Abstract: Disclosed is a bulk block for manufacturing a prosthesis having high aesthetics and processability required for one-day dental prosthetic materials, which is a dental composite bulk block comprising a glass ceramic matrix and a polymer, wherein the glass ceramic matrix consists of an amorphous glass matrix and a crystalline phase dispersed in the glass matrix, the crystalline phase comprises as a main crystalline phase at least one selected from a leucite crystalline phase and a lithium disilicate crystalline phase, and has an average particle diameter of 0.01-1.0 ?m, and the polymer is included in an amount of 20-40 wt % with respect to the weight of the total bulk block. The bulk block has the advantages of improved mechanical properties, being capable of preventing microleakage, exhibiting excellent aesthetics, and enabling machining.

Abstract: Proposed is a detachable lighting device including lighting units. The positions of the lighting units are changeable along a mounting rail within an interior space. The number of the lighting units and the mounting positions of the lighting units are adjustable. Accordingly, occupants within the interior space adjust light distribution as desired by each occupant.

Abstract: A locking system for vehicles is disclosed. After the engine is turned off, the vehicle in accordance with this invention checks whether it is in a garage with limited space. If it is, it leaves the doors unlocked. If it determines that it is not in a garage with limited space, it checks if the car key is inside the car after the driver exited the car. If it is, it sets off an alarm for the driver to retrieve the key. If the car key is not inside the car, it further checks if the key is in close proximity. When it no longer detects the key in its close proximity outside the car, it automatically locks the doors.

Abstract: A pickup apparatus includes a plurality of pickers sliding along a first direction and a space adjuster including a plurality of space adjusting plates. Each picker includes a protruding portion combined with a picker body, and each of the space adjusting plates is between a respective pair of adjacent pickers. The protruding portion of each picker contacts sidewalls of adjacent space adjusting plates. At least one of the space adjusting plates moves along a second direction crossing the first direction. A width in the first direction of each space adjusting plate varies along the second direction.

Abstract: A pickup apparatus includes a plurality of pickers sliding along a first direction and a space adjuster including a plurality of space adjusting plates. Each picker includes a protruding portion combined with a picker body, and each of the space adjusting plates is between a respective pair of adjacent pickers. The protruding portion of each picker contacts sidewalls of adjacent space adjusting plates. At least one of the space adjusting plates moves along a second direction crossing the first direction. A width in the first direction of each space adjusting plate varies along the second direction.

Abstract: A mounting system for a mobile device such as a mobile phone on a vehicle dashboard is disclosed. The mobile phone is mounted on a surface of the dashboard and includes sun shielding via a built in sun shield which shields a vehicle display in front of the driver, and extends rearward over the mobile phone to sufficiently shield the mobile phone screen when the mobile phone is mounted in the mounting location provided. The mounting allows the mobile device to be tilted to a desired angle, and optionally provides wireless charging circuitry to enable charging of the device while mounted.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: A constant-velocity joint assembly includes: a first and a second shaft portions respectively provided with a protrusion; a double yoke portion in which a guide hole is formed along an axis direction, the first and the second shaft portions being respectively rotatably connected to both sides of the guide hole with an axis of an upper/lower direction; and a guide portion which is disposed to the guide hole to guide the protrusion and rotates along an inner circumference of the guide hole during rotation of the shaft portions, wherein the first and the second shaft portions respectively comprises: a spider body, a left and a right leg, and an upper and a lower legs; a shaft provided with the protrusion; and a yoke block comprising a block body, and a left and a right connecting member.

Abstract: A semiconductor device, which can improve reading and writing stability of a static random access memory (SRAM) is provided.

Abstract: Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: A method of fabricating a fin field effect transistor may include forming a fin portion protruding from a substrate, forming a device isolation layer to cover a lower sidewall of the fin portion, forming a semiconductor layer using an epitaxial method to cover an upper sidewall and a top surface of the fin portion, selectively etching an upper portion of the device isolation layer to form a gap region between a top surface of the device isolation layer and a bottom surface of the semiconductor layer, and forming a gate electrode pattern on the semiconductor layer to fill the gap region. Related devices are also described.

Abstract: A constant-velocity joint assembly includes: a first and a second shaft portions respectively provided with a protrusion; a double yoke portion in which a guide hole is formed along an axis direction, the first and the second shaft portions being respectively rotatably connected to both sides of the guide hole with an axis of an upper/lower direction; and a guide portion which is disposed to the guide hole to guide the protrusion and rotates along an inner circumference of the guide hole during rotation of the shaft portions, wherein the first and the second shaft portions respectively comprises: a spider body, a left and a right leg, and an upper and a lower legs; a shaft provided with the protrusion; and a yoke block comprising a block body, and a left and a right connecting member.

Abstract: A vehicle locator system comprising: a remote keyless entry transmitter for vehicles (key fob) having a rechargeable battery, a timer, a GPS/RF locator circuit, a first, second and third button and a display window. When the key fob is inserted in the key hole or in the base cradle of the vehicle, the vehicle's main battery charges the rechargeable battery. The first button, when pressed, unlocks the vehicle at the same time it turns on the GPS/RF connection. The second button, when pressed, locks the vehicle and records the location of the vehicle. The timer maintains the GPS/RF circuit on for a predetermined period of time. The third button, when pressed, shows the location of the vehicle almost immediately on the display window of the key fob by showing the address of the location alongwith direction and the distance to the vehicle.

Abstract: A method of fabricating a fin field effect transistor may include forming a fin portion protruding from a substrate, forming a device isolation layer to cover a lower sidewall of the fin portion, forming a semiconductor layer using an epitaxial method to cover an upper sidewall and a top surface of the fin portion, selectively etching an upper portion of the device isolation layer to form a gap region between a top surface of the device isolation layer and a bottom surface of the semiconductor layer, and forming a gate electrode pattern on the semiconductor layer to fill the gap region. Related devices are also described.

Abstract: A memory device, such as a DRAM, SRAM or non-volatile memory device, includes a substrate, a gate electrode disposed on the substrate, and source and drain regions in the substrate adjacent respective first and second sidewalls of the gate electrode. First and second sidewall spacers are disposed on respective ones of the first and second sidewalls of the gate electrode. The first and second sidewall spacers have different dielectric constants. The first and second sidewall spacers may be substantially symmetrical and/or have substantially the same thickness.

Abstract: A handle/strap device is disclosed that is suitable for original or retrofit installation onto edge surfaces of portable devices such as notebook computers and portable DVD players and the like. The handle/strap is made up of a base plate to which a pair of complementary upper and lower channel shaped leaf elements are pivotally attached at respective ends thereof. A longitudinal cavity is created in between the folded channel shapes when the device is in the shape of a handle. However, the upper channel can be unlatched from the lower channel so as to release the extendable/adjustable strap contained therein.