Patents by Inventor Susanne A. Paul
Susanne A. Paul has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220103140Abstract: An envelope stacking power amplifier system reduces current for a given output power level without sacrificing the ability to support large voltage swings at saturation and therefore increases efficiency at the maximum linear operating power and all power levels below that. The system includes a stack/unstack controller including circuitry configured to switch the RF power amplifier system between a stacked mode in which first and second RF amplifiers are coupled in a stacked configuration and an unstacked mode in which the first and second RF amplifiers are coupled in an unstacked configuration in response to one or more mode-control signals, the stacked configuration providing reduced current compared to the unstacked configuration.Type: ApplicationFiled: September 3, 2021Publication date: March 31, 2022Inventors: Susanne Paul, Akhil Garlapati, Yan Li
-
Patent number: 11114990Abstract: An envelope stacking power amplifier system reduces current for a given output power level without sacrificing the ability to support large voltage swings at saturation and therefore increases efficiency at the maximum linear operating power and all power levels below that. The system includes a stack/unstack controller including circuitry configured to switch the RF power amplifier system between a stacked mode in which first and second RF amplifiers are coupled in a stacked configuration and an unstacked mode in which the first and second RF amplifiers are coupled in an unstacked configuration in response to one or more mode-control signals, the stacked configuration providing reduced current compared to the unstacked configuration.Type: GrantFiled: August 12, 2020Date of Patent: September 7, 2021Assignee: Anokiwave, Inc.Inventors: Susanne Paul, Akhil Garlapati, Yan Li
-
Publication number: 20210050828Abstract: An envelope stacking power amplifier system reduces current for a given output power level without sacrificing the ability to support large voltage swings at saturation and therefore increases efficiency at the maximum linear operating power and all power levels below that. The system includes a stack/unstack controller including circuitry configured to switch the RF power amplifier system between a stacked mode in which first and second RF amplifiers are coupled in a stacked configuration and an unstacked mode in which the first and second RF amplifiers are coupled in an unstacked configuration in response to one or more mode-control signals, the stacked configuration providing reduced current compared to the unstacked configuration.Type: ApplicationFiled: August 12, 2020Publication date: February 18, 2021Inventors: Susanne Paul, Akhil Garlapati, Yan Li
-
Patent number: 10855383Abstract: A system and a method for calibrating an antenna using trim bits and non-volatile memory is disclosed. In one aspect, an apparatus includes a power amplifier configured to at least amplify the output signal of the first antenna. The power amplifier includes multiple stages. The apparatus further includes a trim control circuit configured to adjust a bias of one of the stages of the power amplifier, using trim bits from non-volatile memory. The trim control circuit is further configured to scale the bias of one of the plurality of stages of the power amplifier by an integer between 0 and 2n?1 corresponding to a binary number formed by the first plurality of trim bits, wherein n corresponds to the number of trim bits.Type: GrantFiled: March 14, 2019Date of Patent: December 1, 2020Assignee: ANOKIWAVE, INC.Inventors: Robert McMorrow, Vipul Jain, Mikhail Shirokov, Kevin B. Greene, Susanne A. Paul, Shamsun Nahar
-
Publication number: 20200295853Abstract: A system and a method for calibrating an antenna using trim bits and non-volatile memory is disclosed. In one aspect, an apparatus includes a power amplifier configured to at least amplify the output signal of the first antenna. The power amplifier includes multiple stages. The apparatus further includes a trim control circuit configured to adjust a bias of one of the stages of the power amplifier, using trim bits from non-volatile memory. The trim control circuit is further configured to scale the bias of one of the plurality of stages of the power amplifier by an integer between 0 and 2n-1 corresponding to a binary number formed by the first plurality of trim bits, wherein n corresponds to the number of trim bits.Type: ApplicationFiled: March 14, 2019Publication date: September 17, 2020Applicant: ANOKIWAVE, INC.Inventors: Robert McMorrow, Vipul Jain, Mikhail Shirokov, Kevin B. Greene, Susanne A. Paul, Shamsun Nahar
-
Patent number: 10008758Abstract: A directional coupler utilizes an inductive element of a power amplifier and a coupled conductive element. The inductive element of the power amplifier is a functioning element within the power amplifier and at least part of the inductive element of the power amplifier is disposed in a multi-layer substrate. At least part of the coupled conductive element is disposed in the multi-layer substrate. The coupled conductive element is configured to be inductively coupled to the inductive element of the power amplifier such that the coupled conductive element carries a first RF signal that is representative of a second RF signal within the inductive element of the power amplifier.Type: GrantFiled: June 27, 2016Date of Patent: June 26, 2018Assignee: QUALCOMM IncorporatedInventors: Kiyoshi Kase, Marius Goldenberg, Susanne A. Paul
