Patents by Inventor Sung-Eui Kim
Sung-Eui Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11932618Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.Type: GrantFiled: March 13, 2023Date of Patent: March 19, 2024Assignee: ILDONG PHARMACEUTICAL CO., LTD.Inventors: Hong Chul Yoon, Kyung Mi An, Myong Jae Lee, Jin Hee Lee, Jeong-geun Kim, A-rang Im, Woo Jin Jeon, Jin Ah Jeong, Jaeho Heo, Changhee Hong, Kyeojin Kim, Jung-Eun Park, Te-ik Sohn, Changmok Oh, Da Hae Hong, Sung Wook Kwon, Jung Ho Kim, Jae Eui Shin, Yeongran Yoo, Min Whan Chang, Eun Hye Jang, In-gyu Je, Ji Hye Choi, Gunhee Kim, Yearin Jun
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Patent number: 10037999Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.Type: GrantFiled: January 7, 2015Date of Patent: July 31, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-ik Kim, Hyoung-sub Kim, Sung-eui Kim, Hoon Jeong
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Patent number: 9613966Abstract: A semiconductor device includes a semiconductor substrate including a plurality of active areas, a bit line crossing the plurality of active areas, a direct contact connecting a first active area of the plurality of active areas with the bit line, an insulating spacer covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate, a contact pad connected with a side wall of a second active area of the plurality of active areas, which neighbors the first active area, a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad, and a buried contact connected with the contact pad and filling the contact hole.Type: GrantFiled: April 28, 2015Date of Patent: April 4, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-ik Kim, Hyoung-sub Kim, Sung-eui Kim
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Patent number: 9431476Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.Type: GrantFiled: March 31, 2016Date of Patent: August 30, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Seung Cho, Sung-Eui Kim, Ji-Young Kim, Hoon Jeong, Chan-Won Kim, Jong-Bom Seo, Seung-Jun Lee, Jun-Soo Lee
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Publication number: 20160225845Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.Type: ApplicationFiled: March 31, 2016Publication date: August 4, 2016Inventors: Young-Seung Cho, Sung-Eui Kim, Ji-Young Kim, Hoon Jeong, Chan-Won Kim, Jong-Bom Seo, Seung-Jun Lee, Jun-Soo Lee
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Patent number: 9349633Abstract: A method of manufacturing a semiconductor device includes forming an isolation layer on a substrate, where an active pattern is defined, forming an insulating interlayer on the active pattern of the substrate and the isolation layer, removing portions of the insulating interlayer, the active pattern and the isolation layer to form a first recess, forming a first contact in the first recess on a first region of the active pattern exposed by the first recess, removing portions of the active pattern and the isolation layer in the first recess by performing an isotropic etching process, to form an enlarged first recess, and filling the enlarged first recess to form a first spacer that surrounds a sidewall of the first contact.Type: GrantFiled: December 8, 2014Date of Patent: May 24, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Ik Kim, Sung-Eui Kim, Hyoung-Sub Kim, Sung-Kwan Choi
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Patent number: 9330960Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.Type: GrantFiled: June 5, 2014Date of Patent: May 3, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Seung Cho, Sung-Eui Kim, Ji-Young Kim, Hoon Jeong, Chan-Won Kim, Jong-Bom Seo, Seung-Jun Lee, Jun-Soo Lee
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Publication number: 20150380508Abstract: A semiconductor device includes a semiconductor substrate including a plurality of active areas, a bit line crossing the plurality of active areas, a direct contact connecting a first active area of the plurality of active areas with the bit line, an insulating spacer covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate, a contact pad connected with a side wall of a second active area of the plurality of active areas, which neighbors the first active area, a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad, and a buried contact connected with the contact pad and filling the contact hole.Type: ApplicationFiled: April 28, 2015Publication date: December 31, 2015Inventors: Dae-ik KIM, Hyoung-sub KIM, Sung-eui KIM
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Publication number: 20150214146Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.Type: ApplicationFiled: January 7, 2015Publication date: July 30, 2015Inventors: Dae-ik KIM, Hyoung-sub KIM, Sung-eui KIM, Hoon JEONG
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Publication number: 20150162335Abstract: A method of manufacturing a semiconductor device includes forming an isolation layer on a substrate, where an active pattern is defined, forming an insulating interlayer on the active pattern of the substrate and the isolation layer, removing portions of the insulating interlayer, the active pattern and the isolation layer to form a first recess, forming a first contact in the first recess on a first region of the active pattern exposed by the first recess, removing portions of the active pattern and the isolation layer in the first recess by performing an isotropic etching process, to form an enlarged first recess, and filling the enlarged first recess to form a first spacer that surrounds a sidewall of the first contact.Type: ApplicationFiled: December 8, 2014Publication date: June 11, 2015Inventors: Dae-Ik KIM, Sung-Eui KIM, Hyoung-Sub KIM, Sung-Kwan CHOI
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Publication number: 20140361403Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.Type: ApplicationFiled: June 5, 2014Publication date: December 11, 2014Inventors: Young-Seung Cho, Sung-Eui Kim, Ji-Young Kim, Hoon Jeong, Chan-Won Kim, Jong-Bom Seo, Seung-Jun Lee, Jun-Soo Lee
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Patent number: 7714325Abstract: A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposition (CVD) layer is then formed on the thin thermal oxide layer, creating a required thickness. The thin thermal oxide layer and the CVD material layer are formed in the same CVD apparatus. As a result, a process can be simplified and a particle-leading pollution can be prevented.Type: GrantFiled: May 14, 2007Date of Patent: May 11, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Do-Hyung Kim, Sung-Eui Kim
