Abstract: Methods of fabricating a semiconductor device having low-voltage MOS transistors and high-voltage metal-oxide semiconductor (“MOS”) transistors are provided. The method includes forming a device isolation layer at a predetermined region of a semiconductor substrate. The device isolation layer defines first and second active regions in low and high-voltage MOS transistor regions, respectively. A capping layer pattern is formed to cover the low-voltage MOS transistor region. The capping layer pattern exposes the second active region in the high-voltage MOS transistor region. A first gate oxide layer is formed on an entire surface of the semiconductor substrate having the capping layer pattern. The first gate oxide layer is formed using a chemical vapor deposition (“CVD”) technique. The first gate oxide layer serves as a gate insulating layer of the high-voltage MOS transistor.

Abstract: A method of forming a shallow trench isolation of a semiconductor device, includes providing a semiconductor substrate including field and active regions; forming a first insulating layer and a mask layer on the active region that expose the field region; etching the exposed field region to form a shallow trench; etching a portion of the mask layer to recess the mask layer a predetermined distance from an edge of the trench; forming a second insulating layer in the trench, the second insulating layer having a step higher than the active region; forming a liner layer as covering the mask layer and the second insulating layer; forming a third insulating layer as covering the liner layer and filling the trench; etching the mask, liner and third insulating layers to provide a planarized surface; removing the remaining mask layer; and removing the remaining first insulating layer.

Abstract: A bag equipped with a bottom case, which is comprised of a bottom plate and a side peripheral wall and is integrally provided at its inner or outer surface with handle holding members and at its outer surface with caster mounting members, and which is coupled to an upper case made of fabric material or synthetic resin, is disclosed. The bottom case is detachably coupled to an upper case to allow only one case of both cases to be separated from the other case and to be cleaned or replaced with a new one. The bottom case is provided at its side wall with a reinforcing frame to prevent the side wall from being squeezed or broken. The bottom case is provided with handle mounting members to be integrally formed thereto or to be separated therefrom so as to diversify design and appearance of the bag.

Abstract: A bag equipped with a bottom case, which is comprised of a bottom plate and a side peripheral wall and is integrally provided at its inner or outer surface with handle holding members and at its outer surface with caster mounting members, and which is coupled to an upper case made of fabric material or synthetic resin, is disclosed. The bottom case is detachably coupled to an upper case to allow only one case of both cases to be separated from the other case and to be cleaned or replaced with a new one. The bottom case is provided at its side wall with a reinforcing frame to prevent the side wall from being squeezed or broken. The bottom case is provided with handle mounting members to be integrally formed thereto or to be separated therefrom so as to diversify design and appearance of the bag.

Abstract: Methods of fabricating a semiconductor device having low-voltage MOS transistors and high-voltage metal-oxide semiconductor (“MOS”) transistors are provided. The method includes forming a device isolation layer at a predetermined region of a semiconductor substrate. The device isolation layer defines first and second active regions in low and high-voltage MOS transistor regions, respectively. A capping layer pattern is formed to cover the low-voltage MOS transistor region. The capping layer pattern exposes the second active region in the high-voltage MOS transistor region. A first gate oxide layer is formed on an entire surface of the semiconductor substrate having the capping layer pattern. The first gate oxide layer is formed using a chemical vapor deposition (“CVD”) technique. The first gate oxide layer serves as a gate insulating layer of the high-voltage MOS transistor.

Abstract: A method of forming a shallow trench isolation of a semiconductor device, includes providing a semiconductor substrate including field and active regions; forming a first insulating layer and a mask layer on the active region that expose the field region; etching the exposed field region to form a shallow trench; etching a portion of the mask layer to recess the mask layer a predetermined distance from an edge of the trench; forming a second insulating layer in the trench, the second insulating layer having a step higher than the active region; forming a liner layer as covering the mask layer and the second insulating layer; forming a third insulating layer as covering the liner layer and filling the trench; etching the mask, liner and third insulating layers to provide a planarized surface; removing the remaining mask layer; and removing the remaining first insulating layer.

