Abstract: It is an object of the present invention to allow a cell to produce a protein at a high level using a medium containing an enzymatic degradation product of fish meat or a fish meat extract. A method of culturing a cell comprising starting culturing in an initial medium and feeding at least once a feed medium to the initial medium during culturing, wherein at least one of the initial medium or the feed medium contains an enzymatic degradation product of fish meat or a fish meat extract added thereto. A method of producing a protein of interest using the above culture method.

Abstract: An image source apparatus includes: a driver, operable to send the image data to the printer and to cause the printer to execute the printing based on the image data, in accordance with a prescribed standard; an application processor; and a storage. When the driver receives an initialization request from the application processor, the driver, after notifying the application processor of an acknowledgement of the initialization request, carries out an initialization process in accordance with the received initialization request, and the driver, after finishing the initialization process, acquires information on a plurality of items related to a specification of the printer from the printer in accordance with the prescribed standard and stores the information in the storage.

Abstract: A charged-particle beam lithography apparatus includes a projection system that projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system has a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electrical field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate a charged-particle beam that has entered the symmetrical magnetic double lens.

Abstract: This invention discloses a charged-particle beam lithography apparatus which comprises a projection system which projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system comprises a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electric field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate the charged-particle beam which has entered the symmetrical magnetic doublet lens.

Abstract: An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.

Abstract: It is an object of the present invention to allow a cell to produce a protein at a high level using a medium containing an enzymatic degradation product of fish meat or a fish meat extract. A method of culturing a cell comprising starting culturing in an initial medium and feeding at least once a feed medium to the initial medium during culturing, wherein at least one of the initial medium or the feed medium contains an enzymatic degradation product of fish meat or a fish meat extract added thereto. A method of producing a protein of interest using the above culture method.

Abstract: An image source apparatus includes: a driver, operable to send the image data to the printer and to cause the printer to execute the printing based on the image data, in accordance with a prescribed standard; an application processor; and a storage. When the driver receives an initialization request from the application processor, the driver, after notifying the application processor of an acknowledgement of the initialization request, carries out an initialization process in accordance with the received initialization request, and the driver, after finishing the initialization process, acquires information on a plurality of items related to a specification of the printer from the printer in accordance with the prescribed standard and stores the information in the storage.

Abstract: An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.

Abstract: A Petunia cultivar particularly distinguished by a purple flower with a dark purple edge, decumbent growth habit and small flower diameter.

Abstract: An electron beam exposure apparatus for exposing wafer with an electron beam, includes: a first electromagnetic lens system for making the electron beam incident substantially perpendicularly on a first plane be incident on a second plane substantially perpendicularly; a second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens provided within the first electromagnetic lens system for correcting rotation of the electron beam caused by at least the first electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer; and a deflection-correction optical system provided within the second electromagnetic lens system for correcting deflection aberration caused by the deflection system.

Abstract: A projection apparatus includes a charged particle beam source, a reduction lens, a charged particle shaping aperture having an arcuate opening, a collimator lens, and first and second projection lenses. A charged particle beam emerging from the charged particle beam source irradiates a mask placed on a mask stage to transfer a pattern on the mask onto a sample on a sample stage. The first and second projection lenses can move their first and second principal plane positions with an excitation strength ratio control circuit.

Abstract: A blur and image distortion of an electron beam on a sample are reduced even at a large converging angle of the electron beam. A reduction projection optical system (120) has an immersion lens (108) on the image plane (wafer 111) side. A collimator lens (pupil control optical system) 106 is arranged between the reduction projection optical system (120) and its object plane (mask 104). The collimator lens (106) arranges the entrance pupil (110) of the reduction projection optical system (120) at a finite position from the image plane on the downstream side of the image plane of the reduction projection optical system (120). This can minimize any blur and image distortion of an electron beam on a sample.

Abstract: An electron beam exposure apparatus for exposing wafer with an electron beam, includes: the first electromagnetic lens system for making the electron beam incident substantially perpendicularly on the first plane be incident on the second plane substantially perpendicularly; the second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens for correcting rotation of the electron beam caused by the first electromagnetic lens system and/or the second electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer, that is to be irradiated with the electron beam; and a deflection-correction optical system for correcting deflection aberration caused by the deflection system.

Abstract: A projection apparatus includes a charged particle beam source, a reduction lens, a charged particle shaping aperture having an arcuate opening, a collimator lens, and first and second projection lenses. A charged particle beam emerging from the charged particle beam source irradiates a mask placed on a mask stage to transfer a pattern on the mask onto a sample on a sample stage. The first and second projection lenses can move their first and second principal plane positions with an excitation strength ratio control circuit. An image distortion amount is thus corrected.

Abstract: A blur and image distortion of an electron beam on a sample are reduced even at a large converging angle of the electron beam. A reduction projection optical system (120) has an immersion lens (108) on the image plane (wafer 111) side. A collimator lens (pupil control optical system) 106 is arranged between the reduction projection optical system (120) and its object plane (mask 104). The collimator lens (106) arranges the entrance pupil (110) of the reduction projection optical system (120) at a finite position from the image plane on the downstream side of the image plane of the reduction projection optical system (120). This can minimize any blur and image distortion of an electron beam on a sample.

Abstract: This invention provides an electron beam exposure apparatus and electron lens which realize high resolution and high throughput simultaneously. In an electron beam exposure apparatus for irradiating a mask having a transfer pattern with an electron beam and projecting and transferring the pattern onto a substrate using an electron projecting lens, the electron projecting lens has a magnetic doublet lens. Each of the front- and rear-side electromagnetic lens sections of the magnetic doublet lens is constructed of a non-rotational lens. In each electro magnetic lens section, the non-rotational lens is constructed of a pair of electromagnetic lenses having symmetrical shapes.

Abstract: This invention is to provide an electron beam exposure apparatus and electron lens which realize high resolution and high throughput simultaneously. In an electron beam exposure apparatus for irradiating a mask having a transfer pattern with an electron beam and projecting and transferring the pattern onto a substrate using an electron projecting lens, the electron projecting lens has a magnetic doublet lens. Each of the front- and rear-side electromagnetic lens sections of the magnetic doublet lens is constructed by a non-rotational lens. In each electromagnetic lens section, the non-rotational lens is constructed by a pair of electromagnetic lenses having symmetrical shapes.

Abstract: This invention provides an electron beam projection exposure apparatus which can obtain a large irradiation width while maintaining an electron beam intensity required for exposure. An electron beam emitted by an electron gun (1) is transmitted through a condenser lens (2) and field lens (3), and illuminates a mask (4). The electron beam transmitted through the mask (4) is imaged and irradiated onto a wafer (7) via reduction projection lenses (5, 6), thus forming a pattern on the mask (4) on the wafer (7) by exposure. The electron gun (1) has an electron source, an electron emission surface of which has a circularly recessed central portion, and a ring-shaped electron beam emitted by the peripheral portion of the electron emission surface is used in exposure.

Abstract: A Petunia cultivar particularly distinguished by a purple flower with a dark purple edge, decumbent growth habit and small flower diameter.

Abstract: A Petunia variety named ‘Hoobenihime’ particularly distinguished by having red-purple flowers with a dark purple edge and small flower size is disclosed.