Abstract: The present disclosure relates to a memory device and a manufacturing method of the memory device. The memory device according to an embodiment includes a stacked structure including gate lines separated from and stacked on top of each other, a main plug formed in a vertical direction to the stacked structure, a plug separation pattern separating the main plug into first and second sub-plugs, a gap formed in the plug separation pattern; and a separation layer surrounding the gap.

Abstract: The invention relates to biodegradable iron alloy-containing compositions for use in preparing medical devices. In addition, biodegradable crystalline and amorphous compositions of the invention exhibit properties that make them suitable for use as medical devices for implantation into a body of a patient. The compositions include elemental iron and one or more elements selected from manganese, magnesium, zirconium, zinc and calcium. The compositions can be prepared using a high energy milling technique. The resulting compositions and the devices formed therefrom are useful in various surgical procedures, such as but not limited to orthopedic, craniofacial and cardiovascular.

Abstract: The invention relates to biodegradable iron alloy-containing compositions for use in preparing medical devices. In addition, biodegradable crystalline and amorphous compositions of the invention exhibit properties that make them suitable for use as medical devices for implantation into a body of a patient. The compositions include elemental iron and one or more elements selected from manganese, magnesium, zirconium, zinc and calcium. The compositions can be prepared using a high energy milling technique. The resulting compositions and the devices formed therefrom are useful in various surgical procedures, such as but not limited to orthopedic, craniofacial and cardiovascular.

Abstract: Biodegradable compositions containing from 10.0 to 95.0 weight percent iron for use in preparing medical devices. These biodegradable compositions exhibit properties that make them suitable for use as medical devices for implantation into a body of a patient. The compositions also include one or more elements selected from manganese, magnesium, zirconium, zinc and calcium. The compositions can be prepared using a high energy milling technique and high energy mechanical alloying followed by compaction and sintering, film deposition techniques, such as, pulsed laser deposition (PLD), as well as melting, casting, homogenization and extrusion methods. The resulting compositions and the medical devices formed therefrom are useful in various surgical procedures, such as but not limited to orthopedic, craniofacial and cardiovascular.

Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.

Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.

Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.

Abstract: The invention relates to biodegradable iron alloy-containing compositions for use in preparing medical devices. In addition, biodegradable crystalline and amorphous compositions of the invention exhibit properties that make them suitable for use as medical devices for implantation into a body of a patient. The compositions include elemental iron and one or more elements selected from manganese, magnesium, zirconium, zinc and calcium. The compositions can be prepared using a high energy milling technique. The resulting compositions and the devices formed therefrom are useful in various surgical procedures, such as but not limited to orthopedic, craniofacial and cardiovascular.

Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.

Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region adjacent to the cell region, a cell stack structure located in the cell region, the cell stack structure including vertical memory strings, a circuit located in the peripheral region, the circuit driving the vertical memory strings, and an interlayer insulating layer formed on the substrate to cover the cell stack structure and the circuit, and including air gaps located between the cell region and the peripheral region.

Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region adjacent to the cell region, a cell stack structure located in the cell region, the cell stack structure including vertical memory strings, a circuit located in the peripheral region, the circuit driving the vertical memory strings, and an interlayer insulating layer formed on the substrate to cover the cell stack structure and the circuit, and including air gaps located between the cell region and the peripheral region.

Abstract: A semiconductor memory device includes a memory block configured to include memory cells coupled to word lines and a peripheral circuit configured to perform a first program operation, a program verifying operation and a second program verifying operation for memory cells coupled to a word line selected from the word lines, and supply program allowable voltages having different levels to selected bit lines of program allowable cells located between program inhibition cells in the first program operation and the second program operation.

Abstract: A control method of an image forming apparatus which is connected to an external apparatus, supports a resource saving mode, and outputs document data is provided. The control method includes: selecting the document data to be output, selecting an output option to be applied to the selected document data, comparing a resource saving value corresponding to the output option to be applied to the document data and a resource saving set value which is pre-set in the image forming apparatus, displaying at least one suggestion option to save resources of the document data according to a result of comparison, and selecting one of the displayed suggestion option and outputting the document data.

Abstract: The invention relates to biodegradable iron alloy-containing compositions for use in preparing medical devices. In addition, biodegradable crystalline and amorphous compositions of the invention exhibit properties that make them suitable for use as medical devices for implantation into a body of a patient. The compositions include elemental iron and one or more elements selected from manganese, magnesium, zirconium, zinc and calcium. The compositions can be prepared using a high energy milling technique. The resulting compositions and the devices formed therefrom are useful in various surgical procedures, such as but not limited to orthopedic, craniofacial and cardiovascular.

Abstract: A semiconductor memory device includes a memory block configured to include memory cells coupled to word lines and a peripheral circuit configured to perform a first program operation, a program verifying operation and a second program verifying operation for memory cells coupled to a word line selected from the word lines, and supply program allowable voltages having different levels to selected bit lines of program allowable cells located between program inhibition cells in the first program operation and the second program operation.

Abstract: A program method of a semiconductor memory device may include precharging first bit lines, coupled to first strings, to increase a potential level of the first strings to a first potential level; programming memory cells of a selected word line, wherein the memory cells are coupled to second bit lines; pre-discharging the first bit lines to decrease a potential level of the word lines to a second potential level, wherein the second potential level is lower than the first potential level; and discharging the first bit lines and the word lines to a ground voltage after the pre-discharging.

Abstract: A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.

Abstract: Disclosed are an image forming apparatus and a menu select and display method thereof. A select and display method of a menu which is displayed on a (touch) screen of an image forming apparatus, the method includes: displaying an initial screen including at least one menu list to perform at least one of functions of the image forming apparatus; selecting one of the displayed menu lists by touch; and displaying in the selected menu area a first subordinate menu corresponding to the menu area to set an option for the selected menu without converting the remaining menus. With this, an image forming apparatus and a menu select and display method thereof selectively converts a selected menu area only and displays a subordinate menu to set an option for the menu to thereby reduce a load arising from the conversion and returning of the overall screen and reduces user's inconvenience.

Abstract: A program method of a nonvolatile memory device includes applying a program voltage to a selected word line, applying a first pass voltage to at least one word line adjacent to the selected word line, applying at least one first middle voltage lower than the first pass voltage but higher than an isolation voltage to at least one word line adjacent to the word line receiving the first pass voltage, applying the isolation voltage to a word line adjacent to the word line receiving the first middle voltage, applying at least one second middle voltage higher than the isolation voltage but lower than a second pass voltage to at least one word line adjacent to the word line receiving the isolation voltage, and applying a second pass voltage to at least one word line adjacent to the word line receiving the second middle voltage.

Abstract: An enlargement display method of a target area of an image forming apparatus which comprises a touch screen includes selecting a target zooming function to zoom at least one menu displayed on the touch screen as a target screen to perform at least one of functions of the image forming apparatus, enlarging and displaying at least one menu corresponding to the target area according to the selection, selecting at least one of navigation buttons to move the target area, and moving and displaying the enlarged target area through the selected navigation button. With this, the image forming apparatus and the enlargement display method enlarge and display the necessary menu as the target area and the target area is moved through the navigation button to thereby improve a user's convenience.