Abstract: A display device comprises a first electrode, a second electrode disposed to be spaced apart from the first electrode and face the first electrode, a first insulating layer disposed to cover the first electrode and the second electrode, a second insulating layer disposed on at least a part of the first insulating layer and exposing at a part of a region where the first electrode and the second electrode overlaps the first insulating layer and at least one light emitting element on the exposed first insulating layer between the first electrode and the second electrode, wherein the second insulating layer includes at least one opening exposing the first insulating layer and disposed to be spaced apart from each other on a region where the first electrode and the second electrode face each other, and a bridge portion between the openings, and the light emitting element is disposed on the opening.

Abstract: Provided are a liquid formulation of protein and a method of preparing the same. According to a liquid formulation containing a high concentrate of eflapegrastim and a method of preparing the same, the liquid formulation may have excellent solubility and stability, may have a high concentration of protein, and may be injected in a patient-friendly manner due to reduced irritation/pain at the administration site or patient discomfort.

Abstract: A battery module ac includes a cell stack in which a plurality of battery cells are vertically stacked; a module housing including a base plate supporting the cell stack, and a pair of side plates covering both side portions of the cell stack and each including a spark direction changing portion formed by bending an end portion of the side plate in a longitudinal direction of the side plate toward the cell stack; and a bus bar frame assembly covering an opening portion formed on a side of the module housing in a longitudinal direction of the module housing, the bus bar frame assembly including a bus bar frame coupled to a side of the cells tack in a longitudinal direction of the cell stack and a bus bar located on the bus bar frame and coupled to an electrode lead of the battery cell.

Abstract: A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: A battery pack includes a sub-pack including a plurality of battery modules that are located adjacent to one another; a duct coupled to a side of the sub-pack in a width direction of the sub-pack; and a duct cover covering a duct opening portion formed on a side of the duct in a longitudinal direction of the duct, the duct cover including a filter having a mesh structure.

Abstract: A battery module includes a cell stack in which a plurality of battery cells are vertically stacked; a module housing including a base plate supporting the cell stack and a pair of side plates covering both side portions of the cell stack; a bus bar frame assembly covering an opening portion formed on a side of the module housing in a longitudinal direction of the module housing; and a plurality of spark delay portions protruding from an inner surface of each of the pair of side plates and spaced apart from one another in a height direction of the side plate.

Abstract: A display device includes a first electrode and a second electrode that are spaced apart from and facing each other; a light-blocking layer disposed above the first electrode and the second electrode; and at least one light-emitting element disposed between the first electrode and the second electrode. The light-blocking layer includes a light-blocking portion absorbing light and an opening pattern. The light-blocking portion includes an area partially overlapping the first electrode and the second electrode. The at least one opening pattern exposes portions of the first and second electrodes facing each other and at least a portion of an area between the first and second electrodes facing each other. The at least one light-emitting element overlaps the at least one opening pattern.

Abstract: Provided are a high-strength steel sheet having excellent bendability and formability, and a method for manufacturing same. The steel sheet includes: 0.05 to 0.12% of carbon (C), 2.0 to 3.0% of manganese (Mn), 0.5% or less (excluding 0%) of silicon (Si), 1.0% or less (excluding 0%) of chromium (Cr), 0.1% or less (excluding 0%) of niobium (Nb), 0.1% or less (excluding 0%) of titanium (Ti), 0.0025% or less (excluding 0%) of boron (B), 0.02 to 0.05% of aluminum (sol.Al), 0.05% or less (excluding 0%) of phosphorus (P), 0.01% or less (excluding 0%) of sulfur (S), 0.01% or less (excluding 0%) of nitrogen (N), with a balance of Fe and inevitable impurities, and 35 to 50% of ferrite and 35 to 45% of bainite, and a balance of martensite, the ferrite comprising, by area fraction: 8 to 15% of non-recrystallized ferrite and 27 to 35% of recrystallized ferrite, as a microstructure.

