Abstract: There are provided a semiconductor and a method of fabricating the same. The semiconductor device may include a second semiconductor substrate directly bonded to a first semiconductor substrate. The first semiconductor substrate may include a first through via with an end portion protruding through a first top surface, the first top surface being a top surface of a first semiconductor substrate body, a liner extending to partially expose a side surface of the end portion of the first through via, and a first diffusion barrier layer. The liner may include a third top surface that is positioned at a lower height than a second top surface, the second top surface being a top surface of the end portion of the first through via and substantially equal to the first top surface. Alternatively, the liner may include a third surface positioned at a height that is lower than the second top surface and higher than the first top surface.

Abstract: The present invention relates to a steel sheet for use in automobiles, etc., and to a steel sheet that has high strength and high formability and is superb in terms of spot weldability, and a manufacturing method therefor.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: The cryogenic austenitic high-manganese steel having excellent corrosion resistance, according to one aspect of the present invention, comprises 0.2-0.5 wt % of C, 23-28 wt % of Mn, 0.05-0.5 wt % of Si, 0.03 wt % or less of P, 0.005 wt % or less of S, 0.5 wt % or less of Al, and 3-4 wt % of Cr, with the remainder being Fe and other unavoidable impurities, also comprises at least 95 area % of austenite as a microstructure, and has Cr concentration sections continuously formed within an area of 50 ?m in the thickness direction from the surface, wherein the Cr concentration sections comprise a high Cr concentration section having a relatively high concentration of Cr, and a low Cr concentration section having a relatively low concentration of Cr, and the high Cr concentration section may be distributed at 30 area % or less (but not 0%) relative to the whole surface area of the Cr sections.

Abstract: A method of manufacturing a semiconductor die stack structure includes: preparing a base die including a base die substrate and a base die inter-layer dielectric layer; forming a base die front-side bonding pad structure; preparing a bottom die having a bottom die substrate and bottom die through-electrode; forming a bottom die front-side bonding pad structure in the bottom die substrate; forming a base-bottom die stack structure where the bottom die front-side bonding pad structure is directly in contact with the base die front-side; forming a base die through-electrode vertically passing through the base die substrate and electrically connected to the base die front-side bonding pad structure; forming a base die back-side bump structure electrically connected to the base die through-electrode; stacking middle dies and a top die in the base-bottom die stack structure; and forming a bottom die back-side bump structure electrically connected to the bottom die through-electrode.

Abstract: The present invention relates to steel suitable as a material for an automotive structural member and particularly, to a high-strength and thick steel sheet having a low yield ratio and high strength, excellent formability and collision resistance due to excellent hole expandability through improved ductility, and a method thereof.

Abstract: In an embodiment, a semiconductor die includes a substrate, an interlayer insulating layer under a front-side surface the substrate, a horizontal metal interconnection in the interlayer insulating layer, a front-side pad under a lower surface of the interlayer insulating layer, a front-side bump structure under a lower surface of the front-side pad, a through-electrode vertically passing through the substrate, a back-side insulating layer over the back-side surface of the substrate, a first back-side metal plate layer over the back-side insulating layer, a back-side passivation layer over the back-side insulating layer and covering the first back-side metal plate layer, and a back-side bump structure over the through-electrode and the back-side passivation layer.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: Provided is a steel suitable as a material for automobiles and, specifically, to a high-strength steel sheet having excellent hole expandability and ductility, and a manufacturing method therefor. The high-strength steel sheet of the present invention has a microstructure comprising a hard phase and a soft phase, wherein a martensite phase, which is the hard phase, is evenly distributed in a recrystallized ferrite matrix through optimized cold-rolling and annealing processes, and a nonequilibrium (quasi-equilibrium) ferrite phase is introduced at the interface between the hard phase and the soft phase so as to increase the crack resistance during processing.

