Abstract: A system for aligning items, which includes a packaging box transfer device to transfer a packaging box accommodating items therein, a fixing device to fix, at a withdrawal position where the items are taken out of the packaging box, the packaging box transferred by the packaging box transfer device with its top open, a withdrawal device to move to a space in which the items are accommodated in the packaging box so as to suck and take out the items, an item transfer device to transfer the items taken out by the withdrawal device with the items placed on the item transfer device, a sensor mounted on the withdrawal device to detect directions of the items taken out by the withdrawal device, and a rotating device to rotate the items taken out by the withdrawal device with the items placed on the rotating device.

Abstract: A packing box folding system, and the packing box folding system including a transfer conveyor on which transfers the packing box from a packing box introducing position to a folded packing box discharging position; a fixed guide panel which extends between the packing box introducing position and the packing box discharging position and is disposed on one side of the transfer conveyor in the width-direction; and a movable suction device which is disposed on the side opposite to the fixed guide panel in the width-direction of the transfer conveyor and is movable between the packing box introducing position and the packing box discharging position, wherein the movable suction device suctions the side surface of the packing box, which faces the side surface in contact with the fixed guide panel, and presses the suctioned side surface inward in the width-direction.

Abstract: Provided is a steel suitable as a material for automobiles and, specifically, to a high-strength steel sheet having excellent hole expandability and ductility, and a manufacturing method therefor. The high-strength steel sheet of the present invention has a microstructure comprising a hard phase and a soft phase, wherein a martensite phase, which is the hard phase, is evenly distributed in a recrystallized ferrite matrix through optimized cold-rolling and annealing processes, and a nonequilibrium (quasi-equilibrium) ferrite phase is introduced at the interface between the hard phase and the soft phase so as to increase the crack resistance during processing.

Abstract: A display device and a method of manufacturing a display device are provided.

Abstract: A novel compound for a capping layer, and an organic light emitting device containing the same are disclosed.

Abstract: An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including a doped area and an undoped area, a first insulation layer that covers the semiconductor layer, a first conductor on the first insulation layer, a second insulation layer that covers the first conductor, a second conductor on the second insulation layer, a third insulation layer that covers the second conductor, and a third conductor on the third insulation layer, wherein, in the semiconductor layer that overlaps the first conductor, the doped area is between undoped areas.

Abstract: A method of manufacturing an aerosol generating rod includes providing a sheet of a first non-tobacco material by using at least one first conveying roller; crimping the sheet of the first non-tobacco material by using a first crimping device; applying an aerosol generating material to at least one surface of the sheet of the first non-tobacco material by using a first spray nozzle; applying a liquid containing a tobacco component to at least one surface of the sheet of the first non-tobacco material by using a slit nozzle; drying the sheet of the first non-tobacco material by using a drying device; and forming the aerosol generating rod by forming the sheet of the first non-tobacco material into a rod by using a rod forming device.

Abstract: A scan driver includes: a first transistor having a first electrode coupled to an output scan line, a second electrode coupled to a first power line, and a gate electrode coupled to a first node; a second transistor having a first electrode coupled to a first clock line, a second electrode coupled to the output scan line, and a gate electrode coupled to a second node; a third transistor having a first electrode coupled to the first node, a second electrode coupled to a first input scan line, and a gate electrode coupled to a second clock line; and a fourth transistor having a first electrode coupled to the second node and a second electrode and a gate electrode, which are coupled to a second input scan line, wherein the first input scan line and the second input scan line are different from each other.

Abstract: A display device includes a first electrode, a second electrode spaced apart from the first electrode to face the first electrode, a first insulation layer, at least one light emitting element, a second insulation layer, a first contact electrode, and a second contact electrode. The first insulation layer includes an overlapping area which overlaps the at least one light emitting element, a first non-overlapping area which extends outward from the first end of the at least one light emitting element and does not overlap the at least one light emitting element, and a second non-overlapping area which extends outward from the second end of the at least one light emitting element and does not overlap the at least one light emitting element.

Abstract: An apparatus for analyzing a substance of an object in a non-invasive manner is provided. The apparatus for analyzing a substance of an object includes: a sensor part including an image sensor, and a plurality of light sources disposed around the image sensor; and a processor configured to drive the plurality of light sources to obtain absorbance of each pixel of the image sensor based on an intensity of light received by each pixel, to correct the absorbance of each pixel based on a distance between the plurality of light sources and each pixel, and to analyze a substance of an object based on the corrected absorbance of each pixel.

Abstract: This disclosure generally relates to a method for manufacturing a Group III-nitride semiconductor light emitting structure. In particular, it relates to a method for manufacturing a Group III-nitride semiconductor light emitting structure capable of shifting the emission wavelength towards to a longer wavelength through an appropriate barrier (the Group III-nitride semiconductor is composed of a compound of Al(x)Ga(y)In(1-x-y)N (0?x?1, 0?y?1, 0?x+y?1)).

Abstract: The present invention provides a light source apparatus and method for integrating diffused light with high efficiency using a collimating including an axicon lens, collimating it, tuning the wavelength of desired light, and passing it.

Abstract: A novel compound for a capping layer, and an organic light-emitting device containing the same are disclosed.

Abstract: A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

Abstract: A display device includes: a display unit including a first display area, and a second display area; a scan driver configured to provide a scan signal to each scan line connected to the plurality of first pixels and the plurality of second pixels; and an emission controller configured to provide an emission control signal to each emission control line connected to the plurality of first pixels and the plurality of second pixels, wherein the plurality of first pixels have a first density in the first display area, the plurality of second pixels have a second density less than the first density in the second display area, and the plurality of second pixels include at least one sub pixel including one boosting capacitor.

Abstract: The present disclosure relates to a liquid crystal polyester composition that can be injection molded into an ultra-thin film and has improved fluidity, and a manufacturing method thereof. The polyester resin composition for ultra-thin injection molding includes 60 to 85% by weight of a liquid crystal polyester resin and 15 to 40% by weight of an inorganic filler having an average cross-sectional aspect ratio of 2 to 6, based on the total weight of the composition, wherein the liquid crystal polyester resin includes 0.1 to 10 mol % of hydroxybenzoic acid (HBA), 40 to 60 mol % of hydroxynaphthoic acid, 20 to 30 mol % of biphenol, and 20 to 30 mol % of terephthalic acid. The liquid crystal polyester resin composition for ultra-thin injection molding according to the present disclosure not only has excellent mechanical strength and heat resistance, but also can exhibit very excellent fluidity in a high-speed injection process.

Abstract: A method of manufacturing a semiconductor device includes forming a first through via surrounded by a liner in a first semiconductor substrate, first-recessing the semiconductor substrate to expose a first portion of the liner covering an end portion of the first through via, and forming a first diffusion barrier layer covering the first-recessed first semiconductor substrate and exposing a second portion of the liner. The method also includes removing the second portion of the liner and second-recessing the first diffusion barrier layer. The method further includes forming a second diffusion barrier layer that covers the second-recessed first diffusion barrier layer and a top portion of the liner from which the second portion is removed and exposes a top surface of the end portion of the first through via.