Abstract: A method of manufacturing a semiconductor device having a shallow trench isolation includes steps of forming a mask layer on a semiconductor substrate, forming a shallow trench in a semiconductor substrate using the mask layer, forming at least one step in the semiconductor substrate at the top of the shallow trench, and then forming a liner layer over the entire surface of the semiconductor substrate so as to line the shallow trench and thereby offer protection during subsequent oxidation. When the mask layer is subsequently removed, the at least one step in the semiconductor substrate allows portions of the liner layer extending outside the shallow trench to be removed without creating problematic dents in the structure.

Abstract: A capacitor of a semiconductor memory device includes a substrate having a cell pad exposed through a buried contact hole of an interlayer insulating layer; a storage electrode having a bar pattern formed on the interlayer insulating layer for making an electrical connection with the cell pad through the buried contact hole and conductive spacers formed on the side walls of the bar pattern; a dielectric layer formed on the storage electrode; and a plate electrode formed on the storage electrodes with the dielectric layer being between the storage electrode (including the spacers) and the plate electrode.

Abstract: Disclosed herein is a bag body for bowling bags. The bag body includes an elongated body member that is provided with a cavity and side open ends. Two lids are hinged to the body member at the side open ends of the body member to selectively open and close the side open ends, and provided with an exterior pouch. A partition is formed in the center portion of the cavity of the body member to divide the cavity into two sub-cavities. The partition may be pectinate and integrated with the body member into a single structure. The bag body may further comprise a cover made of synthetic resin of leather, the cover being provided with an auxiliary pouch and secured to the front portion of the body member by means of bars and bolts.

Abstract: A shallow trench isolation (STI) structure is constructed in dual gate oxide device that requires a high voltage and low-voltage operation, for example in a LCD driver IC. The disclosed fabrication method prevents deterioration in operational characteristics of resulting transistors and prevents decrease in the reliability of the gate oxide film.

Abstract: A bowling ball carrier, carrying two or three bags loaded with a plurality of bowling balls and allowing a user to easily receive or remove bowling balls into or from the bags, is disclosed. The bowling ball carrier has two parallel telescopic columns and a wheeled bag integrated with the lower ends of the telescopic columns. An upper bag holder frame, used for removably holding one or two bags in addition to the wheeled bag on the carrier, is attached to the carrier. The holder frame selectively engages with a locking beam of the two telescopic columns at its upper part. The wheeled bag may lie on its side. In such a case, the bag has a front opening capable of allowing a user to receive or remove bowling balls into or from the bag at the front of the bag. Alternatively, the wheeled bag may stand on its bottom. In such a case, the bag has a top opening capable of allowing a user to receive or remove bowling balls into or from the bag at the top of the bag.

Abstract: A bottom case for bowling bags is disclosed. One or two partition walls are integrally formed in the bottom case, thus forming one, two or three cells in said case. The cells are for separately receiving the bowling balls in the case. A dish-shaped shell is integrally and interiorly formed on the bottom wall at a position inside each of the cells and stably seats a bowling ball in each cell. Two corner supports are integrally formed along the rear corners of the rear cell, thus supporting a bowling ball seated in the rear cell. The bottom case is integrated with a cloth or synthetic leather bag body. A bowling shoes bag is separately provided on the top of the bag body. The bottom case is also integrated with an auxiliary bag at the sidewall, thus receiving bowling accessories, such as towels, protectors and packed bowling powder. The bottom case of this invention thus allows a bowling bag to receive and carry one, two or three bowling balls along with such bowling accessories at the same time.

Abstract: A bowling ball carrier, carrying a plurality of bowling balls at the same time and allowing a user to receive or take bowling balls into or out of bowling ball bags and being selectively used as a travelling carrier, is disclosed. The bowling ball carrier has a telescopic handle frame and an integrated bag provided on the lower end of the handle frame by attaching the bottom part of the integrated bag to the lower end of the handle frame. A support block is placed in the bottom part of the bag. Both side walls of the support block are rounded inwardly at the same radius of gyration as a bowling ball thus forming bow side surfaces. An upper bag holder frame is attached to the handle frame at a position above the integrated bag and is supported by the support block.