Patents by Inventor Sung Yool Choi

Sung Yool Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240304637
    Abstract: An image sensor includes: a semiconductor substrate including a top surface and a bottom surface; a two-dimensional (2D) material layer on the top surface of the semiconductor substrate and including molybdenum disulfide (MoS2); and a top absorber on a top surface of the 2D material layer and including graphene, wherein the semiconductor substrate includes silicon doped with a p-type impurity, the 2D material layer has n-type conductivity, and the semiconductor substrate and the 2D material layer are configured to form a p-n diode.
    Type: Application
    Filed: March 4, 2024
    Publication date: September 12, 2024
    Applicants: SAMSUNG ELECTRONICS CO., LTD., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool CHOI, Seung Hun Han, Cheolmin Park, Hyeok Jun Jin
  • Publication number: 20240258445
    Abstract: The present invention relates to an optical sensor using ferroelectrics, including a substrate; a first type semiconductor stacked on the substrate; and a second type semiconductor in contact with the first type semiconductor to form a heterojunction structure, wherein at least one of the first type semiconductor or the second type semiconductor is ferroelectrics.
    Type: Application
    Filed: October 30, 2020
    Publication date: August 1, 2024
    Inventors: Sung-Yool Choi, Hyeok Jun Jin, Khang June Lee
  • Publication number: 20230422530
    Abstract: Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).
    Type: Application
    Filed: September 5, 2023
    Publication date: December 28, 2023
    Inventors: Sangsu PARK, Sung-Yool CHOI, Sung Gap IM, Sang Yoon YANG, Jungyeop OH
  • Patent number: 11793006
    Abstract: Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: October 17, 2023
    Assignees: SK hynix Inc., Korea Advanced Institute of Science and Technology
    Inventors: Sangsu Park, Sung-Yool Choi, Sung Gap Im, Sang Yoon Yang, Jungyeop Oh
  • Publication number: 20230309327
    Abstract: A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al2O3 layer. The insertion layer includes an Al2O3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.
    Type: Application
    Filed: March 22, 2023
    Publication date: September 28, 2023
    Inventors: Sang Su PARK, Sung Yool Choi, Jun Hwe Cha, Jung Yeop Oh
  • Patent number: 11552267
    Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: January 10, 2023
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool Choi, Byung Chul Jang, Jun Hwe Cha
  • Patent number: 11268210
    Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: March 8, 2022
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool Choi, Woonggi Hong, Gi Woong Shim
  • Publication number: 20220045289
    Abstract: Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).
    Type: Application
    Filed: August 4, 2021
    Publication date: February 10, 2022
    Inventors: Sangsu PARK, Sung-Yool CHOI, Sung Gap IM, Sang Yoon YANG, Jungyeop OH
  • Publication number: 20220010456
    Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 13, 2022
    Inventors: Sung-Yool Choi, Woonggi Hong, Gi Woong Shim
  • Publication number: 20210366707
    Abstract: The present disclosure relates to a transition metal chalcogenide for preparing metal nanostructures, metal nanostructures obtained thereby, an electronic instrument including the same, and a method for manufacturing the same. More particularly, the present disclosure relates to a transition metal chalcogenide for preparing metal nanostructures using transition metal dichalcogenide nanosheets as a reducing agent, metal nanostructures obtained thereby, an electronic instrument including the same, and a method for manufacturing the same.
    Type: Application
    Filed: November 5, 2020
    Publication date: November 25, 2021
    Inventors: Sung Yool Choi, Tae In Kim, Ick Joon Park
  • Patent number: 11024759
    Abstract: Provided is an electronic device containing: a two-dimensional semiconductor material; and another heterogeneous material adjacent to the two-dimensional semiconductor material, wherein the heterogeneous material is doped with an impurity of a type different from the two-dimensional semiconductor material or has a band gap different from the two-dimensional semiconductor material.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: June 1, 2021
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool Choi, Gwang Hyuk Shin
  • Publication number: 20210143349
    Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: May 13, 2021
    Inventors: Sung-Yool Choi, Byung Chul Jang, Jun Hwe Cha
  • Patent number: 10847577
    Abstract: Provided is a memory- and logic device-integrated soft electronic system, the memory- and logic device-integrated soft electronic system including: a substrate 100; a plurality of bar-shaped first electrodes 110 stacked on the substrate; a resistance-variable material layer 120 coated on the lower electrode; and a plurality of bar-shaped second electrodes 130 stacked on the resistance-variable material layer 120, wherein the first electrode and the second electrode cross each other.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: November 24, 2020
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Sung Yool Choi, Byung Chui Jang
  • Patent number: 10777639
    Abstract: Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.
    Type: Grant
    Filed: July 4, 2016
    Date of Patent: September 15, 2020
    Assignees: KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP, Korea Advanced Institute of Science and Technology
    Inventors: Hyun Jong Chung, Hyun Cheol Kim, Han Byeol Lee, Hak Seong Kim, Sung Yool Choi
  • Publication number: 20200203486
    Abstract: Provided is a method for manufacturing a doped graphene thin film having a mesoporous structure using a flash lamp, which comprises: a step of coating a mixture solution of a doping element source-containing material comprising a doping element and graphene oxide on a substrate; and a step of irradiating light to the coated mixture solution using a flash lamp, thereby carrying out reduction of the graphene oxide and doping of the doping element at the same time.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 25, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Jun-Hwe CHA, Il-Doo KIM
  • Publication number: 20200199710
    Abstract: Provided is a method for preparing a transition metal dichalcogenide alloy, which includes: a step of stacking two or more transition metal dichalcogenide compound thin films having different bandgaps on a substrate; a step of irradiating light to the two or more transition metal dichalcogenide compound thin films having different bandgaps; and a step of preparing a transition metal alloy by evaporating a dichalcogenide compound of the transition metal dichalcogenide compound thin film by the light.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Gi Woong SHIM
  • Publication number: 20200194602
    Abstract: Provided is an electronic device containing: a two-dimensional semiconductor material; and another heterogeneous material adjacent to the two-dimensional semiconductor material, wherein the heterogeneous material is doped with an impurity of a type different from the two-dimensional semiconductor material or has a band gap different from the two-dimensional semiconductor material.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 18, 2020
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool CHOI, Gwang Hyuk SHIN
  • Publication number: 20200194596
    Abstract: Provided is a thin-film transistor containing source, drain and gate electrodes, which contains: a channel layer containing a two-dimensional material; a gate insulator formed on the channel layer; and a gate electrode formed on the gate insulator, wherein the gate insulator contains at least two insulators having different dielectric constants.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 18, 2020
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool CHOI, Taegyu KANG, Sung Gap IM
  • Publication number: 20200194595
    Abstract: Provided is a flexible thin-film transistor using a two-dimensional semiconductor material, which includes: a flexible substrate; a channel formed on the flexible substrate and formed of a two-dimensional semiconductor material; a gate insulator and a gate electrode stacked sequentially on the channel; and source and drain electrodes formed on the channel as being spaced apart from the gate electrode.
    Type: Application
    Filed: December 16, 2019
    Publication date: June 18, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Young jun WOO
  • Publication number: 20200181768
    Abstract: Provided is a method for manufacturing a transition metal dichalcogenide (TMDC) thin film, which includes: a step of injecting two or more transition metal dichalcogenide precursors into a reactor equipped with a substrate in vapor phase; and a step of forming a transition metal dichalcogenide thin film on the substrate by decomposing the transition metal dichalcogenide precursors under an oxygen condition.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 11, 2020
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool CHOI, Gi Woong SHIM, Woonggi HONG