Abstract: A wireless network system and method to secure Quality of Service (QoS) according to a type of Wireless Local Area Network (WLAN) service in a WLAN communication system based on IEEE 802.11 includes: an authentication server adapted to set a priority for an access category of a wireless network service requested by a user to perform an authentication procedure in response to a user terminal requesting authentication for access to a wireless network; and an Access Point (AP) adapted to receive and store access category information of the user terminal authenticated by the authentication server and to compare access category information contained in a packet received from the user terminal to the previously stored access category information of the user terminal to control access to the wireless network.

Abstract: A method for fabricating a semiconductor device with a buried gate includes: etching a substrate to form a plurality of trenches; forming a plurality of buried gates that fill lower portions of the trenches; forming a plurality of sealing layers that gap-fill upper portions of the trenches and have protrusions higher than a top surface of the substrate; forming an inter-layer insulation layer over the whole surface of the substrate including the sealing layers; and etching the inter-layer insulation layer to form a contact hole that is aligned with a space between the protrusions of the sealing layers.

Abstract: A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

Abstract: A phase-change random access memory device includes a semiconductor substrate, a bottom electrode structure formed on the semiconductor substrate, a cylindrical bottom electrode contact that includes a conductive material layer, which is in contact with the bottom electrode, and a cylindrical phase-change material layer that is in contact with the bottom electrode contact. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.

Abstract: An air injection apparatus configured to inject air into a buffer packing bag.

Abstract: An air bag includes two inner sheets facing each other, heat resistance materials located between the two inner sheets and applied to any one inner sheet in its length direction, two outer sheets located outside the two inner sheets, a second thermal bonding line thermally bonding the inner and outer sheets along the heat resistance materials, a first thermal bonding line thermally bonding the two outer sheets with gap from the second thermal bonding line to form an air input channel, and third thermal bonding lines extending from the second thermal bonding line oppositely to the channel to form air pillars, at least two heat resistance materials being continuously formed over the pillars, an air injected through the channel being introduced into the pillars between the two inner sheets, and the two inner sheets positioned in the pillars being adhered and pressed to any one outer sheet by an inner pressure of the pillars.

Abstract: Disclosed are a multi-functional resin composite material including (A) a thermoplastic resin, (B) a nickel-coated carbon fiber, (C) a carbon nanotube, and (D) an inorganic material having a volume resistance of about 10?3 ?·m or less and a relative permeability of about 5000 or more, and a molded product fabricated using the same.

Abstract: The present invention provides a compact optical fiber amplifier, which can minimize the size of an optical module and increase the degree of freedom in mounting the module on a board. The compact optical fiber amplifier according to the present invention includes: an optical module including a plurality of optical elements provided therein, an input port for introducing an optical fiber thereinto, and an outlet port for extract the optical fiber to the outside of the module; and a plurality of optical fibers introduced into or extracted from the optical module through the input port or the outlet port of the optical module and disposed above a predetermined radius of curvature on the outside of the optical module.

Abstract: A process for forming a copper wiring and the prevention of copper ion migration in a semiconductor device is disclosed herein. The process includes conducting a post-cleaning process for a copper layer that is to form the cooper wiring after already having undergone a CMP process. The post-cleaning process includes conducting a primary chemical cleaning using a citric acid-based chemical. A secondary chemical cleaning is then conducted on the copper layer having undergone the primary chemical cleaning using an ascorbic acid-based chemical. After the post-cleaning process is completed, the migration of copper ions over time is prevented thereby improving the reliability of the semiconductor device.

Abstract: A liquid crystal display includes a first substrate and a second substrate which face each other and each include a display area and a peripheral area, a liquid crystal layer in the display areas and between the first substrate and the second substrate, and a conductive sealant combining the first substrate and the second substrate. The first substrate includes a common electrode in the display and peripheral areas of the first substrate. The second substrate includes a first and signal lines in the peripheral area of the second substrate, a first insulating layer on the first signal line and the second signal line, and a conductor on the first insulating layer in the peripheral area and connected to the first signal line through a contact hole. The common electrode includes a cutout corresponding to the conductor, and the cutout is at a corner of the display areas.

Abstract: A liquid crystal display includes a first substrate including a display area and a fan-out area, a plurality of pixels disposed in the display area; a dam disposed in the fan-out area, and a plurality of display signal lines disposed on the first substrate, where the plurality of display signal lines is connected to the plurality of pixels in the display area, the plurality of display signal lines includes a plurality of wiring units in the fan-out area, the dam is disposed in a dummy area between the plurality of wiring units, and a shape of the dam is different from a shape of the plurality of wiring units.

Abstract: Disclosed is an electromagnetic wave interference (EMI)/radio frequency interference (RFI) shielding resin composite material including (A) a thermoplastic polymer resin, (B) a tetrapod whisker, and (C) a low melting point metal.

Abstract: Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material.

Abstract: Magnetically actuated micro-electro-mechanical capacitor switches in laminate are disclosed. According to one embodiment, an apparatus comprises a first layer comprising a coil and magnetic element, the magnetic element made from one of nickel and iron; a second layer comprising a flexible member, wherein a permanent magnet is attached to the flexible member; a conductive plate having an insulating dielectric coating, the conductive plate attached to one of the flexible member or a magnet; and a third layer comprising a transmission line and magnetic material, wherein the transmission line comprises one or more of a signal conductor and one or more ground conductors in near proximity.

Abstract: A sensor node management system in a Radio Frequency Identification/Ubiquitous Sensing Network (RFID/USN) infrastructure is provided, in which a sensor node has a local ID in a sensor network, a gateway receives, from the sensor node, node information including the local ID and an ID of a home gateway to which the sensor node initially belongs and registers the node information about the sensor node to a location information server, and the location information server registers and manages node information about sensor nodes within an area of the gateway. The location information server generates a global ID using the local ID and the ID of the home gateway, the global ID being recognized as an address of the sensor node by an Internet Protocol (IP) network.

Abstract: An actuator for an active roll control system that connects a stabilizer bar with a lower arm may include a screw housing having a space, a power transmitter slidably mounted in an upper interior circumference of the screw housing, and having an upper end portion connected to one end of the stabilizer bar and a lower end portion slidably movable in the space wherein the lower end portion of the power transmitter includes a screw groove and a screw thread is formed at an interior circumference of an inlet portion, a lead screw being inserted in the screw groove of the power transmitter and threaded to the screw thread of the inlet portion and having a screw rotation shaft integrally connected to a lower end thereof, and a drive motor mounted at a lower portion of the screw housing and having a rotation shaft connected to the screw rotation shaft.

Abstract: A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

Abstract: A semiconductor device having vertically aligned transistors made from pillar structures that have flat side surfaces is presented. The semiconductor device includes a semiconductor substrate, spacers, and gates. The semiconductor substrate has pillar structures that have flat side surfaces. The spacers are on sidewalls only on the upper portions of the pillar structures. The gates surround lower portions of the pillar structures.

Abstract: A phase-change random access memory device includes a semiconductor substrate, a bottom electrode structure formed on the semiconductor substrate, a cylindrical bottom electrode contact that includes a conductive material layer, which is in contact with the bottom electrode, and a cylindrical phase-change material layer that is in contact with the bottom electrode contact. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.

Abstract: An active roll control system actively controls roll of a vehicle by changing torsional rigidity of a stabilizer bar by using change in tension of a wire connected to the stabilizer bar and both lower arms according to an operation of a pulley unit mounted at the lower arm, simplifies control thereof as a consequence that an electric motor controls operation of the pulley unit, and simplifies layout thereof.