Abstract: An apparatus and method of processing a positioning reference signal are disclosed. In some embodiments, the method includes determining a narrow-band (NB) positioning reference signal (PRS) bitmap indicating a pattern selecting NB PRS subframes, wherein each NB PRS subframe comprises an NB PRS for positioning an NB user equipment (UE), transmitting, to the NB UE, NB PRS configuration information for the NB UE, the NB PRS configuration information comprising the NB PRS bitmap, determining, by a reference cell and based on the NB PRS bitmap, NB PRS subframes of the reference cell, mapping, by the reference cell, a first NB PRS in the NB PRS subframes of the reference cell, and receiving, from the NB UE and in response to the first NB PRS, a reference signal time difference (RSTD) measurement.

Abstract: A focusing method of a camera for obtaining an image of a surveillance area by performing a pan-tilt-zoom (PTZ) operation is included. The focusing method includes: determining whether a region of interest set in the surveillance area is included in a first image obtained by the camera; converting a mode according to a result of the determination by selecting a first mode in which focusing is performed using a first focusing algorithm or a second mode in which focusing is performed using a second focusing algorithm that is different from the first focusing algorithm; and focusing the camera with respect to the first image according to the first mode or the second mode.

Abstract: A display device, includes: a display panel including a pixel electrically coupled to a gate line and a data line; a gate driver configured to provide a gate signal to the gate line; and a data driver configured to provide a data signal to the data line, wherein the gate driver is configured to sequentially provide a first gate signal and a second gate signal to the gate line during a first frame period, wherein the data driver is configured to provide a first data signal to the data line in response to the first gate signal, and to provide a second data signal to the data line in response to the second gate signal, and wherein the second data signal is different from the first data signal and varies dependent on the first data signal.

Abstract: Disclosed herein are a decoding method and apparatus and an encoding method and apparatus for deriving an intra-prediction mode. An intra-prediction mode may be derived using a method for deriving an intra-prediction mode based on a neighbor block of the target block, a method for deriving an intra-prediction mode using signaling of the intra-prediction mode of the target block, or a method for deriving an adaptive intra-prediction mode based on the type of a target slice. An MPM list may be used to derive the intra-prediction mode, and a temporal neighbor block or the like may be used to configure the MPM list.

Abstract: The present invention relates to a manufacturing method and a manufacturing apparatus for calcium formate and, more particularly, to a manufacturing method and a manufacturing apparatus for calcium formate, wherein the formic acid-amine adduct prepared in a process using hydrogenation of carbon dioxide is reacted with a calcium compound, whereby calcium formate can be manufactured and separated in a simple process while excluding complicated separation processes and co-bases required by conventional formic acid manufacturing processes, with the resultant improvement of economical benefit and efficacy in the process.

Abstract: One or more synchronization procedures in wireless communications are provided. A wireless user device may determine a global navigation satellite system (GNSS) as a synchronization reference source associated with a sidelink synchronization. The wireless user device may determine, based on the GNSS being the synchronization reference source associated with a sidelink synchronization and a subcarrier spacing index for sidelink, a slot number for sidelink communication. The wireless user device may transmit, based on the slot number, a sidelink synchronization signal from the wireless user device to a second wireless user device.

Abstract: A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.

Abstract: A method, apparatus, and system for transmitting and receiving a physical broadcast channel (PBCH) are provided. A base station may perform a first scrambling process on PBCHs in a time period before a channel coding, and perform a second scrambling process after the channel coding. PHCH payloads and PBCH DMRS may provide information bits to be used in the scrambling processes. A wireless user device may receive one or more PBCHs transmitted from the base station.

Abstract: Provided is a method and apparatus for receiving a reference signal. A wireless user device may determine, based on a synchronization signal (SS) block index and based on an index associated with a time interval, an initialization value associated with a reference signal for a physical broadcast channel (PBCH). The wireless user device may receive, based on the initialization value and based on a frequency domain shift value, the reference signal via at least one resource element (RE). The reference signal may be mapped, based on the frequency domain shift value, to the at least one RE. The wireless user device may receive the PBCH.

Abstract: An apparatus and method for processing positioning reference signal are disclosed. A method may include receiving, by a narrow-band (NB) user equipment (UE), positioning reference signal (PRS) configuration information, determining, by the NB UE, narrowband PRS (NB PRS) configuration information for the NB UE, the NB PRS configuration information comprising information of an NB PRS reference cell that generates an NB PRS for the NB UE, determining, by the NB UE, PRS configuration information for a UE, the UE being assigned to use a frequency band unavailable for the NB UE, and the PRS configuration information comprising information of a PRS reference cell that generates a PRS for the UE, generating, based on the NB PRS configuration information and the PRS configuration information, a reference signal time difference (RSTD) measurement, and transmitting, by the NB UE, the RSTD measurement.

Abstract: A semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. Air gaps are defined between the conductive patterns. The slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. A smallest width of the second interposition part is smaller than a smallest width of the first interposition part.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes a stack structure that includes interlayer insulating layers and gate lines alternately stacked with each other. A data storage layer may be formed to vertically penetrate the stack structure. The data storage layer may include a plurality of ferroelectric layers. A channel layer may be formed to be surrounded by the data storage layer.

Abstract: A beamforming maximum ratio combining (MRC) pre-processing system for adjacency removal of HDR includes a first filter module implemented in a digital radio receiver and allowing only a low side band signal having a frequency lower than a center frequency of a radio signal in a selected channel to pass therethrough and a processor module performing beamforming on the selected channel based on a difference in gain value between the signal that has passed through the filter module and an original signal that has not passed through the filter module.

Abstract: A semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. Air gaps are defined between the conductive patterns. The slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. A smallest width of the second interposition part is smaller than a smallest width of the first interposition part.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, a first dielectric layer surrounding a sidewall of the ferroelectric layer, and sacrificial patterns interposed between the first dielectric layer and the insulating layers and including a material with a higher dielectric constant than the first dielectric layer.

Abstract: An image reading apparatus includes an image sensor, a document feeder, and a processor. The document feeder includes a first driving device, a second driving device, a third driving device, a first sensor, and a second sensor. The first driving device includes a pick-up member to move documents from a tray to a document conveying path using a driving force through a first clutch. The second driving device is to move the tray with the documents to a side of the pick-up member using a driving force through a second clutch. The third driving device to move the documents along the document conveying path onto the image sensor using the driving force of the motor. The first and second sensors detect the documents on the document conveying path. The processor controls an operation of the first clutch based on the signals of the first and second sensors.

Abstract: A ferroelectric memory device includes interlayer insulating layers and gate lines alternately stacked, a data storage layer vertically passing through the interlayer insulating layers and the gate lines and having a cylindrical shape, and a channel layer formed in an area enclosed by the data storage layer. The data storage layer includes a first ferroelectric layer abutting on the channel layer, a second ferroelectric layer abutting on the interlayer insulating layers and the gate lines, and an interface layer formed between the first and the second ferroelectric layers.

Abstract: A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.

Abstract: A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.