Patents by Inventor Sung-bock Kim
Sung-bock Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10852617Abstract: A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 ?m and no greater than about 30 ?m.Type: GrantFiled: March 7, 2019Date of Patent: December 1, 2020Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee Kwon, Kisoo Kim, Sung Bock Kim, Young Ahn Leem
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Publication number: 20190278151Abstract: A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 ?m and no greater than about 30 ?m.Type: ApplicationFiled: March 7, 2019Publication date: September 12, 2019Inventors: Oh Kee KWON, Kisoo KIM, Sung Bock KIM, Young Ahn LEEM
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Patent number: 10249750Abstract: A semiconductor device includes a first semiconductor layer. A second semiconductor layer is disposed on the first semiconductor layer. A structure layer is disposed on the second semiconductor layer. A metal film covers a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and an upper surface of the structure layer. A flexible substrate covers the metal film.Type: GrantFiled: April 30, 2018Date of Patent: April 2, 2019Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung-Bum Bae, Sung Bock Kim
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Publication number: 20180254337Abstract: A semiconductor device includes a first semiconductor layer. A second semiconductor layer is disposed on the first semiconductor layer. A structure layer is disposed on the second semiconductor layer. A metal film covers a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and an upper surface of the structure layer. A flexible substrate covers the metal film.Type: ApplicationFiled: April 30, 2018Publication date: September 6, 2018Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung-Bum BAE, Sung Bock KIM
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Patent number: 9991374Abstract: A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first substrate, forming a trench which penetrates the third epitaxial layer, the second epitaxial layer, and the sacrificial layer, forming a structure layer on an upper surface of the third epitaxial layer, forming a metal film which covers an inner surface of the trench and the structure layer, forming a second substrate which fills the trench and covers the metal film, and separating the second epitaxial layer, the third epitaxial layer, and the structure layer from the first epitaxial layer.Type: GrantFiled: May 10, 2017Date of Patent: June 5, 2018Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung-Bum Bae, Sung Bock Kim
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Publication number: 20180033879Abstract: A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first substrate, forming a trench which penetrates the third epitaxial layer, the second epitaxial layer, and the sacrificial layer, forming a structure layer on an upper surface of the third epitaxial layer, forming a metal film which covers an inner surface of the trench and the structure layer, forming a second substrate which fills the trench and covers the metal film, and separating the second epitaxial layer, the third epitaxial layer, and the structure layer from the first epitaxial layer.Type: ApplicationFiled: May 10, 2017Publication date: February 1, 2018Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung-Bum BAE, Sung Bock KIM
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Publication number: 20150349208Abstract: Provided herein is a semiconductor light emitting device capable of increasing the light extraction efficiency and a fabricating method thereof, the device including a buffer layer formed on a substrate; an n-type semiconductor layer formed on the buffer; an active layer formed on a partial area of the n-type semiconductor layer such that the n-type semiconductor layer is exposed; a p-type semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type semiconductor layer; a first mesa surface formed along a side wall of the active layer from a side wall of the transparent conductive layer; a passivation layer formed along the first mesa surface; and a metal reflectance film formed along the passivation layer such that it re-reflects escaping light, thereby re-reflecting escaping light to increase the light extraction efficiency.Type: ApplicationFiled: January 14, 2015Publication date: December 3, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Dong Churl KIM, Sung Bock KIM, Jong Bae KIM, Ju Hee BAEK
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Publication number: 20150155434Abstract: Disclosed are a light emitting diode including: a buffer layer formed on a substrate; a Distributed Bragg Reflector (DBR) formed in a multilayer structure, in which mask patterns including opening regions and semiconductor layers formed on the mask patterns while being filled in the opening regions of the mask patterns are alternately formed, and formed on the buffer layer; and a light emitting structure formed on the DBR, and a manufacturing method thereof.Type: ApplicationFiled: February 27, 2014Publication date: June 4, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Sung Bock KIM, Sung Bum BAE
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Patent number: 8993991Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.Type: GrantFiled: July 29, 2011Date of Patent: March 31, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: Dongwoo Suh, Sung Bock Kim, Hojun Ryu