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Patent number: 7387943Abstract: A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposition (CVD) layer is then formed on the thin thermal oxide layer, creating a required thickness. The thin thermal oxide layer and the CVD material layer are formed in the same CVD apparatus. As a result, a process can be simplified and a particle-leading pollution can be prevented.Type: GrantFiled: February 25, 2002Date of Patent: June 17, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Do-Hyung Kim, Sung-Eui Kim
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Publication number: 20080017908Abstract: Exemplary embodiments relate to a semiconductor memory device and method of fabricating the same. The semiconductor member device may include a semiconductor substrate, a plurality of storage node contact plugs formed above the semiconductor substrate, and a plurality of storage node electrodes, each of the plurality of storage node electrodes may be located respectively above each of the plurality of storage node contact plugs. Each of the storage node electrodes may include a cylindrical body and a generally Y-shaped connection portion extending from the cylindrical body and interfacing the storage node contact plugs.Type: ApplicationFiled: July 17, 2007Publication date: January 24, 2008Inventors: Min-hee Cho, Sung-eui Kim, Won-tae Hwang, Jin-hye Bae
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Publication number: 20070210305Abstract: A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposition (CVD) layer is then formed on the thin thermal oxide layer, creating a required thickness. The thin thermal oxide layer and the CVD material layer are formed in the same CVD apparatus. As a result, a process can be simplified and a particle-leading pollution can be prevented.Type: ApplicationFiled: May 14, 2007Publication date: September 13, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Do-Hyung KIM, Sung-Eui KIM
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Patent number: 6914316Abstract: A trench structure of a semiconductor device includes first and second regions of a substrate having first and second trenches, respectively, the first trench having an aspect ratio larger than that of the second trench, a first insulation material on a bottom and sidewalls of the first trench forming a first sub-trench in the first trench, a second insulation material completely filling the first sub-trench, a third insulation material formed on a bottom and sidewalls of the second trench forming a second sub-trench in the second trench, a fourth insulation material formed on a bottom and sidewalls of the second sub-trench, and a fifth insulation material completely filling a third sub-trench formed in the second sub-trench by the fourth insulation material.Type: GrantFiled: July 14, 2003Date of Patent: July 5, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Jung Yun, Sung-Eui Kim
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Patent number: 6893982Abstract: A method for forming a thin film on a gate electrode reduces oxidation of the gate electrode during a re-oxidation process to fix the damage to the gate oxide film caused during the formation of the gate electrode pattern. The gate electrode pattern formed in this manner will have reduced defects after re-oxidation. After a gate oxide film is formed on a substrate, a gate electrode pattern is formed on the gate oxide film through an etching process. A thin film that includes nitride is then continuously formed on the gate oxide film and on the gate electrode by utilizing a deposition rate difference between the thin film on the gate oxide film and on the thin film forming the gate electrode. Because of the thin film formed on the gate electrode, oxidation of the gate electrode is reduced during the re-oxidation of the gate oxide film.Type: GrantFiled: January 7, 2003Date of Patent: May 17, 2005Assignee: Samsung Electronics Co., Ltd.Inventor: Sung-Eui Kim
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Patent number: 6794263Abstract: A method of inhibiting pit occurrence on a semiconductor substrate during manufacture of a semiconductor device includes forming an isolation using a shallow trench isolation (STI) method in a semiconductor substrate, forming an insulation layer on an entire surface of the semiconductor substrate having the isolation, implanting ions into the semiconductor substrate using the insulation layer as a buffer layer, annealing the semiconductor substrate using a rapid thermal annealing (RTA) process, forming a photoresist layer on the insulation layer and then forming an opening in the photoresist layer to expose an underlayer thereof, forming an align key by etching the underlayer at the opening, and removing the photoresist layer and the insulation layer. Alternatively, the thickness of the insulation layer may be reduced to prevent the occurrence of pits on active areas of the semiconductor substrate.Type: GrantFiled: February 19, 2003Date of Patent: September 21, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Kong-Soo Lee, Young-Wook Park, Jae-Jong Han, Gi-Hyun Hwang, Kyoung-Seok Kim, Sung-Eui Kim, Seung-Mok Shin
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Patent number: 6723662Abstract: Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with a reduced amount of chloride are disclosed. A gate oxide film is formed on a substrate on an active region adjacent to a trench isolation region in a first gas atmosphere with a first amount of chloride. The gate oxide film is annealed in a second gas atmosphere including a second amount of chloride that is greater than the first amount.Type: GrantFiled: July 30, 2003Date of Patent: April 20, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Kong-soo Lee, Jae-jong Han, Sung-eui Kim
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Patent number: 6717231Abstract: Methods of forming trench isolation regions include the steps of forming a semiconductor substrate having a trench therein and a masking layer thereon extending adjacent the trench. The masking layer may comprise silicon nitride. A recess-inhibiting layer is then formed on a sidewall of the trench and on a sidewall of the masking layer. Next, a stress-relief layer is formed on the recess-inhibiting layer. This stress-relief layer extends opposite the sidewall of the trench and opposite the sidewall of the masking layer and may comprise silicon nitride. The trench is then filled with a trench isolation layer. A sequence of planarization or etch-back steps are then performed to remove the masking layer and also align an upper surface of the trench isolation layer with a surface of the substrate. At least a portion of the masking layer is removed using a first etchant (e.g.Type: GrantFiled: August 20, 2002Date of Patent: April 6, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-eui Kim, Keum-joo Lee, In-seak Hwang, Young-sun Koh, Dong-ho Ahn, Moon-han Park, Tai-su Park