Patents by Inventor Sung-Yeon Kim

Sung-Yeon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11001956
    Abstract: A washing machine and a method for controlling the same are provided. The washing machine includes a first rotary tub, a first driver configured to rotate the first rotary tub, a second rotary tub, a second driver configured to rotate the second rotary tub, and at least one processor configured to control the first driver and the second driver in a manner that the first rotary tub and the second rotary tub rotate. If a rotation speed of the first rotary tub is equal to or higher than a first reference speed, the at least one processor controls the second driver such that a rotation speed of the second rotary tub increases to a target speed and then decreases.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: May 11, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Jin Cho, Do-Yeon Kim, Suk Bae Kim, Ji Eun Jun, Woong Choi, Su Hwan Ji
  • Patent number: 11001039
    Abstract: A resin film for laminated glass, laminated glass including the resin film, and a process for manufacturing the laminated glass are disclosed. The resin film for laminated glass comprises a resin layer comprising a polyvinyl acetal resin and a contact surface in direct contact with glass, wherein the contact surface has an Rz roughness of 25 to 90 ?m and a maximum static friction coefficient at 20° C. of 0.85 to 1.60, and the compressive elastic deformation index measured in the perpendicular direction from the contact surface at 35° C. is 40 to 310 ?m/N.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: May 11, 2021
    Assignee: SKC CO., LTD.
    Inventors: Kyu-Hun Kim, Jewon Yeon, Sung Jin Chung, Heung Sik Kim, Hyejin Kim, Hak Soo Lee
  • Patent number: 11003417
    Abstract: A speech recognition method and apparatus for performing speech recognition in response to an activation word determined based on a situation are provided. The speech recognition method and apparatus include an artificial intelligence (AI) system and its application, which simulates functions such as recognition and judgment of a human brain using a machine learning algorithm such as deep learning.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: May 11, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-ja Choi, Eun-kyoung Kim, Ji-sang Yu, Ji-yeon Hong, Jong-youb Ryu, Jae-won Lee
  • Patent number: 10995378
    Abstract: The present disclosure relates to a microorganism producing L-tryptophan in which the microorganism is modified such that a protein having an L-tryptophan-exporting activity comprising the amino acid sequence of SEQ ID NO: 1 is expressed, and a method for producing L-tryptophan using the microorganism.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: May 4, 2021
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Moo Young Jung, Chang Il Seo, Hyo Jin Kim, Tae Yeon Kim, Hyun Ah Kim, Sung Kwang Son, Hye Ryun Yoo, Jae Min Lee, Ki Yong Cheong
  • Publication number: 20210115134
    Abstract: The invention of the present application relates to a use of an antibody biding specifically to ECL-2 of claudin 3 and functional fragments thereof in cancer cell detection, diagnosis, imaging, and application to cancer treatment (anticancer use of the antibody itself, and application to ADC and CAR-expression cells (particularly immune cells)), an antibody that includes a characteristic CDR sequence exerting a remarkable effect in such uses, and a functional fragment thereof.
    Type: Application
    Filed: March 27, 2019
    Publication date: April 22, 2021
    Inventors: Young Kee SHIN, Sung Youl HONG, Young Deug KIM, Jun Young CHOI, Heo Bin YANG, Ha Yeon PARK, Sung Su KIM
  • Publication number: 20200288480
    Abstract: A device may be configured to receive, process, forward, and/or respond to one or more resource queries. For example, the device may determine whether multiple queries are satisfied by a multicast response. The device may receive a first query and a second query directed to a resource, The first and the second query may comprise a structure proxy rule identifier (sPRID). The device may determine the similarity between the two queries. For example, the similarity determination may be based on the sPRID of the two queries. The device may determine whether a response that satisfies the first query also satisfies the second query, which may be based on a response to the first query and information comprised within the sPRID of the two queries. If the response satisfies both queries, the device may multicast the response.
    Type: Application
    Filed: August 30, 2018
    Publication date: September 10, 2020
    Applicant: IDAC HOLDINGS, INC.
    Inventors: Sung-Yeon Kim, Dirk Trossen
  • Patent number: 10720491
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: July 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jun Ho Yoon, Won Chul Lee, Sung Yeon Kim, Jae Hong Park, Chan Hoon Park, Yong Moon Jang, Je Woo Han
  • Publication number: 20200135433
    Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.
    Type: Application
    Filed: May 9, 2019
    Publication date: April 30, 2020
    Inventors: HYUNG JUN KIM, KWANG NAM KIM, SUNG YEON KIM, JONG WOO SUN, SANG ROK OH, JUNG PYO HONG
  • Patent number: 10607855
    Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: March 31, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Ho Yoon, Jae Hong Park, Da Il Eom, Sung Yeon Kim, Jin Young Park, Yong Moon Jang
  • Publication number: 20200027705
    Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.
    Type: Application
    Filed: February 6, 2019
    Publication date: January 23, 2020
    Inventors: Kwang-Nam KIM, Sung-Yeon KIM, Hyung-Jun KIM, Jong-Woo SUN, Sang-Rok OH, Jung-Pyo HONG
  • Publication number: 20190273130
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 5, 2019
    Inventors: Jun Ho YOON, Won Chul LEE, Sung Yeon KIM, Jae Hong PARK, Chan Hoon PARK, Yong Moon JANG, Je Woo HAN
  • Patent number: 10374246
    Abstract: The present invention relates to an ion exchange membrane and a manufacturing method therefor and, more specifically, to an ion exchange membrane comprising a cross-linked sulfonated triblock copolymer and carbon nanotube, which is utilizable in a redox flow energy storage device, etc. due to high ion conductivity, mechanical strength and ion selectivity. The ion exchange membrane of the present invention has superior ion selectivity and mechanical strength and thus can greatly improve the performance of a fuel battery, etc. when applied thereto.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: August 6, 2019
    Assignee: Hyundai Electric & Energy Systems Co., Ltd.