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Patent number: 8937002Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.Type: GrantFiled: March 31, 2014Date of Patent: January 20, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Bum Bae, Eun Soo Nam, Jae Kyoung Mun, Sung Bock Kim, Hae Cheon Kim, Chull Won Ju, Sang Choon Ko, Jong-Won Lim, Ho Kyun Ahn, Woo Jin Chang, Young Rak Park
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Publication number: 20140225121Abstract: Provided are an aluminum gallium nitride template and a fabrication method thereof. The fabrication method includes forming an aluminum nitride (AlN) layer on a substrate, forming a first aluminum gallium nitride (AlxGa1-xN) layer on the aluminum nitride (AlN) layer, forming a second aluminum gallium nitride (AlyGa1-yN) layer on the first aluminum gallium nitride (AlxGa1-xN) layer, forming a third aluminum gallium nitride (AlzGa1-zN) layer on the second aluminum gallium nitride (AlyGal-yN) layer, wherein the first aluminum gallium nitride (AlxGa1-xN) layer, the second aluminum gallium nitride (AlyGa1-yN) layer, and the third aluminum gallium nitride (AlzGa1-zN) layer are formed to have crystal defects and a composition ratio of aluminum (where 1>x>y>z>0) that are gradually decreased as heights of the layers are increased.Type: ApplicationFiled: December 30, 2013Publication date: August 14, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Sung-Bum BAE, Sung Bock KIM, Eun Soo NAM
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Publication number: 20140213045Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.Type: ApplicationFiled: March 31, 2014Publication date: July 31, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Sung Bum BAE, Eun Soo NAM, Jae Kyoung MUN, Sung Bock KIM, Hae Cheon KIM, Chull Won JU, Sang Choon KO, Jong-Won LIM, Ho Kyun AHN, Woo Jin CHANG, Young Rak PARK
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Publication number: 20140179088Abstract: The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern.Type: ApplicationFiled: May 20, 2013Publication date: June 26, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Sung-Bum BAE, Sung Bock Kim, Jae Kyoung Mun, Eun Soo Nam
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Patent number: 8759204Abstract: The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern.Type: GrantFiled: May 20, 2013Date of Patent: June 24, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Sung-Bum Bae, Sung Bock Kim, Jae Kyoung Mun, Eun Soo Nam
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Patent number: 8723222Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.Type: GrantFiled: July 13, 2012Date of Patent: May 13, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Bum Bae, Eun Soo Nam, Jae Kyoung Mun, Sung Bock Kim, Hae Cheon Kim, Chull Won Ju, Sang Choon Ko, Jong-Won Lim, Ho Kyun Ahn, Woo Jin Chang, Young Rak Park
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Publication number: 20130087763Abstract: The inventive concept provides light emitting diodes and methods of manufacturing the same. The light emitting diode may include a first electrode layer, a light emitting layer on the first electrode layer, a second electrode layer on the light emitting layer, and a buffer layer formed on the second electrode layer, the buffer layer having concave-convex patterns increasing extraction efficiency of light generated from the light emitting layer.Type: ApplicationFiled: September 11, 2012Publication date: April 11, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Bock Kim, Sung-Bum Bae
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Publication number: 20130020649Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.Type: ApplicationFiled: July 13, 2012Publication date: January 24, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Bum BAE, Eun Soo NAM, Jae Kyoung MUN, Sung Bock KIM, Hae Cheon KIM, Chull Won JU, Sang Choon KO, Jong-Won LIM, Ho Kyun AHN, Woo Jin CHANG, Young Rak PARK
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Publication number: 20120145999Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.Type: ApplicationFiled: July 29, 2011Publication date: June 14, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Dongwoo Suh, Sung Bock Kim, Hojun Ryu
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Patent number: 7813388Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.Type: GrantFiled: October 31, 2007Date of Patent: October 12, 2010Assignee: Electronics And Telecommunications Research InstituteInventors: Kyung Hyun Park, Hyun Sung Ko, Young Ahn Leem, Min Yong Jeon, Eun Deok Sim, Sung Bock Kim
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Patent number: 7680169Abstract: A multi-section semiconductor laser diode is disclosed. The laser diode includes a complex-coupled DFB laser section that includes a complex-coupled grating and an active structure for controlling the intensity of oscillating laser light, to oscillate laser light in a single mode, and an external cavity including a phase control section and an amplifier section, the phase control section having a passive waveguide that controls a phase variation of feedback laser light, the amplification section having an active structure that controls the strength of the feedback laser light. Currents are separately provided to the three sections to generate optical pulses with tuning range of tens of GHz. Applications include the clock recovery in the 3R regeneration of the optical communication.Type: GrantFiled: December 1, 2003Date of Patent: March 16, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Kyung-Hyun Park, Dae-Su Yee, Dong-Churl Kim, Young-Ahn Leem, Sung-Bock Kim