Abstract: A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator, the method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.

Abstract: A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Abstract: Disclosed herein is a solid-state image pickup device which includes: a light-receiving unit for photoelectric conversion of incident light; and a charge transfer unit of an n-channel insulating gate type configured to transfer a signal charge photoelectrically converted in the light-receiving unit; wherein the charge transfer unit has an insulating film formed on a transfer electrode and having a negative fixed charge.

Abstract: The present invention relates to a negative material for a non-aqueous rechargeable battery and a non-aqueous rechargeable battery including the same. The negative material for a non-aqueous rechargeable battery includes lithium vanadium oxide that is obtained by mixing a lithium compound such as lithium carbonate (Li2CO3) and a vanadium compound such as vanadium pentaoxide (V2O5) with an organic acid such as oxalic acid ((COOH2) to obtain an organic acid salt precursor and firing the organic acid salt precursor. The negative material for a non-aqueous rechargeable battery can improve charge and discharge characteristics of a non-aqueous rechargeable battery due to uniform composition.

Abstract: A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

Abstract: A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

Abstract: A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

Abstract: A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

Abstract: A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

Abstract: A method of producing a compound oxide of elements including at least one of thallium, bismuth, lead, antimony, yttrium, each of rare earth elements, each of transition metal elements, each of alkali metal elements and each of alkaline earth metal elements. The method is comprised of the steps of (i) reacting at least one of carbonate, basic carbonate, hydroxide and co-precipitates of each of the above-mentioned elements with an amount of citric acid that is less than the weight equivalent of citric acid needed to form a completely citrated compound, and (ii) calcining the partly citrated compound. The co-precipitate can be one of a carbonate, a basic carbonate and a hydroxide of each of the above-mentioned elements.

Abstract: A composite oxide synthesized by a citrating process and utilized in functional ceramics materials is prepared by the following process. Co-precipitants or mixtures of at least one component selected from the group consisting of carbonates, basic copper and/or hydroxides of elements which compose a composite oxide are reacted with citric acid in an aqueous solution or in an organic solvent. The elements are selected from at least one element of the group consisting of Y, rare earth elements, transition elements, and alkali metal or alkaline earth metal elements. The citrate compound formed is baked to complete the composite oxide.The composite oxide synthesized by this invention has superconduction at the most temperature of 93.degree. K. with excellent Meissner effect.