Patents by Inventor Sung-Feng Yeh

Sung-Feng Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11916012
    Abstract: A manufacturing method of a semiconductor structure is provided. A first semiconductor die includes a first semiconductor substrate, a first interconnect structure formed thereon, a first bonding conductor formed thereon, and a conductive via extending from the first interconnect structure toward a back surface of the first semiconductor substrate. The first semiconductor substrate is thinned to accessibly expose the conductive via to form a through semiconductor via (TSV). A second semiconductor die is bonded to the first semiconductor die. The second semiconductor die includes a second semiconductor substrate including an active surface facing the back surface of the first semiconductor substrate, a second interconnect structure between the second and the first semiconductor substrates, and a second bonding conductor between the second interconnect structure and the first semiconductor substrate and bonded to the TSV.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Patent number: 11916031
    Abstract: A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chia Hu, Ching-Pin Yuan, Sung-Feng Yeh, Sen-Bor Jan, Ming-Fa Chen
  • Publication number: 20240055371
    Abstract: Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.
    Type: Application
    Filed: January 9, 2023
    Publication date: February 15, 2024
    Inventors: Der-Chyang Yeh, Kuo-Chiang Ting, Yu-Hsiung Wang, Chao-Wen Shih, Sung-Feng Yeh, Ta Hao Sung, Cheng-Wei Huang, Yen-Ping Wang, Chang-Wen Huang, Sheng-Ta Lin, Li-Cheng Hu, Gao-Long Wu
  • Publication number: 20240047417
    Abstract: A method includes attaching a first die and a second die to a first wafer, the first wafer comprising: a first carrier substrate; and a first interconnect structure comprising first dielectric layers and first conductive features embedded in the first dielectric layers; attaching a third die to the first die and a fourth die to the second die; attaching a second wafer to the third die and the fourth die, the second wafer comprising: a second carrier substrate; and a second interconnect structure comprising second dielectric layers and second conductive features embedded in the second dielectric layers; removing the first carrier substrate; patterning the first dielectric layers to expose conductive features of the first die and the second die; and forming external connectors through the first dielectric layers, the external connectors being electrically connected to corresponding ones of the conductive features of the first die and the second die.
    Type: Application
    Filed: August 5, 2022
    Publication date: February 8, 2024
    Inventors: Der-Chyang Yeh, Sung-Feng Yeh, Jian-Wei Hong
  • Publication number: 20240047422
    Abstract: A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.
    Type: Application
    Filed: October 22, 2023
    Publication date: February 8, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Sung-Feng Yeh
  • Patent number: 11894309
    Abstract: A method of forming semiconductor structure includes attaching backsides of top dies to a front side of a bottom wafer, the bottom wafer comprising a plurality of bottom dies; forming first conductive pillars on the front side of the bottom wafer adjacent to the top dies; forming a first dielectric material on the front side of the bottom wafer around the top dies and around the first conductive pillars; and dicing the bottom wafer to form a plurality of structures, each of the plurality of structures comprising at least one of the top dies and at least one of the bottom dies.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Tzuan-Horng Liu, Ming-Fa Chen, Chao-Wen Shih, Sung-Feng Yeh
  • Publication number: 20240030186
    Abstract: A manufacturing method of a package is provided. The method includes the following steps. A wafer substrate having first bonding pads is provided. A die is placed on the wafer substrate, wherein the die comprises second bonding pads bonded to the first bonding pads. The die is encapsulated by an etch stop layer and a first encapsulant. A redistribution structure is disposed over the die, the etch stop layer and the first encapsulant. A portion of the redistribution structure is removed to expose the first encapsulant. The first encapsulant is removed to expose the etch stop layer. A dielectric structure is disposed over the exposed etch stop layer and laterally encapsulates the die and the redistribution structure.
    Type: Application
    Filed: July 25, 2022
    Publication date: January 25, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Der-Chyang Yeh, Sung-Feng Yeh, Jian-Wei Hong
  • Publication number: 20240021576
    Abstract: A method includes bonding a tier-1 device die to a carrier, forming a first gap-filling region to encapsulate the tier-1 device die, forming a first redistribution structure over and electrically connected to the tier-1 device die, and bonding a tier-2 device die to the tier-1 device die. The tier-2 device die is over the tier-1 device die, and the tier-2 device die extends laterally beyond a corresponding edge of the tier-1 device die. The method further includes forming a second gap-filling region to encapsulate the tier-2 device die, removing the carrier, and forming a through-dielectric via penetrating through the first gap-filling region. The through-dielectric via is overlapped by, and is electrically connected to, the tier-2 device die. A second redistribution structure is formed, wherein the first redistribution structure and the second redistribution structure are on opposing sides of the tier-1 device die.
    Type: Application
    Filed: August 6, 2023
    Publication date: January 18, 2024
    Inventors: Ming-Fa Chen, Chuan-An Cheng, Sung-Feng Yeh, Chih-Chia Hu
  • Publication number: 20240021584
    Abstract: A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die.
