Abstract: An inductor includes a support having first and second coils formed on first and second surfaces thereof, respectively; a body embedding the support therein so that end portions of the first and second coils are exposed through first and second surfaces of the body opposing each other, and including a first magnetic part disposed in cores of the first and second coils and on upper and lower surfaces of the first and second coils, respectively, and second magnetic parts disposed on upper and lower surfaces of the first magnetic part, respectively; and first and second external electrodes formed on outer surfaces of the body to be electrically connected to the end portions of the first and second coils, respectively. The second magnetic part has a content of a hardening accelerator greater than that of the first magnetic part.

Abstract: Contacts to peripheral devices extending through multiple tier structures of a three-dimensional memory device can be formed with minimal additional processing steps. First peripheral via cavities through a first tier structure can be formed concurrently with formation of first memory openings. Sacrificial via fill structures can be formed in the first peripheral via cavities concurrently with formation of sacrificial memory opening fill structures that are formed in the first memory openings. Second peripheral via cavities through a second tier structure can be formed concurrently with formation of word line contact via cavities that extend to top surfaces of electrically conductive layers in the first and second tier structures. After removal of the sacrificial via fill structures, the first and second peripheral via cavities can be filled with a conductive material to form peripheral contact via structures concurrently with formation of word line contact via structures.

Abstract: An inductor includes a support having first and second coils formed on first and second surfaces thereof, respectively; a body embedding the support therein so that end portions of the first and second coils are exposed through first and second surfaces of the body opposing each other, and including a first magnetic part disposed in cores of the first and second coils and on upper and lower surfaces of the first and second coils, respectively, and second magnetic parts disposed on upper and lower surfaces of the first magnetic part, respectively; and first and second external electrodes formed on outer surfaces of the body to be electrically connected to the end portions of the first and second coils, respectively. The second magnetic part has a content of a hardening accelerator greater than that of the first magnetic part.

Abstract: Contacts to peripheral devices extending through multiple tier structures of a three-dimensional memory device can be formed with minimal additional processing steps. First peripheral via cavities through a first tier structure can be formed concurrently with formation of first memory openings. Sacrificial via fill structures can be formed in the first peripheral via cavities concurrently with formation of sacrificial memory opening fill structures that are formed in the first memory openings. Second peripheral via cavities through a second tier structure can be formed concurrently with formation of word line contact via cavities that extend to top surfaces of electrically conductive layers in the first and second tier structures. After removal of the sacrificial via fill structures, the first and second peripheral via cavities can be filled with a conductive material to form peripheral contact via structures concurrently with formation of word line contact via structures.

Abstract: A method is provided that includes forming a dielectric material above a substrate, forming a hole in the dielectric material, the hole disposed in a first direction, forming a word line layer above the substrate via the hole, the word line layer disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material on a sidewall of the hole, forming a local bit line in the hole, and forming a memory cell including the nonvolatile memory material at an intersection of the local bit line and the word line layer.

Abstract: A contact via cavity can be filled with a lower structure and an upper structure. The lower structure can be a conductive structure that is formed by depositing a conformal conductive material, and subsequently removing an upper portion of the conformal conductive material. A disposable material portion can be formed at a bottom of the cavity to protect the bottom portion of the conformal conductive layer during removal of the upper portion. After removal of the disposable material, at least one conductive material can fill the remainder of the cavity to form the upper structure. The upper structure and the lower structure collectively constitute a contact via structure. Alternatively, the lower structure can be a dielectric spacer with an opening therethrough. The upper structure can be a conductive structure that extends through the dielectric spacer, and provides an electrically conductive vertical connection.

Abstract: A contact via cavity can be filled with a lower structure and an upper structure. The lower structure can be a conductive structure that is formed by depositing a conformal conductive material, and subsequently removing an upper portion of the conformal conductive material. A disposable material portion can be formed at a bottom of the cavity to protect the bottom portion of the conformal conductive layer during removal of the upper portion. After removal of the disposable material, at least one conductive material can fill the remainder of the cavity to form the upper structure. The upper structure and the lower structure collectively constitute a contact via structure. Alternatively, the lower structure can be a dielectric spacer with an opening therethrough. The upper structure can be a conductive structure that extends through the dielectric spacer, and provides an electrically conductive vertical connection.

Abstract: There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.

Abstract: There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.

Abstract: A display apparatus having a displaying part, includes a video processing part to process an input video signal into a format which can be displayed on the displaying part, and a controlling part to determine whether a video image displayed on the displaying part is a still image, and if it is determined that the video image is the still image, to control the video processing part to display the video image according to the input video signal and a predetermined after-image prevention image alternately on the displaying part. Thus, the present general inventive concept provides a display apparatus which is capable of removing an after-image effect occurring in a display panel effectively, and a control method thereof.

