Abstract: A method for managing biosignal data is provided. The method includes the steps of: generating an encryption key for encrypting biosignal data associated with a second device, with reference to first public information determined on the basis of secret information of a first device, and secret information of the second device; and providing second public information determined on the basis of the secret information of the second device, and the biosignal data encrypted on the basis of the encryption key to the first device.

Abstract: A method for managing biometric information is provided. The method includes the steps of: determining whether a cardiac disorder event has occurred to a user on the basis of biometric information measured from the user's body and situation information associated with the biometric information; providing alarm information associated with the cardiac disorder event to the user in response to determining that the cardiac disorder event has occurred; and associating a time point of occurrence of the cardiac disorder event with feedback information acquired from the user in response to the provided alarm information.

Abstract: A method and system for training a self-converging generative network are disclosed. A method for training a self-converging generative network according to one embodiment of the present invention comprises the steps of: pairwise-mapping training images and latent space vectors constituting a training data set; defining a loss function for a generator of the self-converging generative network and a loss function for a latent space; and training weights and latent vectors of the self-converging generative network using the loss function for the generator and the loss function for the latent space.

Abstract: Disclosed herein is an in-mold electronics (IME) structure. The IME structure includes a film, a first plastic resin positioned under the film, and a second plastic resin positioned under the first plastic resin. An electronic circuit is formed on a top or bottom surface of the second plastic resin by a plating method and also electronic elements are mounted thereon. The electronic elements include LED light sources, a plurality of protruding light guides configured to guide lighting through distribution and direction is formed on the top surface of the second plastic resin, and the LED light sources are installed in respective spaces provided by the light guides.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: A method for monitoring biosignals using a wearable device is provided. The method includes the steps of: acquiring information on a result of performing a primary analysis of a biosignal measured by the device, using a primary analysis model trained to perform a primary analysis for detecting abnormal events from biosignals, and acquiring, from the biosignal, a partial biosignal associated with the result of performing the primary analysis; and performing a secondary analysis of the partial biosignal with reference to the information on the result of performing the primary analysis, using a secondary analysis model trained to perform a secondary analysis for detecting abnormal events from biosignals, wherein the primary analysis model is a relatively light-weighted model compared to the secondary analysis model.

Abstract: The present disclosure relates to an air conditioning system and method for disinfection of a public facility. More specifically, the present disclosure relates to an air conditioning system and method for disinfection of a public facility capable of sterilizing or inactivating bio-aerosols existing in interior space by using the air conditioning equipment installed in the public facility structures.

Abstract: The present invention relates to a biometric and fingerprint recognition sensor structure and an electronic card using the same. The present invention discloses a biometric and fingerprint recognition sensor structure comprising: a fingerprint sensing electrode array comprising a plurality of fingerprint sensing electrodes and a biometric authentication electrodes formed to be electrically spaced apart along the outer edge of the fingerprint sensing electrode array. Conventionally, the electrode for biometric authentication has to be formed through a separate process from the fingerprint sensing electrode, but the biometric and fingerprint recognition sensor structure and the electronic card using the same according to the present invention can be formed through the same process as the fingerprint sensing electrode according to an appropriate design.

Abstract: The present invention relates to a USB secure data storage device, a system for authenticating the same, and an authentication method. In the present invention, an external memory identifier is extracted from an external memory, a second authentication key corresponding to the external memory identifier is extracted from the mapping information using the extracted external memory identifier, and encrypted using the second authentication key. A USB security data storage device having a USB security data storage device and authenticating it, comprising a controller for writing data to the external memory or decrypting it using the second authentication key to read the data recorded in the external memory A system and an authentication method are disclosed.

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: A system for resistance spot welding control and a method thereof are disclosed. A system for regulating welding parameters of a spot welding machine joining a plurality of panels according to an aspect of the present disclosure includes an ultrasonic sensor installed inside an electrode of a welding gun, applying a ultrasonic wave to a welding part of the panel, and detecting a reflected ultrasonic signal; an ultrasonic analyzer capable of creating ultrasonic analysis information by analyzing in real time the ultrasonic signal; and a welding controller receiving the ultrasonic analysis information from the ultrasonic analyzer, performing adaptive welding control with the welding parameters set based on information of the panel, and compensating in real time one or more welding parameters according to the received ultrasonic analysis information.

Abstract: Disclosed herein is an in-mold electronics (IME) structure. The IME structure includes a film, a first plastic resin positioned under the film, and a second plastic resin positioned under the first plastic resin. An electronic circuit is formed on a top or bottom surface of the second plastic resin by a plating method and also electronic elements are mounted thereon. The electronic elements include LED light sources, a plurality of protruding light guides configured to guide lighting through distribution and direction is formed on the top surface of the second plastic resin, and the LED light sources are installed in respective spaces provided by the light guides.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosure relates to a flexible active species generator comprising: a first electrode of a conductive metal thin film; a second electrode of a ground electrode; a flexible dielectric layer of an insulator formed between the first electrode and the second electrode; and a plasma resistant functional layer formed between the dielectric layer and the second electrode, wherein the first electrode and the second electrode are electrically connected to an external power supply to generate an atmospheric pressure plasma to generate active species. The flexible active species generator has a plasma resistant function to prevent deformation and decomposition of an insulator caused by the plasma as well as an active species generating function from atmospheric pressure plasma, and has durability and safety, which is thus applicable to articles, foods, garments and human body in various forms.

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: A method for managing biometric information is provided. The method includes the steps of: determining whether a cardiac disorder event has occurred to a user on the basis of biometric information measured from the user's body and situation information associated with the biometric information; providing alarm information associated with the cardiac disorder event to the user in response to determining that the cardiac disorder event has occurred; and associating a time point of occurrence of the cardiac disorder event with feedback information acquired from the user in response to the provided alarm information.

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to an encapsulation layer for a semiconductor device having a chalcogenide material, and methods of forming the same. In one aspect, a method of fabricating a semiconductor device comprises providing a substrate having an exposed surface comprising a chalcogenide material. The method additionally comprises forming a low-electronegativity (low-?) metal oxide layer on the chalcogenide material by cyclically exposing the substrate to a low-? metal precursor and an oxygen precursor comprising O2, wherein the low-? metal of the metal precursor has an electronegativity of 1.6 or lower.

Abstract: The present invention relates to a method for exhausting high concentrations of toxic gases generated during chemical stripping for high-temperature parts of a gas turbine, the method including the steps of: allowing a pair of openable/closable doors mounted on top of a tank whose top is open to accommodate a chemical substance therein to be closed during the chemical stripping so as to close top of the tank; collecting the toxic gases generated from the interior of the tank through hoods located at the inside of the tank; and exhausting the toxic gases to the outside through exhaust pipes mounted on the hoods or collecting the toxic gases to a separate storage tank.

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.