Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: A method for managing biometric information is provided. The method includes the steps of: determining whether a cardiac disorder event has occurred to a user on the basis of biometric information measured from the user's body and situation information associated with the biometric information; providing alarm information associated with the cardiac disorder event to the user in response to determining that the cardiac disorder event has occurred; and associating a time point of occurrence of the cardiac disorder event with feedback information acquired from the user in response to the provided alarm information.

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to an encapsulation layer for a semiconductor device having a chalcogenide material, and methods of forming the same. In one aspect, a method of fabricating a semiconductor device comprises providing a substrate having an exposed surface comprising a chalcogenide material. The method additionally comprises forming a low-electronegativity (low-?) metal oxide layer on the chalcogenide material by cyclically exposing the substrate to a low-? metal precursor and an oxygen precursor comprising O2, wherein the low-? metal of the metal precursor has an electronegativity of 1.6 or lower.

Abstract: The present invention relates to a method for exhausting high concentrations of toxic gases generated during chemical stripping for high-temperature parts of a gas turbine, the method including the steps of: allowing a pair of openable/closable doors mounted on top of a tank whose top is open to accommodate a chemical substance therein to be closed during the chemical stripping so as to close top of the tank; collecting the toxic gases generated from the interior of the tank through hoods located at the inside of the tank; and exhausting the toxic gases to the outside through exhaust pipes mounted on the hoods or collecting the toxic gases to a separate storage tank.

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a N precursor at a N precursor flow rate, wherein a ratio of the N precursor flow rate to the Ti precursor flow rate exceeds 3.

Abstract: Provided are a lithium primary battery in which a structure of an electrode closely related to output characteristics of the battery is improved to expand a reaction area, thus improving the output characteristics of the battery, and a method for manufacturing the lithium primary battery.

Abstract: The present invention relates to a method for exhausting high concentrations of toxic gases generated during chemical stripping for high-temperature parts of a gas turbine, the method including the steps of: allowing a pair of openable/closable doors mounted on top of a tank whose top is open to accommodate a chemical substance therein to be closed during the chemical stripping so as to close top of the tank; collecting the toxic gases generated from the interior of the tank through hoods located at the inside of the tank; and exhausting the toxic gases to the outside through exhaust pipes mounted on the hoods or collecting the toxic gases to a separate storage tank.

Abstract: A method for estimating arrhythmia comprises analyzing a target biosignal of a subject using a first artificial neural network based on binary classification and trained on data regarding biosignals corresponding to a first type of arrhythmic state, and a second artificial neural network based on binary classification and trained on data regarding biosignals corresponding to a second type of arrhythmic state, thereby calculating a first score for whether at least a part of the target biosignal corresponds to the first type of arrhythmic state, and a second score for whether at least a part of the target biosignal corresponds to the second type of arrhythmic state, respectively; and estimating types of arrhythmic state to which at least a part of the target biosignal corresponds, on the basis of the scores and a training index of each of a plurality of artificial neural networks including the first and second artificial neural networks.

Abstract: The disclosure relates to a flexible active species generator comprising: a first electrode of a conductive metal thin film; a second electrode of a ground electrode; a flexible dielectric layer of an insulator formed between the first electrode and the second electrode; and a plasma resistant functional layer formed between the dielectric layer and the second electrode, wherein the first electrode and the second electrode are electrically connected to an external power supply to generate an atmospheric pressure plasma to generate active species. The flexible active species generator has a plasma resistant function to prevent deformation and decomposition of an insulator caused by the plasma as well as an active species generating function from atmospheric pressure plasma, and has durability and safety, which is thus applicable to articles, foods, garments and human body in various forms.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: Earphones comprise a first earphone for collecting a first biosignal and a second earphone for collecting a second biosignal. The second earphone is wirelessly connected to the first earphone and configured to quantize the second biosignal into a second digital signal and transmit the second digital signal to the first earphone together with a set of marker bits representing a time at which the second biosignal is collected. The first earphone includes a biosignal processor configured to quantize the first biosignal into a first digital signal and synchronize the first and second digital signals with reference to the set of marker bits to generate an electrocardiogram (ECG) signal; and a transmitter configured to transmit the ECG signal to a digital device wirelessly connected to the first earphone.

Abstract: A method for preparing a three-dimensional graphene structure, and an energy storage device are provided, the method including forming a graphene precursor by heating a carbohydrate and a gas generator, forming a graphene structure having a cavity therein by carbonizing the graphene precursor, and forming nanopores in the graphene structure, wherein the nanopores pass through an outer surface and an inner surface of the graphene structure, and are connected with the cavity.

Abstract: A technology for implementing a finer button click of a device including an LRA by reducing the falling time of an LRA after a click is implemented by controlling an input signal applied to the LRA depending on an operating characteristic of the LRA. A user's operational convenience can be improved by omitting a real button positioned in the front part of a mobile phone, and more smooth display watching and manipulation are made possible by increasing the size of a display. Furthermore, the button click of a device including an LRA can be realistically implemented by controlling only the frequency of an input signal without adding a separate device or a control circuit to the LRA.

Abstract: The present invention relates to a biometric authentication apparatus and a biometric authentication method. In the present invention, provided is the authentication apparatus and authentication method of, while placing an object for biometric authentication on a space between a first electrode and a second electrode, applying a square wave with a single period to the first electrode and performing biometric authentication using a measurement voltage width, which is a difference between a maximum value (a maximum measurement voltage value) and a minimum value (a minimum measurement voltage value) of voltage measured at the first electrode, and an arriving time required for the voltage measured at the first electrode to reach a particular range of the maximum measurement voltage value from the minimum measurement voltage value. The biometric authentication apparatus and method according to the present invention possibly provide a human body detect function for personal authentication with high reliability.

Abstract: A method performed by a user equipment (UE) in a wireless communication system, includes triggering a first power headroom report (PHR), wherein a first PHR media access control (MAC) control element (CE) is not transmitted when first uplink (UL) resources cannot accommodate the first PHR MAC CE plus its subheader, triggering a second PHR, determining whether at least one PHR has been triggered and not cancelled and transmitting a second PHR MAC CE when it is determined that the at least one PHR has been triggered and not cancelled, and when second UL resources can accommodate the second PHR MAC CE plus its subheader.