Abstract: Provided is a method and apparatus for receiving a reference signal. A wireless user device may determine, based on a synchronization signal (SS) block index and based on an index associated with a time interval, an initialization value associated with a reference signal for a physical broadcast channel (PBCH). The wireless user device may receive, based on the initialization value and based on a frequency domain shift value, the reference signal via at least one resource element (RE). The reference signal may be mapped, based on the frequency domain shift value, to the at least one RE. The wireless user device may receive the PBCH.

Abstract: Disclosed herein are image encoding/decoding method and apparatus. The image decoding method according to the present invention includes: obtaining prediction mode information of a neighboring block for a current block from a bitstream; by using the obtained information, deriving a prediction mode of the neighboring block; and, based on the prediction mode of the neighboring block, reconstructing the current block.

Abstract: A focusing method of a camera for obtaining an image of a surveillance area by performing a pan-tilt-zoom (PTZ) operation is included. The focusing method includes: determining whether a region of interest set in the surveillance area is included in a first image obtained by the camera; converting a mode according to a result of the determination by selecting a first mode in which focusing is performed using a first focusing algorithm or a second mode in which focusing is performed using a second focusing algorithm that is different from the first focusing algorithm; and focusing the camera with respect to the first image according to the first mode or the second mode.

Abstract: Provided is a conductive material dispersion comprising single-walled carbon nanotubes, a dispersant, a dispersion aid, and a dispersion medium, wherein the dispersant comprises polyvinyl butyral and hydrogenated nitrile butadiene rubber, and the dispersion aid comprises a compound represented by Formula 1. A-(R)n??[Formula 1] In Formula 1, A is a structure having a carbon number of 16 to 50 carbon number and comprising four or more aromatic rings and nitrogen, R is a structure comprising an anionic functional group, and n is an integer of 1 to 5.

Abstract: An apparatus for wired and wireless charging of an electronic device are provided. The electronic device includes a housing, a display on a surface of the housing, a battery mounted in the housing, a circuit electrically connected with the battery, a conductive pattern positioned in the housing, electrically connected with the circuit, and configured to wirelessly transmit power to an external device, a connector on another surface of the housing and electrically connected with the circuit, a memory, and a processor electrically connected with the display, the battery, the circuit, the connector, and/or the memory. The circuit is configured to electrically connect the battery with the conductive pattern to wirelessly transmit power to the external device and electrically connect the battery with the connector to transmit power to the external device by wire, simultaneously or selectively, with wirelessly transmitting power to the external device.

Abstract: An image processing device including a processor configured to: detect object data of an object from first image frames, among image frames input from an image sensor, at predetermined intervals according to an object detection rate which is lower than a frame rate of the image sensor; estimate, based on the object data of the first image frames, object data from second image frames other than the first image frames among the image frames; and encode the image frames at an encoding frame rate that is equal to the frame rate of the image sensor, based on the object data.

Abstract: A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.

Abstract: A semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. Air gaps are defined between the conductive patterns. The slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. A smallest width of the second interposition part is smaller than a smallest width of the first interposition part.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes a stack structure that includes interlayer insulating layers and gate lines alternately stacked with each other. A data storage layer may be formed to vertically penetrate the stack structure. The data storage layer may include a plurality of ferroelectric layers. A channel layer may be formed to be surrounded by the data storage layer.

Abstract: A beamforming maximum ratio combining (MRC) pre-processing system for adjacency removal of HDR includes a first filter module implemented in a digital radio receiver and allowing only a low side band signal having a frequency lower than a center frequency of a radio signal in a selected channel to pass therethrough and a processor module performing beamforming on the selected channel based on a difference in gain value between the signal that has passed through the filter module and an original signal that has not passed through the filter module.

Abstract: A semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. Air gaps are defined between the conductive patterns. The slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. A smallest width of the second interposition part is smaller than a smallest width of the first interposition part.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, a first dielectric layer surrounding a sidewall of the ferroelectric layer, and sacrificial patterns interposed between the first dielectric layer and the insulating layers and including a material with a higher dielectric constant than the first dielectric layer.

Abstract: An image reading apparatus includes an image sensor, a document feeder, and a processor. The document feeder includes a first driving device, a second driving device, a third driving device, a first sensor, and a second sensor. The first driving device includes a pick-up member to move documents from a tray to a document conveying path using a driving force through a first clutch. The second driving device is to move the tray with the documents to a side of the pick-up member using a driving force through a second clutch. The third driving device to move the documents along the document conveying path onto the image sensor using the driving force of the motor. The first and second sensors detect the documents on the document conveying path. The processor controls an operation of the first clutch based on the signals of the first and second sensors.

Abstract: A ferroelectric memory device includes interlayer insulating layers and gate lines alternately stacked, a data storage layer vertically passing through the interlayer insulating layers and the gate lines and having a cylindrical shape, and a channel layer formed in an area enclosed by the data storage layer. The data storage layer includes a first ferroelectric layer abutting on the channel layer, a second ferroelectric layer abutting on the interlayer insulating layers and the gate lines, and an interface layer formed between the first and the second ferroelectric layers.

Abstract: A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.

Abstract: A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, a first dielectric layer surrounding a sidewall of the ferroelectric layer, and sacrificial patterns interposed between the first dielectric layer and the insulating layers and including a material with a higher dielectric constant than the first dielectric layer.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, a first dielectric layer surrounding a sidewall of the ferroelectric layer, and sacrificial patterns interposed between the first dielectric layer and the insulating layers and including a material with a higher dielectric constant than the first dielectric layer.

Abstract: An image reading apparatus includes an image sensor, a document feeder, and a processor. The document feeder includes a first driving device, a second driving device, a third driving device, a first sensor, and a second sensor. The first driving device includes a pick-up member to move documents from a tray to a document conveying path using a driving force through a first clutch. The second driving device is to move the tray with the documents to a side of the pick-up member using a driving force through a second clutch. The third driving device to move the documents along the document conveying path onto the image sensor using the driving force of the motor The first and second sensors detect the documents on the document conveying path. The processor controls an operation of the first clutch based on the signals of the first and second sensors.