-
Publication number: 20160359216Abstract: A directional coupler utilizes an inductive element of a power amplifier and a coupled conductive element. The inductive element of the power amplifier is a functioning element within the power amplifier and at least part of the inductive element of the power amplifier is disposed in a multi-layer substrate. At least part of the coupled conductive element is disposed in the multi-layer substrate. The coupled conductive element is configured to be inductively coupled to the inductive element of the power amplifier such that the coupled conductive element carries a first RF signal that is representative of a second RF signal within the inductive element of the power amplifier.Type: ApplicationFiled: June 27, 2016Publication date: December 8, 2016Inventors: Kiyoshi KASE, Marius GOLDENBERG, Susanne A. PAUL
-
Patent number: 9413406Abstract: An RF amplifier, including: an input RF chain configured to receive and process an input RF signal including a plurality of frequency bands within a first band group and output a first signal; and a plurality of output RF chains coupled to the input RF chain, each output RF chain of the plurality of output RF chains configured to process the first signal within at least one band of the plurality of frequency bands of the first band group, wherein each output RF chain includes a bias circuit configured to receive an enable signal to enable the processing of the first signal within the at least one band and output an output RF signal within the at least one band.Type: GrantFiled: March 12, 2015Date of Patent: August 9, 2016Assignee: QUALCOMM IncorporatedInventors: Susanne Paul, Marius Goldenberg
-
Patent number: 9379678Abstract: A directional coupler utilizes an inductive element of a power amplifier and a coupled conductive element. The inductive element of the power amplifier is a functioning element within the power amplifier and at least part of the inductive element of the power amplifier is disposed in a multi-layer substrate. At least part of the coupled conductive element is disposed in the multi-layer substrate. The coupled conductive element is configured to be inductively coupled to the inductive element of the power amplifier such that the coupled conductive element carries a first RF signal that is representative of a second RF signal within the inductive element of the power amplifier.Type: GrantFiled: March 15, 2013Date of Patent: June 28, 2016Assignee: Qualcomm IncorporatedInventors: Kiyoshi Kase, Marius Goldenberg, Susanne A. Paul
-
Patent number: 9190962Abstract: A radio frequency (RF) power amplifier (PA) is reconfigured to operate in a low power mode from a high power mode. The RF PA has a first RF amplifier is connected to the first and second inputs of a first transformation network. The RF PA has a second a second RF amplifier connected to a second transformation network. During high power mode, both RF amplifiers drive a load coupled to the transformation networks. In low power mode the first RF amplifier is disabled and the first and second inputs of the first transformation are coupled together so as to change the load impedance seen by the second RF amplifier. The second RF amplifier continues to supply power to the load during operation in the low power mode.Type: GrantFiled: July 7, 2014Date of Patent: November 17, 2015Assignee: QUALCOMM INCORPORATEDInventors: Susanne A. Paul, Marius Goldenberg
-
Publication number: 20150263769Abstract: An RF amplifier, including: an input RF chain configured to receive and process an input RF signal including a plurality of frequency bands within a first band group and output a first signal; and a plurality of output RF chains coupled to the input RF chain, each output RF chain of the plurality of output RF chains configured to process the first signal within at least one band of the plurality of frequency bands of the first band group, wherein each output RF chain includes a bias circuit configured to receive an enable signal to enable the processing of the first signal within the at least one band and output an output RF signal within the at least one band.Type: ApplicationFiled: March 12, 2015Publication date: September 17, 2015Inventors: Susanne Paul, Marius Goldenberg
-
Patent number: 9136809Abstract: An RF power amplifier operates over the range of supply voltages provided by a DC/DC converter whether the range of voltages is intentional or unintentional. A system for digitally adjusting the bias levels relative to the supply voltage includes at least one RF power amplifier stage, a digital control block, and a bias circuit. The RF power amplifier stage has at least one RF input signal, at least one RF output signal, and at least one bias input that controls its bias conditions. The RF Power Amplifier Stage includes one or more active gain elements used to amplify the RF input signals. The RF power amplifier operates in a number of bias states controlled by the digital control block. The digital control block uses information related to the supply voltage and may use other information stored in memory to select the desired bias.Type: GrantFiled: November 27, 2013Date of Patent: September 15, 2015Assignee: QUALCOMM INCORPORATEDInventors: Robert J. McMorrow, Susanne A. Paul, Aria Eshraghi, Marius Goldenberg