    Type: Application
    Filed: August 1, 2023
    Publication date: January 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Min-Chien Hsiao, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu
  • Patent number: 11856800
    Abstract: A semiconductor device and method of manufacture are provided wherein the semiconductor device includes a first system on chip device bonded to a first memory device, a second system on chip device bonded to the first memory device, a first encapsulant surrounding the first system on chip device and the second system on chip device, a second encapsulant surrounding the first system on chip device, the second system on chip device, and the first memory device, and a through via extending from a first side of the second encapsulant to a second side of the first encapsulant, the through via being located outside of the first encapsulant.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Hsien-Wei Chen, Wen-Chih Chiou, Ming-Fa Chen, Sung-Feng Yeh
  • Patent number: 11854921
    Abstract: A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen, Hsien-Wei Chen, Tzuan-Horng Liu
  • Patent number: 11854785
    Abstract: A package structure and method of manufacturing is provided, whereby heat dissipating features are provided for heat dissipation. Heat dissipating features include conductive vias formed in a die stack, thermal chips, and thermal metal bulk, which can be bonded to a wafer level device. Hybrid bonding including chip to chip, chip to wafer, and wafer to wafer provides thermal conductivity without having to traverse a bonding material, such as a eutectic material. Plasma dicing the package structure can provide a smooth sidewall profile for interfacing with a thermal interface material.
    Type: Grant
    Filed: June 13, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen
  • Patent number: 11855042
    Abstract: A method of manufacturing a semiconductor structure includes following operations. A substrate is provided. A first die is disposed over the substrate. A second die is provided. The second die includes a via extended within the second die. The second die is disposed over the substrate. A molding is formed around the first die and second die. An interconnect structure is formed. The interconnect structure includes a dielectric layer and a conductive member. The dielectric layer is disposed over the molding, the first die and the second die. The conductive member is surrounded by the dielectric layer. The via is formed by removing a portion of the second die to form a recess extended within the second die and disposing a conductive material into the recess.
    Type: Grant
    Filed: March 16, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ming-Fa Chen, Wen-Chih Chiou, Sung-Feng Yeh
  • Patent number: 11848246
    Abstract: In an embodiment, a device includes: an interposer; a first integrated circuit device attached to the interposer; a second integrated circuit device attached to the interposer adjacent the first integrated circuit device; a heat dissipation die on the second integrated circuit device; and an encapsulant around the heat dissipation die, the second integrated circuit device, and the first integrated circuit device, a top surface of the encapsulant being coplanar with a top surface of the heat dissipation die and a top surface of the first integrated circuit device.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: December 19, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Sung-Feng Yeh
  • Patent number: 11837578
    Abstract: A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: December 5, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Sung-Feng Yeh
  • Publication number: 20230387082
    Abstract: A package includes a first device die, and a second device die bonded to the first device die through hybrid bonding. The second device die is larger than the first device die. A first isolation region encapsulates the first device die therein. The first device die, the second device die, and the first isolation region form parts of a first package. A third device die is bonded to the first package through hybrid bonding. The third device die is larger than the first package. A second isolation region encapsulates the first package therein. The first package, the third device die, and the second isolation region form parts of a second package.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 30, 2023
    Inventors: Chen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen
  • Publication number: 20230378131
    Abstract: A structure including stacked substrates, a first semiconductor die, a second semiconductor die, and an insulating encapsulation is provided. The first semiconductor die is disposed over the stacked substrates. The second semiconductor die is stacked over the first semiconductor die. The insulating encapsulation includes a first encapsulation portion encapsulating the first semiconductor die and a second encapsulation portion encapsulating the second semiconductor die.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20230378015
    Abstract: In an embodiment, a device includes: an interposer; a first integrated circuit device attached to the interposer; a second integrated circuit device attached to the interposer adjacent the first integrated circuit device; a heat dissipation die on the second integrated circuit device; and an encapsulant around the heat dissipation die, the second integrated circuit device, and the first integrated circuit device, a top surface of the encapsulant being coplanar with a top surface of the heat dissipation die and a top surface of the first integrated circuit device.
    Type: Application
    Filed: August 1, 2023
    Publication date: November 23, 2023
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Sung-Feng Yeh
  • Publication number: 20230378012
    Abstract: In an embodiment, a device includes: a first integrated circuit die; a second integrated circuit die; a gap-fill dielectric between a first sidewall of the first integrated circuit die and a second sidewall of the second integrated circuit die; a protective cap overlapping the gap-fill dielectric, the first sidewall of the first integrated circuit die, and the second sidewall of the second integrated circuit die; and an isolation layer around the protective cap, the isolation layer disposed on the first integrated circuit die, and the second integrated circuit die.
    Type: Application
    Filed: August 26, 2022
    Publication date: November 23, 2023
    Inventors: Der-Chyang Yeh, Chao-Wen Shih, Sung-Feng Yeh, Ta Hao Sung, Min-Chien Hsiao, Chun-Chiang Kuo, Tsung-Shu Lin
  • Publication number: 20230369262
    Abstract: A package includes a first die that includes a first metallization layer, one or more first bond pad vias on the first metallization layer, wherein a first barrier layer extends across the first metallization layer between each first bond pad via and the first metallization layer, and one or more first bond pads on the one or more first bond pad vias, wherein a second barrier layer extends across each first bond pad via between a first bond pad and the first bond pad via, and a second die including one or more second bond pads, wherein a second bond pad is bonded to a first bond pad of the first die.
    Type: Application
    Filed: July 24, 2023
    Publication date: November 16, 2023
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Hsien-Wei Chen, Jie Chen