Abstract: A capsulorhexis device is inserted into an incision site of a cornea to make an incision in an anterior capsule surrounding a crystalline lens. The capsulorhexis device includes a loop having elasticity and conductivity; a moving member having one end fixed and coupled to the loop; an insertion guide configured so that, while the incision is being made in the crystalline lens capsule, a front end thereof is inserted into the incision site of the cornea; and a housing having one end coupled to a rear end of the insertion guide, wherein the loop is housed in the housing and, to make the incision in the crystalline lens capsule, slides in the housing together with the moving member to pass through the insertion guide and be deployed into an anterior chamber of the eye.

Abstract: A method for controlling driving of a hybrid electric vehicle includes collecting driving data while the hybrid electric vehicle is driven, determining whether the hybrid electric vehicle enters a first mode corresponding to emergency driving of the hybrid electric vehicle or a second mode corresponding to control in preparation for the emergency driving, and controlling the hybrid electric vehicle in accordance with a mode that the hybrid electric vehicle enters among the first mode and the second mode.

Abstract: An inverted nanocone structure of the present disclosure includes a first surface, a second surface spaced apart from the first surface by a predetermined distance and having a greater area than the first surface, and a body having an inverted cone shape between the first surface and the second surface, wherein at least one activated point defect center is provided in the body.

Abstract: This specification discloses a quantum public-key cryptosystem. The quantum public-key cryptosystem may use two rotation operators R{circumflex over (n)}(?) and R{circumflex over (m)}(?) satisfying a cyclic evolution. The two rotation operators R{circumflex over (n)}(?) and R{circumflex over (m)}(?) do not have a commutation relation or an anti-commutation relation with each other. The commutation relation or the anti-commutation relation is established when either of the following conditions is satisfied: ?=2i?, ?=2j?, or {circumflex over (n)}·{circumflex over (m)}=1 (i, j=integer), and ?=(2k+1)?, ?=(2l+1)?, or {circumflex over (n)}·{circumflex over (m)}=0 (k, l=integer).

Abstract: A semiconductor package may comprise: a first passivation layer forming an electrical connection with one or more first bumps; a substrate layer including a second passivation layer and a silicon layer; a back-end-of-line (BEOL) layer formed on the substrate layer; and a third passivation layer formed on the BEOL layer forming an electrical connection with one or more second bumps, wherein the substrate layer includes a first signal TSV (Through Silicon Via) which transmits a first signal between the BEOL layer and a first lower pad, a second signal TSV which transmits a second signal between the BEOL layer and a second lower pad, and a ground TSV which is disposed between the first signal TSV and the second signal TSV and formed so that one end thereof is connected to the BEOL layer and the other end thereof floats.

Abstract: An inverted nanocone structure of the present disclosure includes a first surface, a second surface spaced apart from the first surface by a predetermined distance and having a greater area than the first surface, and a body having an inverted cone shape between the first surface and the second surface, wherein at least one activated point defect center is provided in the body.

Abstract: The present invention provides a random number generation system comprising: an image sensor module for outputting dark noise generated from each unit pixel region respectively that is shielded from external light as digital data; and a control unit for classifying the respective pieces of digital data output from the image sensor module, for allocating random numbers to the same using a database in which a plurality of reference values are stored for each unit pixel, and for collating the same so as to generate a first random number.

Abstract: A semiconductor package may comprise: a first passivation layer forming an electrical connection with one or more first bumps; a substrate layer including a second passivation layer and a silicon layer; a back-end-of-line (BEOL) layer formed on the substrate layer; and a third passivation layer formed on the BEOL layer forming an electrical connection with one or more second bumps, wherein the substrate layer includes a first signal TSV (Through Silicon Via) which transmits a first signal between the BEOL layer and a first lower pad, a second signal TSV which transmits a second signal between the BEOL layer and a second lower pad, and a ground TSV which is disposed between the first signal TSV and the second signal TSV and formed so that one end thereof is connected to the BEOL layer and the other end thereof floats.

