Abstract: A program method of a nonvolatile memory device includes applying a program voltage to a selected word line, applying a first pass voltage to at least one word line adjacent to the selected word line, applying at least one first middle voltage lower than the first pass voltage but higher than an isolation voltage to at least one word line adjacent to the word line receiving the first pass voltage, applying the isolation voltage to a word line adjacent to the word line receiving the first middle voltage, applying at least one second middle voltage higher than the isolation voltage but lower than a second pass voltage to at least one word line adjacent to the word line receiving the isolation voltage, and applying a second pass voltage to at least one word line adjacent to the word line receiving the second middle voltage.

Abstract: A program method of a semiconductor memory device may include precharging first bit lines, coupled to first strings, to increase a potential level of the first strings to a first potential level; programming memory cells of a selected word line, wherein the memory cells are coupled to second bit lines; pre-discharging the first bit lines to decrease a potential level of the word lines to a second potential level, wherein the second potential level is lower than the first potential level; and discharging the first bit lines and the word lines to a ground voltage after the pre-discharging.

Abstract: A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.

Abstract: A method of programming a non-volatile memory device includes applying a power supply voltage to a drain select line, applying a high level voltage to a drain-side pass word line or a source-side pass word line, and applying a pass voltage to unselected word lines and a program voltage to a selected word line. The high level voltage is applied to the drain-side pass word line or the source-side pass word line before applying the pass voltage to the unselected word lines and the program voltage to the selected word line.

Abstract: A control method of an image forming apparatus which is connected to an external apparatus, supports a resource saving mode, and outputs document data is provided. The control method includes: selecting the document data to be output, selecting an output option to be applied to the selected document data, comparing a resource saving value corresponding to the output option to be applied to the document data and a resource saving set value which is pre-set in the image forming apparatus, displaying at least one suggestion option to save resources of the document data according to a result of comparison, and selecting one of the displayed suggestion option and outputting the document data.

Abstract: An enlargement display method of a target area of an image forming apparatus which comprises a touch screen includes selecting a target zooming function to zoom at least one menu displayed on the touch screen as a target screen to perform at least one of functions of the image forming apparatus, enlarging and displaying at least one menu corresponding to the target area according to the selection, selecting at least one of navigation buttons to move the target area, and moving and displaying the enlarged target area through the selected navigation button. With this, the image forming apparatus and the enlargement display method enlarge and display the necessary menu as the target area and the target area is moved through the navigation button to thereby improve a user's convenience.

Abstract: Disclosed are an image forming apparatus and a menu select and display method thereof. A select and display method of a menu which is displayed on a (touch) screen of an image forming apparatus, the method includes: displaying an initial screen including at least one menu list to perform at least one of functions of the image forming apparatus; selecting one of the displayed menu lists by touch; and displaying in the selected menu area a first subordinate menu corresponding to the menu area to set an option for the selected menu without converting the remaining menus. With this, an image forming apparatus and a menu select and display method thereof selectively converts a selected menu area only and displays a subordinate menu to set an option for the menu to thereby reduce a load arising from the conversion and returning of the overall screen and reduces user's inconvenience.

Abstract: A method of programming a non-volatile memory device includes applying a power supply voltage to a drain select line, applying a high level voltage to a drain-side pass word line or a source-side pass word line, and applying a pass voltage to unselected word lines and a program voltage to a selected word line. The high level voltage is applied to the drain-side pass word line or the source-side pass word line before applying the pass voltage to the unselected word lines and the program voltage to the selected word line.

Abstract: A flash memory device has an improved pre-program function. The flash memory device comprises memory cell blocks each including wordlines, bitlines, and memory cells sharing common source lines; an erase controller generating a pre-program control signal in response to an erase command; and a voltage selection circuit selecting one of first and second common source voltages in response to one among the pre-program control signal, a read command, and a program command and outputting the selected voltage to a global common source line.

Abstract: The present invention relates to a flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell. According to the present invention, a source region and a drain region are first formed and a tunnel oxide film is then formed. Therefore, it is possible to prevent damage of the tunnel oxide film due to an ion implantation process. Further, independent two channel regions are formed below the floating gate. Thus, it is possible to store data of two or more bits at a single cell. In addition, the tunnel oxide film, the floating gate and the dielectric film having an ONO structure are formed at a given regions. It is thus possible to reduce the steps of a process and improve an electrical characteristic and integration level of a device.

Abstract: The present invention relates to a flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell. According to the present invention, a source region and a drain region are first formed and a tunnel oxide film is then formed. Therefore, it is possible to prevent damage of the tunnel oxide film due to an ion implantation process. Further, independent two channel regions are formed below the floating gate. Thus, it is possible to store data of two or more bits at a single cell. In addition, the tunnel oxide film, the floating gate and the dielectric film having an ONO structure are formed at a given regions. It is thus possible to reduce the steps of a process and improve an electrical characteristic and integration level of a device.

Abstract: The present invention relates to a flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell. According to the present invention, a source region and a drain region are first formed and a tunnel oxide film is then formed. Therefore, it is possible to prevent damage of the tunnel oxide film due to an ion implantation process. Further, independent two channel regions are formed below the floating gate. Thus, it is possible to store data of two or more bits at a single cell. In addition, the tunnel oxide film, the floating gate and the dielectric film having an ONO structure are formed at a given regions. It is thus possible to reduce the steps of a process and improve an electrical characteristic and integration level of a device.

Abstract: The present invention relates to a flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell. According to the present invention, a source region and a drain region are first formed and a tunnel oxide film is then formed. Therefore, it is possible to prevent damage of the tunnel oxide film due to an ion implantation process. Further, independent two channel regions are formed below the floating gate. Thus, it is possible to store data of two or more bits at a single cell. In addition, the tunnel oxide film, the floating gate and the dielectric film having an ONO structure are formed at a given regions. It is thus possible to reduce the steps of a process and improve an electrical characteristic and integration level of a device.