Abstract: Disclosed is an image sensing device, including: a pixel array that includes a plurality of unit pixels. A unit pixel in the pixel array may include a plurality of sub-pixels, a first isolation region may be formed in an edge region of a sub-pixel, a second isolation region may extend from the first isolation region toward a central portion of the sub-pixel, the second isolation region may include: a first inner isolation region protruding in a first direction from one region of the first isolation region to the central portion of the sub-pixel, and a second inner isolation region formed on a same straight line as the first inner isolation region and protruding in a second direction from another region of the first isolation region to the central portion of the sub-pixel, and the first inner isolation region and the second inner isolation region may have sharp end portions.

Abstract: Disclosed is an image sensing device including a pixel array including a unit pixel including sub-pixels. A first isolation region is disposed in an edge region of a sub-pixel, a second isolation region extends from the first isolation region to a central portion of the sub-pixel. The second isolation region includes: a first inner isolation region protruding in a first direction from one region of the first isolation region to the central portion of the sub-pixel, and a second inner isolation region formed on a same straight line as the first inner isolation region and protruding in a second direction from another region of the first isolation region to the central portion of the sub-pixel. A first grid is formed in an upper region located above a region between the first inner isolation region and the second inner isolation region, and the first grid includes an air layer.

Abstract: A pipeline system includes a first inverter latch configured to receive plural data entries, and plural second inverter latches coupled to each other in parallel for storing the plural data entries input from the first inverter latch in a distributive manner. Plural first switches are arranged between the first inverter latch and the plural second inverter latches, each first switch configured for controlling transmission of each of the plural data entries from the first inverter latch to one of the plural second inverter latches. Plural second switches are configured to output the plural data entries stored in the plural second inverter latches.

Abstract: An image sensing device for preventing a crosstalk path is disclosed. The image sensing device includes a substrate including a plurality of photoelectric conversion elements, each of which generates and accumulates photocharges corresponding to incident light and a plurality of lenses disposed over the substrate, and arranged to receive the incident light and to direct received incident light to the plurality of photoelectric conversion elements, wherein the plurality of lenses includes a first lens and a second lens that are arranged to contact each other and have different refractive indexes from each other.

Abstract: The present disclosure provides a method for partially reducing vanadium pentoxide (V2O5) using an ammonia solution, wherein ammonia is used to convert vanadium pentoxide (V2O5) powder to ammonia vanadate (NH4VO3), which is an intermediate material, after which the ammonia vanadate is heated under normal or reduced pressure in a nitrogen or argon atmosphere and then maintained for a certain period of time to partially reduce the vanadium pentoxide and thereby produce vanadium dioxide (VO2) powder, and vanadium dioxide (VO2) powder produced thereby.

Abstract: An image sensing device includes: a plurality of photoelectric conversion elements included in a unit pixel and located in a substrate layer; an isolation structure configured to isolate the plurality of photoelectric conversion elements from photoelectric conversion elements included in another unit pixel; a first anti-reflection layer configured to overlap the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer; a light guide disposed between the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer and the first anti-reflection layer; a grid layer configured to overlap the isolation structure; and a second anti-reflection layer disposed to be in contact with the first anti-reflection layer, the light guide, and the grid layer, wherein the light guide includes a material having a refractive index smaller than a refractive index of the first anti-reflection layer.

Abstract: Probe cards that can replace lens units are disclosed. In some implementations, a probe card may include a lens unit through which light irradiated from a light source unit; a jig into which the lens unit is inserted inside, and a holder unit for closely supporting the lens unit.

Abstract: An image sensing device includes a pixel region provided in a first portion of a semiconductor substrate such that photoelectric conversion elements for converting incident light into an electrical signal are disposed in the first portion of the semiconductor substrate, a dummy region located outside the pixel region to surround the pixel region and provided in a second portion of the semiconductor substrate without including a photoelectric conversion element, first microlenses disposed over the first portion of the semiconductor substrate and in the pixel region, the first microlenses configured to converge the incident light onto corresponding photoelectric conversion elements, second microlenses disposed over the second portion of the semiconductor substrate and in the dummy region, the second microlenses isolated from the first microlenses, and at least one alignment pattern disposed in the second portion of semiconductor substrate so as to be aligned with the second microlenses.

Abstract: An image sensing device includes photoelectric conversion elements structured to convert light into electrical signals, and a color filter layer structured to filter incident light towards the photoelectric conversion elements depending on a wavelength range of the incident light corresponding to colors of the incident light to allow the filtered light to be detected by the photoelectric conversion elements corresponding to the colors of the incident light. The color filter layer includes a plurality of first color filters as part of the different filters and structured to allow light at a wavelength range corresponding to a first color and arranged adjacent to each other. A distance between at least one of the first color filters and a corresponding photoelectric conversion element formed below the at least one of the first color filters is different from a distance between the remaining first color filters and corresponding photoelectric conversion elements, respectively.