-
Publication number: 20150077186Abstract: A radio frequency (RF) power amplifier (PA) is reconfigured to operate in a low power mode from a high power mode. The RF PA has a first RF amplifier is connected to the first and second inputs of a first transformation network. The RF PA has a second a second RF amplifier connected to a second transformation network. During high power mode, both RF amplifiers drive a load coupled to the transformation networks. In low power mode the first RF amplifier is disabled and the first and second inputs of the first transformation are coupled together so as to change the load impedance seen by the second RF amplifier. The second RF amplifier continues to supply power to the load during operation in the low power mode.Type: ApplicationFiled: July 7, 2014Publication date: March 19, 2015Inventors: Susanne A. Paul, Marius Goldenberg
-
Patent number: 8922282Abstract: A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.Type: GrantFiled: December 3, 2012Date of Patent: December 30, 2014Assignee: Black Sand Technologies, Inc.Inventors: Susanne Paul, Marius Goldenberg
-
Patent number: 8774741Abstract: A radio frequency (RF) power amplifier (PA) is reconfigured to operate in a low power mode from a high power mode. The RF PA has a first RF amplifier is connected to the first and second inputs of a first transformation network. The RF PA has a second a second RF amplifier connected to a second transformation network. During high power mode, both RF amplifiers drive a load coupled to the transformation networks. In low power mode the first RF amplifier is disabled and the first and second inputs of the first transformation are coupled together so as to change the load impedance seen by the second RF amplifier. The second RF amplifier continues to supply power to the load during operation in the low power mode.Type: GrantFiled: March 13, 2013Date of Patent: July 8, 2014Assignee: Black Sand Technologies, Inc.Inventors: Susanne A. Paul, Marius Goldenberg
-
Publication number: 20140152390Abstract: An RF power amplifier operates over the range of supply voltages provided by a DC/DC converter whether the range of voltages is intentional or unintentional. A system for digitally adjusting the bias levels relative to the supply voltage includes at least one RF power amplifier stage, a digital control block, and a bias circuit. The RF power amplifier stage has at least one RF input signal, at least one RF output signal, and at least one bias input that controls its bias conditions. The RF Power Amplifier Stage includes one or more active gain elements used to amplify the RF input signals. The RF power amplifier operates in a number of bias states controlled by the digital control block. The digital control block uses information related to the supply voltage and may use other information stored in memory to select the desired bias.Type: ApplicationFiled: November 27, 2013Publication date: June 5, 2014Applicant: Black Sand Technologies, Inc.Inventors: Robert J. McMorrow, Susanne A. Paul, Aria Eshraghi, Marius Goldenberg
-
Publication number: 20130281040Abstract: A radio frequency (RF) power amplifier (PA) is reconfigured to operate in a low power mode from a high power mode. The RF PA has a first RF amplifier is connected to the first and second inputs of a first transformation network. The RF PA has a second a second RF amplifier connected to a second transformation network. During high power mode, both RF amplifiers drive a load coupled to the transformation networks. In low power mode the first RF amplifier is disabled and the first and second inputs of the first transformation are coupled together so as to change the load impedance seen by the second RF amplifier. The second RF amplifier continues to supply power to the load during operation in the low power mode.Type: ApplicationFiled: March 13, 2013Publication date: October 24, 2013Applicant: BLACK SAND TECHNOLOGIES, INC.Inventors: Susanne A. Paul, Marius Goldenberg
-
Publication number: 20130093516Abstract: A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.Type: ApplicationFiled: December 3, 2012Publication date: April 18, 2013Inventors: Susanne Paul, Marius Goldenberg
-
Patent number: 8324973Abstract: A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.Type: GrantFiled: December 8, 2009Date of Patent: December 4, 2012Assignee: Black Sand Technologies, Inc.Inventors: Susanne Paul, Marius Goldenberg
-
Patent number: 8274330Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.Type: GrantFiled: October 31, 2007Date of Patent: September 25, 2012Assignee: Black Sand Technologies, Inc.Inventors: Susanne A. Paul, Timothy J. Dupuis