Patents by Inventor Sun-Ja Kim
Sun-Ja Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240107842Abstract: A display device includes a substrate including a display area and a peripheral area disposed around the display area. The peripheral area includes a bending region and a contact region adjacent to the bending region. A first connection line includes a first portion disposed in the contact region, and a second portion disposed in both the bending region and the contact region, and including a first layer and a second layer. At least part of the second layer of the second portion overlaps the first layer of the second portion. In the contact region, the first layer of the second portion is electrically connected to the first portion, and the second layer of the second portion is electrically connected to the first layer of the second portion.Type: ApplicationFiled: December 8, 2023Publication date: March 28, 2024Inventors: Hyun Ae PARK, Sun-Ja KWON, Byung Sun KIM, Yang Wan KIM, Su Jin LEE, Jae Yong LEE
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Patent number: 11776807Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: GrantFiled: October 22, 2021Date of Patent: October 3, 2023Assignee: ASM IP Holding, B.V.Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Patent number: 11728164Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: GrantFiled: October 11, 2021Date of Patent: August 15, 2023Assignee: ASM IP HOLDING B.V.Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Patent number: 11501965Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.Type: GrantFiled: May 4, 2018Date of Patent: November 15, 2022Assignee: ASM IP HOLDING B.V.Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia, Eva Tois, Suvi Haukka, Toshiya Suzuki
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Publication number: 20220076949Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: ApplicationFiled: October 11, 2021Publication date: March 10, 2022Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Publication number: 20220044931Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: ApplicationFiled: October 22, 2021Publication date: February 10, 2022Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Patent number: 11170993Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: GrantFiled: May 3, 2018Date of Patent: November 9, 2021Assignee: ASM IP HOLDING B.V.Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Patent number: 11158500Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: GrantFiled: May 3, 2018Date of Patent: October 26, 2021Assignee: ASM IP HOLDING B.V.Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Patent number: 10991573Abstract: Plasma enhanced atomic layer deposition (PEALD) processes for simultaneously depositing SiOC on two or more different surfaces of a substrate are provided. For example, SiOC may be deposited simultaneously on a first dielectric surface and a second metal or metallic surface. The PEALD processes can comprise two or more deposition cycles for forming SiOC on the two surfaces. The deposition cycles may comprise alternately and sequentially contacting the substrate with a first precursor comprising silicon and a second plasma reactant, such as an Ar/H2 plasma. In some embodiments, a PEALD process further comprises contacting the substrate with a plasma reactant prior to beginning the deposition cycle. In some embodiments, the deposition cycle is repeated more than 500 times and a uniform SiOC film may be formed on the two different surfaces.Type: GrantFiled: December 3, 2018Date of Patent: April 27, 2021Assignee: ASM IP HOLDING B.V.Inventors: Lingyun Jia, Viljami Pore, Eva Tois, Sun Ja Kim
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Publication number: 20200395211Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: ApplicationFiled: May 3, 2018Publication date: December 17, 2020Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Patent number: 10644025Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.Type: GrantFiled: September 28, 2018Date of Patent: May 5, 2020Assignee: ASM IP Holding B.V.Inventors: Seung Ju Chun, Yong Min Yoo, Jong Wan Choi, Young Jae Kim, Sun Ja Kim, Wan Gyu Lim, Yoon Ki Min, Hae Jin Lee, Tae Hee Yoo
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Patent number: 10622375Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.Type: GrantFiled: November 13, 2018Date of Patent: April 14, 2020Assignee: ASM IP Holding B.V.Inventors: Seung Ju Chun, Yong Min Yoo, Jong Wan Choi, Young Jae Kim, Sun Ja Kim, Wan Gyu Lim, Yoon Ki Min, Hae Jin Lee, Tae Hee Yoo
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Publication number: 20200066512Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: ApplicationFiled: May 3, 2018Publication date: February 27, 2020Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Patent number: 10381226Abstract: A method of processing a substrate to enable selective doping without a photolithography process is provided. The method includes forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method, removing the diffusion barrier except for part of the diffusion barrier using wet etching, forming a diffusion source layer on the patterned structure and the part of the diffusion barrier, and applying energy to the diffusion source layer.Type: GrantFiled: July 27, 2017Date of Patent: August 13, 2019Assignee: ASM IP Holding B.V.Inventors: Yong Min Yoo, Jong Wan Choi, Young Jae Kim, Sun Ja Kim, Wan Gyu Lim
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Publication number: 20190172701Abstract: Plasma enhanced atomic layer deposition (PEALD) processes for simultaneously depositing SiOC on two or more different surfaces of a substrate are provided. For example, SiOC may be deposited simultaneously on a first dielectric surface and a second metal or metallic surface. The PEALD processes can comprise two or more deposition cycles for forming SiOC on the two surfaces. The deposition cycles may comprise alternately and sequentially contacting the substrate with a first precursor comprising silicon and a second plasma reactant, such as an Ar/H2 plasma. In some embodiments, a PEALD process further comprises contacting the substrate with a plasma reactant prior to beginning the deposition cycle. In some embodiments, the deposition cycle is repeated more than 500 times and a uniform SiOC film may be formed on the two different surfaces.Type: ApplicationFiled: December 3, 2018Publication date: June 6, 2019Inventors: Lingyun Jia, Viljami Pore, Eva Tois, Sun Ja Kim
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Patent number: 10249577Abstract: A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.Type: GrantFiled: April 27, 2017Date of Patent: April 2, 2019Assignee: ASM IP Holding B.V.Inventors: Choong Man Lee, Yong Min Yoo, Young Jae Kim, Seung Ju Chun, Sun Ja Kim
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Publication number: 20190081072Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.Type: ApplicationFiled: November 13, 2018Publication date: March 14, 2019Inventors: Seung Ju Chun, Yong Min Yoo, Jong Wan Choi, Young Jae Kim, Sun Ja Kim, Wan Gyu Lim, Yoon Ki Min, Hae Jin Lee, Tae Hee Yoo
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Publication number: 20190035810Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.Type: ApplicationFiled: September 28, 2018Publication date: January 31, 2019Inventors: Seung Ju Chun, Yong Min Yoo, Jong Wan Choi, Young Jae Kim, Sun Ja Kim, Wan Gyu Lim, Yoon Ki Min, Hae Jin Lee, Tae Hee Yoo
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Publication number: 20180350587Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.Type: ApplicationFiled: May 4, 2018Publication date: December 6, 2018Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia, Eva Tois, Suvi Haukka, Toshiya Suzuki
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Patent number: 10134757Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.Type: GrantFiled: June 30, 2017Date of Patent: November 20, 2018Assignee: ASM IP Holding B.V.Inventors: Seung Ju Chun, Yong Min Yoo, Jong Wan Choi, Young Jae Kim, Sun Ja Kim, Wan Gyu Lim, Yoon Ki Min, Hae Jin Lee, Tae Hee Yoo