Patents by Inventor Sunil Kapoor
Sunil Kapoor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180175819Abstract: Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.Type: ApplicationFiled: December 16, 2016Publication date: June 21, 2018Inventors: Yaswanth Rangineni, Sunil Kapoor, Edward Augustyniak, Yukinori Sakiyama
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Publication number: 20180163302Abstract: Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: ApplicationFiled: November 10, 2017Publication date: June 14, 2018Inventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
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Patent number: 9954508Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.Type: GrantFiled: October 26, 2015Date of Patent: April 24, 2018Assignee: Lam Research CorporationInventors: Karl Leeser, Sunil Kapoor, Bradford J. Lyndaker
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Publication number: 20180025930Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.Type: ApplicationFiled: June 30, 2017Publication date: January 25, 2018Inventors: Edward Augustyniak, David French, Sunil Kapoor, Yukinori Sakiyama, George Thomas
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Patent number: 9875883Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: GrantFiled: July 26, 2017Date of Patent: January 23, 2018Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
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Publication number: 20170365907Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.Type: ApplicationFiled: September 1, 2016Publication date: December 21, 2017Inventors: Sunil Kapoor, George Thomas, Yaswanth Rangineni, Edward Augustyniak
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Patent number: 9840776Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: GrantFiled: December 15, 2015Date of Patent: December 12, 2017Assignee: Lam Research CorporationInventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
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Publication number: 20170338085Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: ApplicationFiled: July 26, 2017Publication date: November 23, 2017Inventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
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Patent number: 9754769Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: GrantFiled: September 15, 2015Date of Patent: September 5, 2017Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
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Publication number: 20170169995Abstract: An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.Type: ApplicationFiled: February 19, 2016Publication date: June 15, 2017Inventors: Hyungjoon Kim, Sunil Kapoor, Karl Leeser, Vince Burkhart
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Publication number: 20170117869Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.Type: ApplicationFiled: October 26, 2015Publication date: April 27, 2017Inventors: Karl Leeser, Sunil Kapoor, Bradford J. Lyndaker
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Publication number: 20170111025Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.Type: ApplicationFiled: October 15, 2015Publication date: April 20, 2017Inventors: Sunil Kapoor, Aaron Logan, Hyungjoon Kim, Yaswanth Rangineni, Karl Leeser
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Publication number: 20170076921Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.Type: ApplicationFiled: September 15, 2015Publication date: March 16, 2017Inventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
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Publication number: 20160293385Abstract: Methods and systems for detecting processing conditions of a plasma processing system are provided. One method includes providing radio frequency (RF) power from an RF power supply to a showerhead of the plasma processing system and running a process operation on a substrate disposed in the plasma processing system. The method further includes sensing a voltage the showerhead using a voltage probe that is connected in-line between the RF power supply and the showerhead. The sensing of the voltage produces voltage values during the running of the process operation. The method includes comparing the voltage values against a voltage check band that is predefined for the process operation being run. The comparing is configured to detect when the voltage values are outside of the voltage check band. The method also includes generating an alert when the comparing detects that the voltage values are outside of the voltage check band.Type: ApplicationFiled: March 22, 2016Publication date: October 6, 2016Inventors: Sunil Kapoor, Yaswanth Rangineni, Aaron Bingham, Tuan Nguyen
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Publication number: 20160168701Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: ApplicationFiled: December 15, 2015Publication date: June 16, 2016Inventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
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Patent number: 9263350Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: GrantFiled: August 12, 2014Date of Patent: February 16, 2016Assignee: Lam Research CorporationInventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
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Publication number: 20150348854Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.Type: ApplicationFiled: August 12, 2014Publication date: December 3, 2015Inventors: Sunil Kapoor, Karl F. Leeser, Adrien LaVoie, Yaswanth Rangineni
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Patent number: 8282983Abstract: Apparatus and methods to minimize wafer-to-wafer process variation in RF-based semiconductor processing reactors with shared RF source for multiple processing areas. RF sensors associated with each processing area sends signal to the RF balance controller. The controller modifies station impedance using power adjustment mechanisms. As a result, station to station distribution of a selected RF parameter (e.g., load power) may match the station set points. Closed loop control maintains balance despite changing conditions.Type: GrantFiled: September 30, 2008Date of Patent: October 9, 2012Assignee: Novellus Systems, Inc.Inventors: Sunil Kapoor, Edward Augustyniak
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Publication number: 20120164834Abstract: Methods and hardware for generating variable-density plasmas are described. For example, in one embodiment, a process station comprises a showerhead including a showerhead electrode and a substrate holder including a mesa configured to support a substrate, wherein the substrate holder is disposed beneath the showerhead. The substrate holder includes an inner electrode disposed in an inner region of the substrate holder and an outer electrode being disposed in an outer region of the substrate holder. The process station further comprises a plasma generator configured to generate a plasma in a plasma region disposed between the showerhead and the substrate holder, and a controller configured to control the plasma generator, the inner electrode, the outer electrode, and the showerhead electrode to effect a greater plasma density in an outer portion of the plasma region than in an inner portion of the plasma region.Type: ApplicationFiled: December 22, 2010Publication date: June 28, 2012Inventors: Kevin Jennings, Mohamed Sabri, Edward Augustyniak, Sunil Kapoor, Douglas Keil
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Publication number: 20080279120Abstract: Systems and methods for an upgradeable and/or reconfigurable receiver are provided. In general, the present invention is directed to providing systems and methods for designing an electronic communication system having easy and cost effective upgradeable receiver systems and components including, for example, an amplifier and/or a filter. For example, a receiver may include a receiver front end that is configured so that at least one of the original conventional system components may be used along with one or more new system components to provide greater receiver sensitivity and/or selectivity. In various embodiments, portions of an upgradeable receiver system may be made as modular components that allow easy replacement for the upgradeable components which may include a signal amplifier and/or a signal filter. In various embodiments the receiver may be upgraded by replacing a conventional low noise amplifier (LNA) with a high temperature superconductor (HTS) filter and/or a cryo-cooled LNA.Type: ApplicationFiled: June 10, 2008Publication date: November 13, 2008Inventors: Sunil Kapoor, Ashok Burton Tripathi, Gregory Lynton Hey-Shipton, Gena Marie Yates, Edward Robert Soares