Abstract: Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector for conditioning a polishing pad includes a member having a first surface and a plurality of contact elements projecting from the first surface. The member also includes a plurality of apertures configured to flow conditioning solution to the polishing pad. The apertures can extend from the first surface to a second surface opposite the first surface. The member can further include a manifold that is in fluid communication with the apertures. In another embodiment, a conditioner for conditioning the polishing pad includes an arm having at least one spray nozzle configured to spray conditioning solution onto the polishing pad and an end effector coupled to the arm. The end effector includes a first surface and a plurality of contact elements projecting from the first surface.

Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.

Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.