Patents by Inventor Sung-Min Kim

Sung-Min Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250141290
    Abstract: A method of manufacturing a rotor for a motor and a rotor for a motor manufactured by the same are disclosed. The method includes providing a rotor plate, a rotor core, and a plurality of permanent magnets, integrally coupling the rotor core to the rotor plate. The method also includes forming a molding part by molding a resin composition for a molding material on the plurality of permanent magnets so that the molding part is shaped to integrally connect the plurality of permanent magnets arranged in a circumferential direction of the rotor. The rotor is manufactured to have a configuration in which the rotor plate, the rotor core, the plurality of permanent magnets, and the formed molding part are integrated.
    Type: Application
    Filed: March 13, 2024
    Publication date: May 1, 2025
    Inventors: Sung Min Kim, Dong Kyu Won, Pung Koc Hwang, Ji Seung Park, Byung Seon Kong
  • Patent number: 12266656
    Abstract: A semiconductor device includes a substrate with first and second regions separated from each other, a laminate structure including at least one sacrificial layer and at least one active layer alternately stacked on the substrate, a first isolation insulating layer on the laminate structure on the first region, a second isolation insulating layer on the laminate structure on the second region, the second isolation insulating layer having a same thickness as the first isolation insulating layer, a first upper active pattern spaced apart from the first isolation insulating layer, a first gate electrode surrounding at least a portion of the first upper active pattern, a second upper active pattern spaced apart from the second isolation insulating layer, and a second gate electrode surrounding at least a portion of the second upper active pattern, wherein top surfaces of the first and second isolation insulating layers are at different heights.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: April 1, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Mun Hyeon Kim, Sung Min Kim, Dae Won Ha
  • Publication number: 20250079205
    Abstract: A equipment front-end module (EFEM) includes: a body part; load ports in the body part and having loaded therein front opening unified pods (FOUPs), where wafers are stored; doors in the body part, movable in a first direction, and opening and closing entrances of the load ports; a fan unit on the load ports and providing an airflow in a direction opposite of the first direction; a first screen plate between the fan unit and the load ports, attached to the body part, and including a slant edge, that extends in a second direction that intersects the first direction; and second screen plates attached to the doors and extending in the first direction from upper surfaces of the doors, wherein the first screen plate changes a direction of the airflow, and the second screen plates prevent the airflow from entering the load ports.
    Type: Application
    Filed: May 30, 2024
    Publication date: March 6, 2025
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Pyeong Gyu SONG, Sung MIn Kim, Moo Young Lim, Ji Yong Lee, Sung Girl Lim
  • Patent number: 12243754
    Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.
    Type: Grant
    Filed: November 2, 2021
    Date of Patent: March 4, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Do Young Choi, Sung Min Kim, Cheol Kim, Hyo Jin Kim, Dae Won Ha, Dong Woo Han
  • Patent number: 12206022
    Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: January 21, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun Hom Paak, Sung Min Kim
  • Publication number: 20250022876
    Abstract: A semiconductor device including: a lower semiconductor substrate; an upper semiconductor substrate overlapping the lower semiconductor substrate, the upper semiconductor substrate including a first surface and a second surface opposite to the first surface; an upper gate structure on the first surface of the upper semiconductor substrate; a first interlayer insulation film which covers the upper gate structure, wherein the first interlayer insulation film is between the lower semiconductor substrate and the upper semiconductor substrate; and an upper contact connected to the lower semiconductor substrate, wherein the upper contact is on a side surface of the upper gate structure, wherein the upper contact includes a first portion penetrating the upper semiconductor substrate, and a second portion having a side surface adjacent to the side surface of the upper gate structure, and a width of the first portion decreases toward the second surface.