Abstract: A method of preventing image burn-in of a display apparatus to display an image includes detecting pixel data of a pixel of the image, calculating OSD data corresponding to the detected pixel data, generating the calculated OSD data, and merging the OSD data to the pixel data and displaying the merged OSD data in the pixel for a predetermined refresh period of time.

Abstract: A mobile communication device is provided. The mobile communication device includes a terminal body, and a speaker module located in the terminal body. The speaker module includes an enclosure located in the terminal body, the enclosure defining a chamber therein, and a speaker having a front surface and a rear surface, the speaker being located in the enclosure such that the front surface of the speaker is exposed from the enclosure and the rear surface thereof is positioned within the chamber, to allow a sound generated from the rear surface to resonate within the chamber. A mutual interference between the sound generated from the front side of the sound emission part and the sound emitted from the rear side thereof can be reduced to thereby improve the performance of the middle and low sound.

Abstract: A plasma etching method includes: plasma etching a silicon oxide film to be etched that is positioned under a multi-layer resist mask by using the multi-layer resist mask formed on a substrate to be processed; and plasma etching a glass based film positioned under the silicon oxide film by using the multi-layer resist mask. In the method a gaseous mixture of C4F6 gas and C3F8 gas as a processing gas is used in the plasma etching of the glass based layer.

Abstract: Provided is a method for fabricating a semiconductor device having reduced contact resistance. In the method, gate patterns defining a narrow opening and a wide opening are formed having an upper portion of a predetermined region of a semiconductor substrate. After gate spacers are formed on sidewalls of the gate patterns, an ion implantation process that uses the gate patterns and the gate spacers as an ion mask is performed to form a plug doped region in a portion of the semiconductor substrate that is located below the wide opening. At this point, the gate spacers are formed to expose a portion of a bottom surface of the wide opening and to fill a lower portion of the narrow opening.

Abstract: A plasma etching method includes: plasma etching a silicon oxide film to be etched that is positioned under a multi-layer resist mask by using the multi-layer resist mask formed on a substrate to be processed; and plasma etching a glass based film positioned under the silicon oxide film by using the multi-layer resist mask. In the method a gaseous mixture of C4F6 gas and C3F8 gas as a processing gas is used in the plasma etching of the glass based layer.

Abstract: A mobile communication device is provided. The mobile communication device includes a terminal body, and a speaker module located in the terminal body. The speaker module includes an enclosure located in the terminal body, the enclosure defining a chamber therein, and a speaker having a front surface and a rear surface, the speaker being located in the enclosure such that the front surface of the speaker is exposed from the enclosure and the rear surface thereof is positioned within the chamber, to allow a sound generated from the rear surface to resonate within the chamber. A mutual interference between the sound generated from the front side of the sound emission part and the sound emitted from the rear side thereof can be reduced to thereby improve the performance of the middle and low sound.

Abstract: Provided is a method for fabricating a semiconductor device having reduced contact resistance. In the method, gate patterns defining a narrow opening and a wide opening are formed having an upper portion of a predetermined region of a semiconductor substrate. After gate spacers are formed on sidewalls of the gate patterns, an ion implantation process that uses the gate patterns and the gate spacers as an ion mask is performed to form a plug doped region in a portion of the semiconductor substrate that is located below the wide opening. At this point, the gate spacers are formed to expose a portion of a bottom surface of the wide opening and to fill a lower portion of the narrow opening.

Abstract: A hermetic compressor comprising a discharge valve, and a stopper for restricting an opening degree of the discharge valve. The discharge valve includes a body portion configured to cover a discharge port formed at a valve plate, and a first protrusion extending from the body portion. The stopper includes an inclined portion for supporting the body portion, and a second protrusion extending a support portion thereof. In this case, a distance between the first and second protrusions is shorter than a distance between the inclined portion and body portion. With such first and second protrusions, an opening operation of the discharge valve is gradually achieved.

Abstract: Disclosed is a bracket for fixing a compressor capable of reducing vibration generated due to resonance occurring when a specific frequency generated from the compressor matches with a natural frequency of the bracket for fixing the compressor. The bracket for fixing the compressor includes a body section extending in one direction and a folding section coupled so as to change the natural frequency of the bracket. The bracket for fixing the compressor includes a body section extending in one direction and a weight coupled to the body section so as to reduce displacement when the bracket is vibrated.

Abstract: A mobile communication device is provided. The mobile communication device includes a terminal body, and a speaker module located in the terminal body. The speaker module includes an enclosure located in the terminal body, the enclosure defining a chamber therein, and a speaker having a front surface and a rear surface, the speaker being located in the enclosure such that the front surface of the speaker is exposed from the enclosure and the rear surface thereof is positioned within the chamber, to allow a sound generated from the rear surface to resonate within the chamber. A mutual interference between the sound generated from the front side of the sound emission part and the sound emitted from the rear side thereof can be reduced to thereby improve the performance of the middle and low sound.