor nanocrystal and a multi-layered shell disposed on the core and including at least two layers, a production method thereof, and an electronic device including the same. The quantum dot does not include cadmium; the first semiconductor nanocrystal includes a Group III-V compound, the multi-layered shell includes a first layer surrounding at least a portion of a surface of the core, the first layer including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group II-V compound, and a second layer disposed on the first layer, the second layer including a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: June 21, 2022
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Young Seok Park, Eun Joo Jang, Shin Ae Jun, Nayoun Won, Jooyeon Ahn, Sung Woo Kim
  • Patent number: 11367815
    Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: June 21, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae-Bum Han, Young Gil Park, Jung Hwa Park, Na Ri Ahn, Soo Im Jeong, Ki Nam Kim, Moon Sung Kim
  • Publication number: 20220176514
    Abstract: A polishing pad sheet which provides optimized interfacial properties for the laminated structure of a polishing pad based on appropriate elasticity and high durability, and in which the polishing pad having the polishing pad sheet applied thereto not only has its intrinsic function such as the polishing rate or the like, but also is capable of realizing the function without damage even during the polishing process in a wet environment for a long time, and a polishing pad to which the polishing pad sheet is applied. The polishing pad sheet includes: a first surface which is a polishing layer attachment surface; and a second surface which is a rear surface of the first surface, wherein the first surface has a value of the following Equation 1 of 4.20 to 5.50: 4.20?(|Sv|)/Sz×P (%)?5.50.
    Type: Application
    Filed: December 7, 2021
    Publication date: June 9, 2022
    Inventors: Sung Hoon YUN, Kyung Hwan Kim, Jae In Ahn, Jang Won Seo
  • Publication number: 20220173212
    Abstract: A semiconductor device includes first and second active patterns on a substrate, the first and second active patterns adjacent to each other in a first direction with a first trench between the first and second active patterns, third and fourth active patterns on the substrate, the third and fourth active patterns adjacent to each other in the first direction with a second trench between the third and fourth active patterns. The semiconductor device includes a first device isolation layer in the first trench, and a second device isolation layer in the second trench. A width of the second trench in the first direction is greater than a width of the first trench in the first direction. The second device isolation layer includes a first protrusion and a second protrusion which protrude from a top surface of the second device isolation layer.
    Type: Application
    Filed: February 9, 2022
    Publication date: June 2, 2022
    Inventors: GYUHWAN AHN, SUNG SOO KIM, CHAEHO NA, WOONGSIK NAM, DONGHYUN ROH
  • Publication number: 20220170883
    Abstract: Provided is a method for selecting a material for an organic light-emitting device, the method including comparing the reversibilities (electrical stability in the (+) radical and (?) radical states of a material) of the material using cyclic voltammetry (CV).
    Type: Application
    Filed: May 15, 2020
    Publication date: June 2, 2022
    Inventors: Jihye KIM, Sung Kil HONG, Yeon Hwan KIM, Daegyeon KWON, Heesung AHN
  • Patent number: 11349122
    Abstract: A positive active material for a rechargeable lithium battery includes nickel-based lithium transition metal oxide secondary particles, in which a plurality of primary particles are aggregated. The primary particles include polycrystalline primary particles composed of 2 to 10 single crystals, and each of the single crystals has a particle diameter of about 0.5 ?m to about 3 ?m.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: May 31, 2022
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Youngsun Kong, Kiyong Ahn, Jinyoung Kim, Sung Ho Choo, Seonyoung Kwon
  • Patent number: 11345671
    Abstract: The present invention relates to a novel phenylsulfonyl oxazole derivative and a use thereof and specifically, to a compound represented by Chemical Formula 1 in the present specification or a pharmaceutically acceptable salt thereof, and to a use thereof for prevention, treatment, or improvement of neurodegenerative disease.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: May 31, 2022
    Assignees: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Jae Sung Bae, Hee Kyung Jin, Myung Shik Lee, Hye Jin Lim, Jin Hee Ahn, Haushabhau Shivaji Pagire, Min Jae Lee
  • Publication number: 20220164143
    Abstract: A memory device includes: a plurality of memory cells; soft read logic configured to generate soft data by reading data from the plurality of memory cells in response to a soft read command from a controller, the soft data including at least a major symbol and at least a minor symbol; a compressor configured to generate compressed data by: encoding, into a code alphabet having a second length, a major source alphabet including repetitions of the major symbol by a first length among a plurality of source alphabets included in the soft data, and encoding, into a code alphabet having a longer length than the second length, a minor source alphabet including repetitions of the major symbol by a shorter length than the first length and ending with one minor symbol; and an interface configured to provide the compressed data to the controller.