    Inventors: Ji Hyun Kong, Jung Yun Kim, Eun Jung Choi, Moon Jeong Park, Il Young Choi, Sung Yeon Kim, Ho Il Lee
  • Patent number: 10319805
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: June 11, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jun Ho Yoon, Won Chul Lee, Sung Yeon Kim, Jae Hong Park, Chan Hoon Park, Yong Moon Jang, Je Woo Han
  • Publication number: 20190027376
    Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.
    Type: Application
    Filed: January 4, 2018
    Publication date: January 24, 2019
    Inventors: JUN HO YOON, Jae Hong Park, DA IL EOM, Sung Yeon Kim, Jin Young Park, Yong Moon Jang
  • Publication number: 20180108728
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.
    Type: Application
    Filed: June 19, 2017
    Publication date: April 19, 2018
    Inventors: Jun Ho YOON, Won Chul LEE, Sung Yeon KIM, Jae Hong PARK, Chan Hoon PARK, Yong Moon JANG, Je Woo HAN
  • Patent number: 9629085
    Abstract: A communication method of a transmission node includes generating information of a transmission unavailable time period of the transmission node in a reception available time period of a reception node, and transmitting, to the reception node, the information of the transmission unavailable time period. The reception node operates in a sleep state based on the information of the transmission unavailable time period.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: April 18, 2017
    Assignees: Samsung Electronics Co., Ltd., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Chang Soon Park, Young Soo Kim, Hyo Sun Hwang, Jang Won Lee, Sung Yeon Kim, Hyun Sik Jung
  • Publication number: 20160380297
    Abstract: The present invention relates to an ion exchange membrane and a manufacturing method therefor and, more specifically, to an ion exchange membrane comprising a cross-linked sulfonated triblock copolymer and carbon nanotube, which is utilizable in a redox flow energy storage device, etc. due to high ion conductivity, mechanical strength and ion selectivity. The ion exchange membrane of the present invention has superior ion selectivity and mechanical strength and thus can greatly improve the performance of a fuel battery, etc. when applied thereto.
    Type: Application
    Filed: November 25, 2014
    Publication date: December 29, 2016
    Applicants: Hyundai Heavy Industries Co., Ltd., Postech Academy-Industry Foundation
    Inventors: Ji Hyun Kong, Jung Yun Kim, Eun Jung Choi, Moon Jeong Park, II Young Choi, Sung Yeon Kim, Ho II Lee
  • Patent number: 9354234
    Abstract: The present invention relates to a novel coumarin derivative, to a method for preparing the same, and a multi-fluorescent substance that includes a plurality of the coumarin derivatives and is able to emit light using an LED light source. A novel coumarin derivative multi-fluorescent substance according to the present invention has an optimal emission wavelength band of 512 nm to 590 nm and thereby is effective in improving a signal intensity and stability since light emission using an LED light source is possible. In addition, higher fluorescence reactivity is exhibited compared to coumarin fluorescent substances known in the related arts since one molecule has a plurality of fluorescent substances, and the problem of the coumarin fluorescent substance possibly binding to a binding site of the antigen of the antibody is solved since fluorescence detection is possible even when a minimum number of fluorescent substance molecules bind to an antibody.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: May 31, 2016
    Assignee: GENBODY INC.
    Inventors: Hyun Park, Hak Sung Kim, Hyun Ok Song, Chom Kyu Chong, Sung Yeon Kim
  • Publication number: 20150043402
    Abstract: A communication method of a transmission node includes generating information of a transmission unavailable time period of the transmission node in a reception available time period of a reception node, and transmitting, to the reception node, the information of the transmission unavailable time period. The reception node operates in a sleep state based on the information of the transmission unavailable time period.
    Type: Application
    Filed: February 10, 2014
    Publication date: February 12, 2015
    Applicants: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang Soon PARK, Young Soo KIM, Hyo Sun HWANG, Jang Won LEE, Sung Yeon KIM, Hyun Sik JUNG
  • Publication number: 20140350227
    Abstract: The present invention relates to a novel coumarin derivative, to a method for preparing the same, and a multi-fluorescent substance that includes a plurality of the coumarin derivatives and is able to emit light using an LED light source. A novel coumarin derivative multi-fluorescent substance according to the present invention has an optimal emission wavelength band of 512 nm to 590 nm and thereby is effective in improving a signal intensity and stability since light emission using an LED light source is possible. In addition, higher fluorescence reactivity is exhibited compared to coumarin fluorescent substances known in the related arts since one molecule has a plurality of fluorescent substances, and the problem of the coumarin fluorescent substance possibly binding to a binding site of the antigen of the antibody is solved since fluorescence detection is possible even when a minimum number of fluorescent substance molecules bind to an antibody.
    Type: Application
    Filed: March 5, 2012
    Publication date: November 27, 2014
    Applicants: ACCOBIOTECH SDN BHD., GENBODY INC.
    Inventors: Hyun Park, Hak Sung Kim, Hyun Ok Song, Chom Kyu Chong, Sung Yeon Kim