    Type: Application
    Filed: September 30, 2024
    Publication date: January 16, 2025
    Inventors: Sung Min KIM, Dae Won HA
  • Publication number: 20240401987
    Abstract: An embodiment may provide a sensing device comprising: a rotor; a stator arranged so as to correspond to the rotor; a first collector arranged above the stator and a second collector arranged under the stator; and a first sensor and a second sensor arranged between the first collector and the second collector, wherein the first collector includes a first unit collector and a second unit collector, and a sensing value of at least one of the first sensor by magnetic flux and the second sensor by magnetic flux is compensated for on the basis of an offset obtained by multiplying, by a compensation coefficient, a difference value between a sensing value of the first sensor transmitted to the first unit collector and a sensing value of the second sensor transmitted to the second unit collector, the sensing value of the at least one of the first sensor and the second sensor being compensated for by selecting any one of a first offset and a second offset on the basis of a first difference value between the first offs
    Type: Application
    Filed: October 5, 2022
    Publication date: December 5, 2024
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Chang Hwan LEE, Sung Min KIM
  • Publication number: 20240371999
    Abstract: A semiconductor device includes a base substrate, a first electrode plate on the base substrate, a first power rail on the first electrode plate, the first power rail extending in a first horizontal direction and overlapping the first electrode plate in a vertical direction, a second power rail on the first electrode plate, the second power rail extending in the first horizontal direction and overlapping the first electrode plate in the vertical direction, and the second power rail being spaced apart from the first power rail in a second horizontal direction different from the first horizontal direction, a first power rail contact electrically connecting the first electrode plate and the first power rail, an insulating layer on the base substrate to surround the first electrode plate, the first power rail, and the second power rail, and a gate electrode extending in the second horizontal direction on the insulating layer.
    Type: Application
    Filed: July 11, 2024
    Publication date: November 7, 2024
    Inventor: Sung Min KIM
  • Patent number: 12132044
    Abstract: A semiconductor device including: a lower semiconductor substrate; an upper semiconductor substrate overlapping the lower semiconductor substrate, the upper semiconductor substrate including a first surface and a second surface opposite to the first surface; an upper gate structure on the first surface of the upper semiconductor substrate; a first interlayer insulation film which covers the upper gate structure, wherein the first interlayer insulation film is between the lower semiconductor substrate and the upper semiconductor substrate; and an upper contact connected to the lower semiconductor substrate, wherein the upper contact is on a side surface of the upper gate structure, wherein the upper contact includes a first portion penetrating the upper semiconductor substrate, and a second portion having a side surface adjacent to the side surface of the upper gate structure, and a width of the first portion decreases toward the second surface.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: October 29, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Min Kim, Dae Won Ha
  • Publication number: 20240344772
    Abstract: The present disclosure relates to a heat sink apparatus including a heating body that receives heat from an external heat source, a supplier that is supported by the heating body and supplies a cooling fluid, and a jet ejection part that is provided in the supplier and injects the cooling fluid supplied by the supplier toward the heating body.
    Type: Application
    Filed: April 2, 2024
    Publication date: October 17, 2024
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Sung-Min KIM, Hyeong-Geun KIM, Santhosh SENGUTTUVAN, Hong-Cheol SHIN, Won-Woo CHOI
  • Patent number: 12112128
    Abstract: The present invention relates to a method of generating a word embedding library, including: receiving, by a processor, original text composed of Hangul through an input interface; segmenting, by the processor, the original text by morpheme, combining segmented morphemes step by step according to a preset rule, and matching a tag to a combination of step-by-step morphemes according to a morphological attribute or a syntactic attribute of the combination of step-by-step morphemes; and generating, by the processor, a word embedding library by classifying the morphemes included in the original text based on the tag matched to the combination of step-by-step morphemes.
