Abstract: Proposed is a substrate processing apparatus including a showerhead assembly. A showerhead assembly according to an embodiment includes an upper plate, a gas distribution plate disposed under the upper plate and having a plurality of through-holes, a shower plate disposed under the gas distribution plate and having a plurality of gas spray holes connected to the through-holes, and a fastening unit fastening the gas distribution plate and the shower plate to each other. The fastening unit includes a cam received in the shower plate, and a pinion received in the gas distribution plate. The pinion is coupled to the cam by a rack inserted through a passage formed in the gas distribution plate.

Abstract: Proposed are an apparatus for recording a holographic interference pattern and a method of recording a holographic interference pattern using the apparatus, the apparatus and the method being capable of simplifying a process of aligning a light source and a photosensitive material in order to record a holographic interference pattern on a three-dimensional coordinate system and then realigning the light source and the photosensitive material in order to record a different holographic interference pattern.

Abstract: The present disclosure relates to a battery pack comprising: one or more battery cells comprising a main body portion for accommodating an electrode assembly therein and a mounting portion provided outside of the main body portion; a pack tray comprising a lower panel formed in parallel with a stacking direction in which the one or more battery cells are stacked and both side panels extending upward from opposite edge positions of the lower panel, and accommodating the one or more battery cells; and a support bar of which both ends are connected to the both side panels and which is formed in parallel with the stacking direction, wherein the mounting portion is mounted on the support bar.

Abstract: A lens assembly includes a lens barrel having an outer diameter increasing from a subject side to an image side, and a ring member disposed on an outer circumferential surface of the lens barrel.

Abstract: An embodiment of the present disclosure provides a holographic optical element and a manufacturing method of a holographic optical element including holographic gratings, the manufacturing method including: a step (a) of forming a photosensitive substrate by coating one surface of a substrate with a photosensitive resin; and a step (b) of recording the holographic gratings by irradiating each of one surface and the other surface of the photosensitive substrate with laser light, wherein in the step (a), the photosensitive resin is applied so that a height of a photosensitive resin coating layer varies along a predetermined direction.

Abstract: A device may be configured to receive, process, forward, and/or respond to one or more resource queries. For example, the device may determine whether multiple queries are satisfied by a multicast response. The device may receive a first query and a second query directed to a resource, The first and the second query may comprise a structure proxy rule identifier (sPRID). The device may determine the similarity between the two queries. For example, the similarity determination may be based on the sPRID of the two queries. The device may determine whether a response that satisfies the first query also satisfies the second query, which may be based on a response to the first query and information comprised within the sPRID of the two queries. If the response satisfies both queries, the device may multicast the response.

Abstract: A device may be configured to receive, process, forward, and/or respond to one or more resource queries. For example, the device may determine whether multiple queries are satisfied by a multicast response. The device may receive a first query and a second query directed to a resource, The first and the second query may comprise a structure proxy rule identifier (sPRID). The device may determine the similarity between the two queries. For example, the similarity determination may be based on the sPRID of the two queries. The device may determine whether a response that satisfies the first query also satisfies the second query, which may be based on a response to the first query and information comprised within the sPRID of the two queries. If the response satisfies both queries, the device may multicast the response.

Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Abstract: An apparatus for vapor jet deposition includes a source vapor generation part generating a source vapor, and a nozzle part including a diffusion block diffusing the source vapor, a nozzle plate including a plurality of nozzles, and a coupling member disposed between the diffusion block and the nozzle plate to combine the diffusion block with the nozzle plate. A thermal expansion coefficient of the coupling member has a value between a thermal expansion coefficient of the diffusion block and a thermal expansion coefficient of the nozzle plate. The coupling member includes a glass material. A softening temperature of the coupling member is equal to or less than about 400° C.

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

Abstract: A device may be configured to receive, process, forward, and/or respond to one or more resource queries. For example, the device may determine whether multiple queries are satisfied by a multicast response. The device may receive a first query and a second query directed to a resource, The first and the second query may comprise a structure proxy rule identifier (sPRID). The device may determine the similarity between the two queries. For example, the similarity determination may be based on the sPRID of the two queries. The device may determine whether a response that satisfies the first query also satisfies the second query, which may be based on a response to the first query and information comprised within the sPRID of the two queries. If the response satisfies both queries, the device may multicast the response.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: The present invention relates to an ion exchange membrane and a manufacturing method therefor and, more specifically, to an ion exchange membrane comprising a cross-linked sulfonated triblock copolymer and carbon nanotube, which is utilizable in a redox flow energy storage device, etc. due to high ion conductivity, mechanical strength and ion selectivity. The ion exchange membrane of the present invention has superior ion selectivity and mechanical strength and thus can greatly improve the performance of a fuel battery, etc. when applied thereto.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.