    Type: Application
    Filed: May 19, 2021
    Publication date: May 26, 2022
    Inventors: Dae Sung KIM, Sung Ho AHN, Sin Ho YANG, Jae Hyeong JEONG
  • Patent number: 11342351
    Abstract: A three-dimensional semiconductor device includes an upper substrate, a gate-stacked structure on the upper substrate, the gate-stacked structure including gate electrodes stacked within a memory cell array region, while being spaced apart from each other in a direction perpendicular to a surface of the upper substrate, and extending into an extension region adjacent to the memory cell array region to be arranged within the extension region to have a staircase shape, and at least one through region passing through the gate-stacked structure within the memory cell array region or the extension region, the at least one through region including a lower region and an upper region wider than the lower region.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: May 24, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong Seon Ahn, Ji Sung Cheon, Young Jin Kwon, Seok Cheon Baek, Woong Seop Lee
  • Patent number: 11335274
    Abstract: An embodiment relates to a temperature sensor having a correction function and is able to reduce errors in measurement by the temperature sensor by calibrating a correlation between temperature and voltage.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: May 17, 2022
    Assignee: SILICON WORKS CO., LTD.
    Inventors: Jeong Lee, Kyung Min Shin, Yong Sung Ahn, Gi Woong Shin
  • Patent number: 11327079
    Abstract: The present invention relates to a method of directly detecting, using a mass-spectrometry method, whether a microorganism contained in a sample is resistant to antibiotics, and a kit for detection used therewith. More particularly, the present invention relates to a method and kit for directly detecting an antibiotic hydrolase secreted by a microorganism resistant to antibiotics, thereby directly determining whether the microorganism is resistant to antibiotics. According to the present invention, it is possible to very simply and immediately confirm whether a specific strain is resistant to antibiotics in the field. In particular, a complicated pretreatment process such as proteolysis is not performed, and a complicated identification process of calibrating and then combining the obtained results is not performed.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: May 10, 2022
    Assignee: DK HOLDINGS COMPANY, LTD
    Inventors: Kye Shin Park, Joon Sang Park, Eun Hee Lee, Dong Hwi Hwang, In Jung Ji, Jae Woo Roh, Jin Sung Ahn, Eun-Jeong Yoon, Ji Hye Ko
  • Publication number: 20220131936
    Abstract: A method performed by a computing device for controlling a P2P connection according to an embodiment of the present disclosure includes obtaining network information of a current path for transmitting and receiving data, calculating requested data quality of the current path by using the network information, and changing a network path to an alternative path by using previously stored data quality history information of the alternative path when a difference between a predetermined highest data quality and the requested data quality of the current path is equal to or greater than a reference value.
    Type: Application
    Filed: October 21, 2021
    Publication date: April 28, 2022
    Inventors: Ho Sung AHN, Seo Young LEE, Hee Tae YOON, Jun Ho KANG, Young Jin KIM, Sang Bum CHO
  • Patent number: 11308836
    Abstract: A source driving circuit includes a first source channel configured to output a first source driving signal to a display panel; a second source channel configured to output a second source driving signal to the display panel; a first gamma circuit configured to output first gamma values to the first source channel; and a second gamma circuit configured to output second gamma values to the second source channel. The first gamma circuit may set the first gamma values to values corresponding to red or green depending on a first switching operation of a first demultiplexer of the display panel corresponding to the first source channel. The second gamma circuit may set the second gamma values to values corresponding to blue or green depending on a second switching operation of a second demultiplexer of the display panel corresponding to the second source channel.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: April 19, 2022
    Assignee: Silicon Works Co., Ltd.