Abstract: A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

Abstract: A method of manufacturing a semiconductor device includes forming a first through via surrounded by a liner in a first semiconductor substrate, first-recessing the semiconductor substrate to expose a first portion of the liner covering an end portion of the first through via, and forming a first diffusion barrier layer covering the first-recessed first semiconductor substrate and exposing a second portion of the liner. The method also includes removing the second portion of the liner and second-recessing the first diffusion barrier layer. The method further includes forming a second diffusion barrier layer that covers the second-recessed first diffusion barrier layer and a top portion of the liner from which the second portion is removed and exposes a top surface of the end portion of the first through via.

Abstract: A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.

Abstract: A semiconductor die stack structure includes a base die, a plurality of semiconductor die stack units, and bumps. Each of the plurality of semiconductor die stack units includes a lower semiconductor die and an upper semiconductor die. Each of the lower semiconductor die and the upper semiconductor die includes a body and a front-side pad structure. The front-side pad structure includes a front-side pad seed layer and a front-side pad pattern. The front-side pad pattern includes a first front-side pad portion, a second front-side pad portion, and a third front-side pad portion. The first front-side pad portion and the second front-side pad portion forms a staircase. The first front-side pad portion and the third front-side pad form a reverse staircase. The first front-side pad portion, the second front-side pad portion, and the third front-side pad include a same metal.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: In an example, a display device includes a rollable display including a display side and an opposite non-display side. The rollable display includes a conductive material with a pattern disposed on the non-display side. The device includes a housing configured to house the rollable display and configured to roll in and roll out the rollable display along a first direction, and a capacitive sensor including a transmitter and a receiver electrode disposed within the housing and configured to sense the pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a first photoresist layer on a substrate and forming a second photoresist layer on the first photoresist layer. The method also includes forming a first dissolvable region having a first width in the first photoresist layer and a second dissolvable region having a second width different from the first width in the second photoresist layer by radiating exposure light to some parts of the second and first photoresist layer. The method further includes forming a second opening in the second photoresist layer and a first opening in the first photoresist layer by developing the second dissolvable region and the first dissolvable region. The method additionally includes forming a conductive bump that fills the first and second openings.

Abstract: A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.

Abstract: Provided are a high-strength steel sheet having excellent bendability and formability, and a method for manufacturing same. The steel sheet includes: 0.05 to 0.12% of carbon (C), 2.0 to 3.0% of manganese (Mn), 0.5% or less (excluding 0%) of silicon (Si), 1.0% or less (excluding 0%) of chromium (Cr), 0.1% or less (excluding 0%) of niobium (Nb), 0.1% or less (excluding 0%) of titanium (Ti), 0.0025% or less (excluding 0%) of boron (B), 0.02 to 0.05% of aluminum (sol.Al), 0.05% or less (excluding 0%) of phosphorus (P), 0.01% or less (excluding 0%) of sulfur (S), 0.01% or less (excluding 0%) of nitrogen (N), with a balance of Fe and inevitable impurities, and 35 to 50% of ferrite and 35 to 45% of bainite, and a balance of martensite, the ferrite comprising, by area fraction: 8 to 15% of non-recrystallized ferrite and 27 to 35% of recrystallized ferrite, as a microstructure.

Abstract: Provided according to one embodiment of the present invention are a non-magnetic steel material and a method for manufacturing the same. The steel material comprises 15-27 wt % of manganese, 0.1-1.1 wt % of carbon, 0.05-0.50 wt % of silicon, 0.03 wt % or less (0% exclusive) of phosphorus, 0.01 wt % or less (0% exclusive) of sulfur, 0.050 wt % or less (0% exclusive) of aluminum, 5 wt % or less (0% inclusive) of chromium, 0.01 wt % or less (0% inclusive) of boron, 0.1 wt % or less (0% exclusive) of nitrogen, and a balance amount of Fe and inevitable impurities, has an index of sensitivity of 3.4 or less, the index of sensitivity being represented by the following relational expression (1): [Relational expression 1]?0.451+34.131*P+111.152*Al?799.483*B+0.526*Cr?3.4 (wherein [P], [Al], [B] and [Cr] each mean a wt % of corresponding elements), and contains a microstructure with austenite at an area fraction of 95% or greater therein.

Abstract: A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.