Abstract: This specification discloses a quantum public-key cryptosystem. The quantum public-key cryptosystem may use two rotation operators R{circumflex over (n)}(?) and R{circumflex over (m)}(?) satisfying a cyclic evolution. The two rotation operators R{circumflex over (n)}(?) and R{circumflex over (m)}(?) do not have a commutation relation or an anti-commutation relation with each other. The commutation relation or the anti-commutation relation is established when either of the following conditions is satisfied: ?=2i?, ?=2j?, or {circumflex over (n)}·{circumflex over (m)}=1 (i, j=integer), and ?=(2k+1)?, ?=(2l+1)?, or {circumflex over (n)}·{circumflex over (m)}=0 (k, l=integer).

Abstract: A light emitting device of an embodiment comprises: a lower electrode; a light emitting structure disposed on the lower electrode and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an upper electrode pad disposed on the light emitting structure; at least one branch electrode connected to the upper electrode pad; and an upper ohmic layer disposed below the at least one branch electrode, wherein the upper electrode pad may include at least one connecting electrode connected to at least one branch electrode, and at least one connecting electrode may be integrally formed with the upper electrode pad and may project at certain intervals from a side surface of the upper electrode pad.

Abstract: An embodiment discloses a light emitting device and a display comprising the same.

Abstract: A semiconductor package includes an integrated circuit mounted on a substrate, a first power line disposed on or above the substrate and configured to transmit an operating voltage to the integrated circuit, and a second power line disposed on or above the substrate and configured to transmit a ground voltage to the integrated circuit, in which each of the first power line and the second power line has a first width, the first power line is spaced apart from the second power line by a first distance, thicknesses of each of the first power line and the second power line are less than or equal to 20 ?m, and a ratio of the first width to the first distance is greater than 2.5.

Abstract: The present invention provides a random number generation system comprising: an image sensor module for outputting dark noise generated from each unit pixel region respectively that is shielded from external light as digital data; and a control unit for classifying the respective pieces of digital data output from the image sensor module, for allocating random numbers to the same using a database in which a plurality of reference values are stored for each unit pixel, and for collating the same so as to generate a first random number.

Abstract: An embodiment discloses a light emitting device and a display comprising the same.

Abstract: A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/InxGa1-xP layer (0?x?1) 125b.

Abstract: Disclosed is a communication apparatus including a synchronization signal detector configured to detect a synchronization signal received from other communication apparatus coupled to the communication apparatus, wherein the other communication apparatus sends a quantum signal generated by a first light source to the communication apparatus, and a second light source configured to generate a decoy signal to be added to a quantum signal that is to be sent to the other communication apparatus according to a result of the detection of the synchronization signal.

Abstract: Disclosed is a method for stabilizing a quantum cryptography system, which includes: determining whether the quantum cryptography system operates in a stabilized state, on the basis of a bit error rate or a key rate of the quantum cryptography system; and readjusting an arrival time of a gate pulse or a laser operation time so that an arrival time of a single photon for a photon detector is aligned with the arrival time of the gate pulse, when the quantum cryptography system does not operate in a stabilized state. Here, the quantum cryptography system may be a two-way quantum cryptography system.

Abstract: A light emitting device of an embodiment comprises: a lower electrode; a light emitting structure disposed on the lower electrode and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an upper electrode pad disposed on the light emitting structure; at least one branch electrode connected to the upper electrode pad; and an upper ohmic layer disposed below the at least one branch electrode, wherein the upper electrode pad may include at least one connecting electrode connected to at least one branch electrode, and at least one connecting electrode may be integrally formed with the upper electrode pad and may project at certain intervals from a side surface of the upper electrode pad.

Abstract: A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/InxGa1-xP layer (0?x?1) 125b.

Abstract: A semiconductor package includes an integrated circuit mounted on a substrate, a first power line disposed on or above the substrate and configured to transmit an operating voltage to the integrated circuit, and a second power line disposed on or above the substrate and configured to transmit a ground voltage to the integrated circuit, in which each of the first power line and the second power line has a first width, the first power line is spaced apart from the second power line by a first distance, thicknesses of each of the first power line and the second power line are less than or equal to 20 ?m, and a ratio of the first width to the first distance is greater than 2.5.