Abstract: Provided is a silicate glass, a method for preparing a silicate glass-ceramics by using the silicate glass, and a method for preparing a lithium disilicate glass-ceramics by using the silicate glass, and more particularly, to a method for preparing a glass-ceramics that has a nanosize of 0.2 to 0.5 ?m and contains lithium disilicate and silicate crystalline phases. A nano lithium disilicate glass-ceramics containing a SiO2 crystalline phase includes: a glass composition including 70 to 85 wt % SiO2, 10 to 13 wt % Li2O, 3 to 7 wt % P2O5 working as a nuclei formation agent, 0 to 5 wt % Al2O3 for increasing a glass transition temperature and a softening point and enhancing chemical durability of glass, 0 to 2 wt % ZrO2, 0.5 to 3 wt % CaO for increasing a thermal expansion coefficient of the glass, 0.5 to 3 wt % Na2O, 0.5 to 3 wt % K2O, and 1 to 2 wt % colorants, and 0 to 2.0 wt % mixture of MgO, ZnO, F, and La2O3.

Abstract: Provided is a dental blank. The dental blank includes: a seating portion provided in an artificial tooth processing apparatus; and a material portion configured to be inserted into the seating portion, wherein the material portion includes a plurality of outer contacting portions in contact with an inner side of the seating portion, and may have a polygonal shape in a cross-section.

Abstract: An embodiment of the present invention provides a cosmetic material impregnation member configured to be impregnated with a cosmetic material, which is applied to a cosmetic applicator when used, and a method for manufacturing the same. The member may comprise: an upper fabric layer woven to have a first mesh structure; a lower fabric layer woven to have a second mesh structure; and a support layer which includes a plurality of fiber yarns woven to connect the upper fabric layer and the lower fabric layer and forms an impregnation space for the cosmetic material between the upper fabric layer and the lower fabric layer.

Abstract: The present application relates to an encapsulation film, an organic electronic device comprising the same, and a method for manufacturing an organic electronic device using the same, which provides an encapsulation film having excellent reliability that allows forming a structure capable of blocking moisture or oxygen flowing into an organic electronic device from the outside, absorbs and disperses the stress according to panel bending, while preventing generation of bright spots in the organic electronic device.

Abstract: A locking system for vehicles is disclosed. After the engine is turned off, the vehicle in accordance with this invention checks whether it is in a garage with limited space. If it is, it leaves the doors unlocked. If it determines that it is not in a garage with limited space, it checks if the car key is inside the car after the driver exited the car. If it is, it sets off an alarm for the driver to retrieve the key. If the car key is not inside the car, it further checks if the key is in close proximity. When it no longer detects the key in its close proximity outside the car, it automatically locks the doors.

Abstract: A pickup apparatus includes a plurality of pickers sliding along a first direction and a space adjuster including a plurality of space adjusting plates. Each picker includes a protruding portion combined with a picker body, and each of the space adjusting plates is between a respective pair of adjacent pickers. The protruding portion of each picker contacts sidewalls of adjacent space adjusting plates. At least one of the space adjusting plates moves along a second direction crossing the first direction. A width in the first direction of each space adjusting plate varies along the second direction.

Abstract: A pickup apparatus includes a plurality of pickers sliding along a first direction and a space adjuster including a plurality of space adjusting plates. Each picker includes a protruding portion combined with a picker body, and each of the space adjusting plates is between a respective pair of adjacent pickers. The protruding portion of each picker contacts sidewalls of adjacent space adjusting plates. At least one of the space adjusting plates moves along a second direction crossing the first direction. A width in the first direction of each space adjusting plate varies along the second direction.

Abstract: A mounting system for a mobile device such as a mobile phone on a vehicle dashboard is disclosed. The mobile phone is mounted on a surface of the dashboard and includes sun shielding via a built in sun shield which shields a vehicle display in front of the driver, and extends rearward over the mobile phone to sufficiently shield the mobile phone screen when the mobile phone is mounted in the mounting location provided. The mounting allows the mobile device to be tilted to a desired angle, and optionally provides wireless charging circuitry to enable charging of the device while mounted.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: A constant-velocity joint assembly includes: a first and a second shaft portions respectively provided with a protrusion; a double yoke portion in which a guide hole is formed along an axis direction, the first and the second shaft portions being respectively rotatably connected to both sides of the guide hole with an axis of an upper/lower direction; and a guide portion which is disposed to the guide hole to guide the protrusion and rotates along an inner circumference of the guide hole during rotation of the shaft portions, wherein the first and the second shaft portions respectively comprises: a spider body, a left and a right leg, and an upper and a lower legs; a shaft provided with the protrusion; and a yoke block comprising a block body, and a left and a right connecting member.

Abstract: A semiconductor device, which can improve reading and writing stability of a static random access memory (SRAM) is provided.

Abstract: Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: A method of fabricating a fin field effect transistor may include forming a fin portion protruding from a substrate, forming a device isolation layer to cover a lower sidewall of the fin portion, forming a semiconductor layer using an epitaxial method to cover an upper sidewall and a top surface of the fin portion, selectively etching an upper portion of the device isolation layer to form a gap region between a top surface of the device isolation layer and a bottom surface of the semiconductor layer, and forming a gate electrode pattern on the semiconductor layer to fill the gap region. Related devices are also described.

Abstract: A constant-velocity joint assembly includes: a first and a second shaft portions respectively provided with a protrusion; a double yoke portion in which a guide hole is formed along an axis direction, the first and the second shaft portions being respectively rotatably connected to both sides of the guide hole with an axis of an upper/lower direction; and a guide portion which is disposed to the guide hole to guide the protrusion and rotates along an inner circumference of the guide hole during rotation of the shaft portions, wherein the first and the second shaft portions respectively comprises: a spider body, a left and a right leg, and an upper and a lower legs; a shaft provided with the protrusion; and a yoke block comprising a block body, and a left and a right connecting member.

Abstract: A vehicle locator system comprising: a remote keyless entry transmitter for vehicles (key fob) having a rechargeable battery, a timer, a GPS/RF locator circuit, a first, second and third button and a display window. When the key fob is inserted in the key hole or in the base cradle of the vehicle, the vehicle's main battery charges the rechargeable battery. The first button, when pressed, unlocks the vehicle at the same time it turns on the GPS/RF connection. The second button, when pressed, locks the vehicle and records the location of the vehicle. The timer maintains the GPS/RF circuit on for a predetermined period of time. The third button, when pressed, shows the location of the vehicle almost immediately on the display window of the key fob by showing the address of the location alongwith direction and the distance to the vehicle.

Abstract: A method of fabricating a fin field effect transistor may include forming a fin portion protruding from a substrate, forming a device isolation layer to cover a lower sidewall of the fin portion, forming a semiconductor layer using an epitaxial method to cover an upper sidewall and a top surface of the fin portion, selectively etching an upper portion of the device isolation layer to form a gap region between a top surface of the device isolation layer and a bottom surface of the semiconductor layer, and forming a gate electrode pattern on the semiconductor layer to fill the gap region. Related devices are also described.