Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.

Abstract: A suspension insulator includes a bracket section configured to be coupled to a vehicle body, an inner core positioned inside the bracket section, a bushing module surrounding the inner core and having a passage part which contains a fluid, an outer pipe surrounding the bushing module, and an upper section coupled to the bracket section and configured to cover the bushing module.

Abstract: Disclosed is a wake-up circuit including a preprocessing unit that generates a first signal by removing noise from an input signal, a comparison unit that generates a second signal based on the first signal and weight data, an output circuit that generates a power signal based on the second signal and an initialization signal, and a micro control unit (MCU) that generates the initialization signal based on a state signal received from the output circuit. The comparison unit includes a spike neuron network structure that generates the second signal by applying the weight data to the first signal. The output circuit supplies power to an external sensor node in response to the power signal.

Abstract: Disclosed is a synaptic transistor, including a substrate, an expansion gate electrode disposed to extend in one direction on the substrate, a gate insulating layer including ions, covering the expansion gate electrode, and disposed on the substrate, a channel layer disposed on the gate insulating layer to correspond to one end of the expansion gate electrode, source and drain electrodes spaced apart from each other, covering both ends of the channel layer, and disposed on the gate insulating layer, and a pad electrode disposed on the gate insulating layer to correspond to the other end of the expansion gate electrode.

Abstract: Disclosed is an operating method of a user communication device, which includes receiving a wakeup signal from a stationary communication device over a first human body communication channel, the wakeup signal having a frequency in a low frequency band, switching from a standby mode to a wakeup mode in response to the wakeup signal, and receiving a data signal from the stationary communication device over the first human body communication channel during the wakeup mode, and the first human body communication channel is provided by a body of a user of the user communication device.

Abstract: An image decoding method comprises the steps of: obtaining a current coding tree unit (CTU) of a first size configuring a current picture; determining whether to implicitly divide the current coding tree unit; dividing the current coding tree unit into one or more coding units (CUs) based on the determination; obtaining, from a bitstream, division information for a current coding unit among the one or more coding units; and dividing and decoding the current coding unit..

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber in which a process with respect to a substrate is performed, a susceptor which is installed in the chamber and on which the substrate is placed, a plurality of lift pins passing through the susceptor to support the substrate, and a plurality of protection plugs protruding from a bottom surface of the susceptor to surround a portion of each of the lift pins protruding from the bottom surface of the susceptor.

Abstract: A muscular strength assisting apparatus includes a muscular strength assisting portion that assists a user's muscular strength and a first connecting link including one side connected to one side of the muscular strength assisting portion and an opposite side rotatable relative to a shoulder of the user about a first rotation axis. The muscular strength assisting portion includes an upper arm module that assists muscular strength of an upper arm of the user and a link assembly including one side connected to one side of the upper arm module to be rotatable about a second rotation axis non-parallel to the first rotation axis and an opposite side disposed adjacent to a portion of a body of the user to be supported on the user.

Abstract: A display apparatus includes a display module having a display panel configured to display an image, a sound generating device configured to vibrate the display panel, an adhesive member connected between a rear surface the display panel and the sound generating device, and a structure configured to support the sound generating device, wherein the structure is connected to at least a portion of the sound generating device and a portion of the rear surface the display panel.

Abstract: A display apparatus includes a display module including a display panel configured to display an image and a sound generating module on a rear surface of the display panel, the sound generating module includes a vibration generating device, a circuit board on a lower surface of the vibration generating device, a first adhesive member between the circuit board and the vibration generating device, and a second adhesive member between the vibration generating device and the display panel, an elastic modulus of the second adhesive member differing from an elastic modulus of the first adhesive member.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: A display apparatus includes a display module having a display panel configured to display an image, a sound generating device configured to vibrate the display panel, an adhesive member connected between a rear surface the display panel and the sound generating device, and a structure configured to support the sound generating device, wherein the structure is connected to at least a portion of the sound generating device and a portion of the rear surface the display panel.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: A display apparatus includes a display module having a display panel configured to display an image; a sound generating device on a rear surface of the display panel and including a first side and a second side perpendicular to the first side and an adhesive member in a partial region of the sound generating device, the adhesive member having a size smaller than one of the first side and the second side of the sound generating device.

Abstract: A display apparatus includes a display module including a display panel configured to display an image and a sound generating module on a rear surface of the display panel, the sound generating module includes a vibration generating device, a circuit board on a lower surface of the vibration generating device, a first adhesive member between the circuit board and the vibration generating device, and a second adhesive member between the vibration generating device and the display panel, an elastic modulus of the second adhesive member differing from an elastic modulus of the first adhesive member.

Abstract: A display apparatus includes a display module including a display panel configured to display an image and a sound generating module on a rear surface of the display panel, the sound generating module includes a vibration generating device, a circuit board on a lower surface of the vibration generating device, a first adhesive member between the circuit board and the vibration generating device, and a second adhesive member between the vibration generating device and the display panel, an elastic modulus of the second adhesive member differing from an elastic modulus of the first adhesive member.

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

Abstract: A semiconductor device includes an etching stop film disposed on a substrate; an interlayer insulating film on the etching stop film; a first trench and a second trench which are spaced apart in a first direction, and penetrate the etching stop film and the interlayer insulating film, the first trench having a side wall that exposes the interlayer insulating film, and the second trench having a side wall that exposes the interlayer insulating film; a first spacer which covers the interlayer insulating film exposed by the side wall of the first trench and does not cover a portion of the side wall of the first trench; a second spacer which covers the interlayer insulating film exposed by the side wall of the second trench and does not cover a portion of the side wall of the second trench; a first barrier layer which extends along a side wall of the first spacer, the portion of the side wall of the first trench not covered by the first spacer, and a bottom surface of the first trench; a first filling film which

Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.