Abstract: Disclosed is an image sensor having a plurality of groups of pixels, each group of pixels including: first to third image detection color filter sets and a phase difference detection color filter set, which are arranged in a matrix with rows and columns. The phase difference detection color filter set comprises first to fourth phase difference detection color filter pairs arranged in a matrix with rows and columns. The first to fourth phase difference detection color filter pairs comprise first to fourth left phase difference detection color filters positioned on the left of each of the first to fourth phase difference detection color filter pairs and first to fourth right phase difference detection color filters positioned on the right of each of the first to fourth phase difference detection color filter pairs, respectively.

Abstract: The present disclosure relates to an organic electroluminescent compound, and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound of the present disclosure, an organic electroluminescent device having improved driving voltage, luminous efficiency, lifespan characteristic, and/or power efficiency can be provided.

Abstract: An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

Abstract: An image sensor is disclosed. The image sensor includes a pixel region and a shield region. The pixel region includes a first microlens array that includes microlenses arranged in a first direction and a second direction perpendicular to the first direction. The shield region surrounds the pixel region and includes a second microlens array formed in a shape that is obtained when the first microlens array is rotated by a predetermined angle with respect to the first direction.

Abstract: An image sensing device includes a pixel array configured to include a plurality of pixel groups arranged in a matrix structure. Each of the pixel groups includes an optical filter configured to selectively pass incident light, a plurality of photoelectric conversion regions disposed below the optical filter and arranged in a matrix structure, a first isolation structure disposed between the photoelectric conversion regions and other pixel groups, a plurality of second isolation structures disposed between two adjacent photoelectric conversion regions from among the photoelectric conversion regions, and a third isolation structure disposed between the second isolation structures, and configured to interconnect the second isolation structures. The third isolation structure includes a cavity region formed adjacent to contact any one of the photoelectric conversion regions.

Abstract: An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

Abstract: An image sensing device for preventing a crosstalk path is disclosed. The image sensing device includes a substrate including a plurality of photoelectric conversion elements, each of which generates and accumulates photocharges corresponding to incident light and a plurality of lenses disposed over the substrate, and arranged to receive the incident light and to direct received incident light to the plurality of photoelectric conversion elements, wherein the plurality of lenses includes a first lens and a second lens that are arranged to contact each other and have different refractive indexes from each other.

Abstract: An image sensing device includes photoelectric conversion elements structured to convert light into electrical signals, and a color filter layer structured to filter incident light towards the photoelectric conversion elements depending on a wavelength range of the incident light corresponding to colors of the incident light to allow the filtered light to be detected by the photoelectric conversion elements corresponding to the colors of the incident light. The color filter layer includes a plurality of first color filters as part of the different filters and structured to allow light at a wavelength range corresponding to a first color and arranged adjacent to each other. A distance between at least one of the first color filters and a corresponding photoelectric conversion element formed below the at least one of the first color filters is different from a distance between the remaining first color filters and corresponding photoelectric conversion elements, respectively.

Abstract: Disclosed is an image sensor having a plurality of groups of pixels, each group of pixels including: first to third image detection color filter sets and a phase difference detection color filter set, which are arranged in a matrix with rows and columns. The phase difference detection color filter set comprises first to fourth phase difference detection color filter pairs arranged in a matrix with rows and columns. The first to fourth phase difference detection color filter pairs comprise first to fourth left phase difference detection color filters positioned on the left of each of the first to fourth phase difference detection color filter pairs and first to fourth right phase difference detection color filters positioned on the right of each of the first to fourth phase difference detection color filter pairs, respectively.

Abstract: An image sensing device in which overlay pixels are formed in a dummy pixel region is disclosed. The image sensing device includes a first dummy pixel region including a first micro-lens, a second dummy pixel region surrounding the first dummy pixel region and formed without micro-lens, and a third dummy pixel region surrounding the second dummy pixel region and including a plurality of second micro-lenses. A center point of the first micro-lens is aligned with a center point of the first photoelectric conversion element, and a center point of the second micro-lenses is shifted in a certain direction from a center point of the third photoelectric conversion elements.

Abstract: Disclosed is a system and method for allowing analysis results of scan data to have supplemental geometry and various measurements generated from the supplemental geometry or mutual common relations between geometric tolerances, and when the scan data changes, the analysis results according to the related data are recalculated in real time in order to simplify the repetitive inspection process according to the scan data changes.