    Type: Grant
    Filed: September 28, 2022
    Date of Patent: October 8, 2024
    Assignee: KOREA ELECTRIC POWER CORPORATION
    Inventors: Sung Min Kim, Hye Won Lim, Yoon Bo Shim, Yui Ha, Yoon Seok Choi
  • Patent number: 12080795
    Abstract: A semiconductor device includes a base substrate, a first electrode plate on the base substrate, a first power rail on the first electrode plate, the first power rail extending in a first horizontal direction and overlapping the first electrode plate in a vertical direction, a second power rail on the first electrode plate, the second power rail extending in the first horizontal direction and overlapping the first electrode plate in the vertical direction, and the second power rail being spaced apart from the first power rail in a second horizontal direction different from the first horizontal direction, a first power rail contact electrically connecting the first electrode plate and the first power rail, an insulating layer on the base substrate to surround the first electrode plate, the first power rail, and the second power rail, and a gate electrode extending in the second horizontal direction on the insulating layer.
    Type: Grant
    Filed: November 3, 2021
    Date of Patent: September 3, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sung Min Kim
  • Publication number: 20240288226
    Abstract: The present invention relates to a heat sink with a multilayer channel structure, the heat sink includes a main body part which is provided with an inlet through which a cooling fluid is introduced and an outlet through which the cooling fluid is discharged, a first channel part provided inside the main body part and through which the cooling fluid flows, and a second channel part which is provided inside the main body part and through which the cooling fluid flows, wherein the second channel part is disposed to be stacked on the first channel part, the first channel part and the second channel part extend in different directions, and the second channel part communicates with the first channel part.
    Type: Application
    Filed: February 14, 2024
    Publication date: August 29, 2024
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Sung-Min KIM, Hong-Cheol SHIN, Hyeong-Geun KIM, Won-Woo CHOI, Santhosh SENGUTTUVAN
  • Patent number: 12034384
    Abstract: Provided is an electricity generating module. The electricity generating module comprises: a cylinder; a piston that reciprocates inside the cylinder; and a power generating fiber of which one end is fixed to the piston and the other end is fixed to the cylinder, and of which the length varies according to the reciprocating of the piston, wherein, as the length of the power generating fiber varies, a potential value of the power generating fiber varies, and electricity is generated by using the varied potential value of the power generating fiber.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: July 9, 2024
    Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Seon Jeong Kim, Keon Jung Kim, Tae Jin Mun, Sung Min Kim
  • Patent number: 12009346
    Abstract: A device includes a lower semiconductor substrate, a lower gate structure on the lower semiconductor substrate, the lower gate structure comprises a lower gate electrode, a lower interlayer insulating film on the lower semiconductor substrate, an upper semiconductor substrate on the lower interlayer insulating film, an upper gate structure on the upper semiconductor substrate, and an upper interlayer insulating film on the lower interlayer insulating film, the upper interlayer insulating film covers sidewalls of the upper semiconductor substrate The upper gate structure comprises an upper gate electrode extending in a first direction and gate spacers along sidewalls of the upper gate electrode. The upper gate electrode comprises long sidewalls extending in the first direction and short sidewalls in a second direction The gate spacers are on the long sidewalls of the upper gate electrode and are not disposed on the short sidewalls of the upper gate electrode.
    Type: Grant
    Filed: June 2, 2023
    Date of Patent: June 11, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung Min Kim, Dae Won Ha
  • Patent number: 11996736
    Abstract: An embodiment may provide a sensing device including a stator including a stator tooth and a rotor including a magnet, wherein the stator tooth includes a first stator tooth and a second stator tooth disposed inside the first stator tooth, the first stator tooth includes a plurality of first teeth, the second stator tooth includes a plurality of second teeth, the first tooth overlaps the second tooth in a radial direction from a center of the stator, the stator includes a stator holder and a stator body which is coupled to the stator holder and on which the first stator tooth and the second stator tooth are disposed, the stator body includes a protrusion, and the protrusion is in contact with a lower end of the first stator tooth or a lower end of the second stator tooth.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: May 28, 2024
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Myung Chul Woo, Sung Min Kim
  • Patent number: 11975076
    Abstract: The present invention relates to antibody-drug conjugates (ADCs) wherein a plurality of active agents are conjugated to an antibody through at least one branched linker. The branched linker may comprise a branching unit, and two active agents are coupled to the branching unit through a secondary linker and the branching unit is coupled to the antibody by a primary linker. The active agents may be the same or different. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g., 2-4 branched linkers, which may each be coupled to a different C-terminal cysteine of a heavy or light chain of the antibody. The branched linker may comprise one active agent coupled to the branching unit by a first branch and a second branch that comprises a polyethylene glycol moiety coupled to the branching unit. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: May 7, 2024
    Assignee: LegoChem Biosciences, Inc.
