Abstract: A digital counter includes: a plurality of flip-flops configured to generate a plurality of count signals; and a controller configured to prevent level transition of an input terminal of a flip-flop to generate a count signal corresponding to a least significant bit (LSB), in response to a clock signal and a count end signal.

Abstract: A semiconductor memory device includes a first fuse having one end coupled with a first bit line and configured to be programmed with a data, a second fuse having one end coupled with a second bit line and configured to be programmed with the data; a program controller coupled with the other ends of the first fuse and the second fuse and configured to perform a program operation on at least one of the first fuse and the second fuse in response to a program voltage, and a read controller coupled with the other ends of the first fuse and the second fuse and configured to perform a read operation on the first fuse and the second fuse in response to a read voltage.

Abstract: A semiconductor memory device includes a memory block configured to store a data inputted/outputted through a data transfer line, a data output block configured to output the data loaded on the data transfer line in response to a source clock, wherein the data output block is controlled to be coupled with the data transfer line in response to a write operation signal, a write operation signal generation block configured to generate the write operation signal in response to an operation selection signal and a reference clock lagging behind the source clock by a set time, and a data input block configured to load the data on the data transfer line in response to the write operation signal.

Abstract: A semiconductor memory device includes a first fuse having one end coupled with a first bit line and configured to be programmed with a data, a second fuse having one end coupled with a second bit line and configured to be programmed with the data; a program controller coupled with the other ends of the first fuse and the second fuse and configured to perform a program operation on at least one of the first fuse and the second fuse in response to a program voltage, and a read controller coupled with the other ends of the first fuse and the second fuse and configured to perform a read operation on the first fuse and the second fuse in response to a read voltage.

Abstract: A semiconductor device with OTP memory cell includes a first switching unit for transferring a first bias voltage, a first MOS transistor having a first gate coupled to a first gate signal and a first terminal coupled to the first bias voltage by the first switching unit, and a second switching unit for coupling a second terminal of the first MOS transistor to a first bit line.

Abstract: A semiconductor memory device includes a memory block configured to store a data inputted/outputted through a data transfer line, a data output block configured to output the data loaded on the data transfer line in response to a source clock, wherein the data output block is controlled to be coupled with the data transfer line in response to a write operation signal, a write operation signal generation block configured to generate the write operation signal in response to an operation selection signal and a reference clock lagging behind the source clock by a set time, and a data input block configured to load the data on the data transfer line in response to the write operation signal.

Abstract: Disclosed is a flash analog to digital converter (ADC) capable of reducing area requirements and using successive approximation. The ADC includes a reference voltage generating unit receiving an external voltage and outputting M reference voltages. A reference voltage selecting unit outputs N reference voltages less than the number of the voltages outputted by the reference voltage generating unit according to a supplied control signal. A digital signal output unit compares the N reference voltages outputted by the reference voltage selecting unit with an external analog input signal and outputs the comparison result as an N-bit digital signal.

Abstract: Disclosed is a flash analog to digital converter (ADC) capable of reducing area requirements and using successive approximation. The ADC includes a reference voltage generating unit receiving an external voltage and outputting M reference voltages. A reference voltage selecting unit outputs N reference voltages less than the number of the voltages outputted by the reference voltage generating unit according to a supplied control signal. A digital signal output unit compares the N reference voltages outputted by the reference voltage selecting unit with an external analog input signal and outputs the comparison result as an N-bit digital signal.

Abstract: An input/output (I/O) line sense amplifier includes a first sense amplifier configured to amplify a signal of an I/O line in response to a strobe signal, and a second sense amplifier configured to latch and amplify an output signal of the first sense amplifier in response to the strobe signal.