    Inventor: Yong Sung Ahn
  • Patent number: 11308877
    Abstract: Provided are a display driving device capable of accurately detecting characteristics of pixels of a display panel regardless of an offset of an amplifier, and a display device including the same. The display device includes a display panel including pixels and a display driving device including a sense circuit configured to detect pixel signals from the pixels. The sense circuit includes sense amplifiers configured to provide the first reference voltage to the pixels so that the pixels are programmed using a first reference voltage in a programming mode.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: April 19, 2022
    Assignee: Silicon Works Co., Ltd.
    Inventors: Jeong Lee, Sung Ha Kim, Yong Sung Ahn, Kyung Min Shin, Jung Ryeol Park
  • Patent number: 11294508
    Abstract: According to an embodiment, it is possible to efficiently use resources by restoring a clock from an image signal including a clock in image data and using the restored clock in a section in which the image signal is not received.
    Type: Grant
    Filed: February 4, 2021
    Date of Patent: April 5, 2022
    Assignee: SILICON WORKS CO., LTD.
    Inventor: Yong Sung Ahn
  • Publication number: 20220001345
    Abstract: Various embodiments disclosed relate to asphalt emulsifiers. An emulsifier has the structure R1—C(O)-A-(CH2)n—N(R2) (R3), or a salt thereof wherein the —N(R2)(R3) nitrogen is quaternized as —N+(R2)(R3)(R4), or an N-oxide thereof wherein the —N(R2) (R3) nitrogen is oxidized as —N+(R2)(R3)(O?). The variable A is —NH— or —O—. The variable R1 is chosen from (C4-C22)alkyl, substituted (C4-C22)alkyl, (C4-C22)alkenyl, and substituted (C4-C22)alkenyl. The variables R2 and R3 are each independently chosen from (C1-C10)alkyl and substituted (C1-C10)alkyl. The variable R4 is chosen from —H, (C1-C20)hydrocarbyl, and substituted (C1-C20)hydrocarbyl. The variable n is 1 to 10. Various embodiments include methods of making the emulsifier such as from a fatty acid source and an amine starting material, emulsions including the emulsifier and methods of making the same, and methods of using the emulsion including contacting asphalt or bitumen with the emulsion.
    Type: Application
    Filed: October 11, 2019
    Publication date: January 6, 2022
    Applicant: CARGILL, INCORPORATED
    Inventors: Sung AHN, Todd L. KURTH, Hassan Ali TABATABAEE
  • Patent number: 11217144
    Abstract: A driver integrated circuit (IC) according to one embodiment of the present disclosure includes a first IC, a second IC that is combined with the first IC, a first circuit configured to receive first image data, and generate second image data by correcting the first image data, a second circuit configured to sample the second image data, and a third circuit configured to convert the sampled second image data into a source signal, wherein the first circuit is mounted on the first IC, the second circuit is mounted on one of the first IC and the second IC, and the third circuit is mounted on the second IC.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: January 4, 2022
    Assignee: SILICON WORKS CO., LTD.
    Inventors: Yong Sung Ahn, Sung Ha Kim, Goon Seok Oh
  • Publication number: 20210383863
    Abstract: Provided herein are a nonvolatile memory device and a method of programming the same. The nonvolatile memory device includes a memory cell array including a plurality of word lines having a first word line and a plurality of memory cells connected to the first word line. The plurality of memory cells includes a plurality of monitoring cells and a plurality of data cells each data cell configured to store N-bit data, N being a natural number. The nonvolatile memory device is configured to perform a first program on the plurality of data cells and a detection program different from the first program on the one or more monitoring cells after performing the first program.
    Type: Application
    Filed: August 21, 2021
    Publication date: December 9, 2021
    Inventors: Ho-Sung AHN, Youn-Soo CHEON