Abstract: Provided according to one embodiment of the present invention are a non-magnetic steel material and a method for manufacturing the same. The steel material comprises 15-27 wt % of manganese, 0.1-1.1 wt % of carbon, 0.05-0.50 wt % of silicon, 0.03 wt % or less (0% exclusive) of phosphorus, 0.01 wt % or less (0% exclusive) of sulfur, 0.050 wt % or less (0% exclusive) of aluminum, 5 wt % or less (0% inclusive) of chromium, 0.01 wt % or less (0% inclusive) of boron, 0.1 wt % or less (0% exclusive) of nitrogen, and a balance amount of Fe and inevitable impurities, has an index of sensitivity of 3.4 or less, the index of sensitivity being represented by the following relational expression (1): [Relational expression 1]?0.451+34.131*P+111.152*Al?799.483*B+0.526*Cr?3.4 (wherein [P], [Al], [B] and [Cr] each mean a wt % of corresponding elements), and contains a microstructure with austenite at an area fraction of 95% or greater therein.

Abstract: A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

Abstract: A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.

Abstract: Provided is a high-strength steel sheet and a method for manufacturing same, wherein the high-strength steel sheet is a material suitable for automobile structural members and has excellent moldability, such as hole expandability, through the improvement of ductility, while having a low yield ratio and high strength.

Abstract: Provided is a high-strength steel sheet suitable for automobile structural members, etc., and a method for manufacturing same, wherein the high-strength steel sheet has a low yield ratio and high strength and has excellent formability through improvement of ductility that may prevent processing defects such as cracks, wrinkles, or the like, during press forming.

Abstract: A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.

Abstract: The present invention relates to a high temperature-superconducting wire having a superconducting layer laminated thereon and a method of manufacturing the same. The method includes: preparing a pair of superconducting wires each of which includes a metal substrate, a buffer layer, a superconducting layer, and a protective layer; laminating the pair of superconducting wires to allow respective protective layers to face each other; performing thermal treatment to the laminated superconducting wires to join the protective layers together; separating the metal substrate and the buffer layer from the superconducting layer on one side; and forming a protective layer on an upper part of the superconducting layer having a surface exposed.

Abstract: A method of manufacturing a semiconductor device includes forming a first through via surrounded by a liner in a first semiconductor substrate, first-recessing the semiconductor substrate to expose a first portion of the liner covering an end portion of the first through via, and forming a first diffusion barrier layer covering the first-recessed first semiconductor substrate and exposing a second portion of the liner. The method also includes removing the second portion of the liner and second-recessing the first diffusion barrier layer. The method further includes forming a second diffusion barrier layer that covers the second-recessed first diffusion barrier layer and a top portion of the liner from which the second portion is removed and exposes a top surface of the end portion of the first through via.

Abstract: A high-strength austenite-based high-manganese steel material and a manufacturing method for the same, the steel material comprising: manganese (Mn): 20 to 23 wt %, carbon (C): 0.3 to 0.5 wt %, silicon (Si): 0.05 to 0.50 wt %, phosphorus (P): 0.03 wt % or less, sulfur (S): 0.005 wt % or less, aluminum (Al): 0.050 wt % or less, chromium (Cr): 2.5 wt % or less, boron (B): 0.0005 to 0.01 wt %, nitrogen (N): 0.03 wt % or less, and a balance of iron (Fe) and other inevitable impurities, wherein stacked defect energy (SFE) represented by the following relationship 1 is 3.05 mJ/m2 or more, and a microstructure comprises 95 area % or more (including 100 area %) of austenite, and comprises 6 area % or more of strain grain boundaries in an austenite recrystallized grain, is provided. SFE(mJ/m2)=?24.2+0.950*Mn+39.0*C?2.53*Si?5.50*Al?0.765*Cr??[Relationship 1] where Mn, C, Cr, Si, and Al denote weight percent of respective components.

Abstract: There are provided a semiconductor and a method of fabricating the same. The semiconductor device may include a second semiconductor substrate directly bonded to a first semiconductor substrate. The first semiconductor substrate may include a first through via with an end portion protruding through a first top surface, the first top surface being a top surface of a first semiconductor substrate body, a liner extending to partially expose a side surface of the end portion of the first through via, and a first diffusion barrier layer. The liner may include a third top surface that is positioned at a lower height than a second top surface, the second top surface being a top surface of the end portion of the first through via and substantially equal to the first top surface. Alternatively, the liner may include a third surface positioned at a height that is lower than the second top surface and higher than the first top surface.

Abstract: A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.