    Inventors: Yong Zu Kim, Yeong Soo Oh, Jeiwook Chae, Ho Young Song, Chul-Woong Chung, Yun Hee Park, Hyo Jung Choi, Kyung Eun Park, Hyoungrae Kim, Jinyeong Kim, Ji Young Min, Sung Min Kim, Byung Soo Lee, Dong Hyun Woo, Ji Eun Jung, Su In Lee
  • Publication number: 20240130934
    Abstract: Disclosed is a bulk block for manufacturing a prosthesis having high aesthetics and processability required for one-day dental prosthetic materials, which is a dental composite bulk block comprising a glass ceramic matrix and a polymer, wherein the glass ceramic matrix consists of an amorphous glass matrix and a crystalline phase dispersed in the glass matrix, the crystalline phase comprises as a main crystalline phase at least one selected from a leucite crystalline phase and a lithium disilicate crystalline phase, and has an average particle diameter of 0.01-1.0 ?m, and the polymer is included in an amount of 20-40 wt % with respect to the weight of the total bulk block. The bulk block has the advantages of improved mechanical properties, being capable of preventing microleakage, exhibiting excellent aesthetics, and enabling machining.
    Type: Application
    Filed: December 21, 2023
    Publication date: April 25, 2024
    Applicant: HASS CO., LTD.
    Inventors: Hyung Bong LIM, Sung Min KIM, Sung Ho HA, Moon Chang KIM, Hwan Soon KOH
  • Publication number: 20240104300
    Abstract: The present invention relates to a method of generating a word embedding library, including: receiving, by a processor, original text composed of Hangul through an input interface; segmenting, by the processor, the original text by morpheme, combining segmented morphemes step by step according to a preset rule, and matching a tag to a combination of step-by-step morphemes according to a morphological attribute or a syntactic attribute of the combination of step-by-step morphemes; and generating, by the processor, a word embedding library by classifying the morphemes included in the original text based on the tag matched to the combination of step-by-step morphemes.
    Type: Application
    Filed: September 28, 2022
    Publication date: March 28, 2024
    Inventors: Sung Min KIM, Hye Won LIM, Yoon Bo SHIM, Yui HA, Yoon Seok CHOI
  • Publication number: 20240082345
    Abstract: Provided is a peptide composition for preventing or treating Alzheimer's dementia. A peptide or a salt substituent thereof according to the presently claimed subject matter exhibits effects such as suppression of LPS-mediated cytokine production, suppression of LPS-induced neuroinflammation, amelioration of cognitive impairment, suppression of beta amyloid or tau protein aggregation, and suppression of neuronal loss. The polypeptide or the salt substituent thereof can permeate the blood-brain barrier, and thus, is expected to be usefully used for preventing or treating Alzheimer's dementia.
    Type: Application
    Filed: August 25, 2021
    Publication date: March 14, 2024
    Applicant: HLB SCIENCE INC.
    Inventors: Yeong Min PARK, Wahn Soo CHOI, Seung-Hyun LEE, In Duk JUNG, Yong Joo KIM, Seung Jun LEE, Sung Min KIM, Mi Suk LEE, Hee Jo PARK, Seung Pyo CHOI, Minho MOON, Soo Jung SHIN, Sujin KIM, Yong Ho PARK, Jae-Yong PARK, Kun Ho LEE