Abstract: A semiconductor laser element is realized with high beam quality (index M2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice R3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle.

Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Abstract: A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al?Ga1-?As (0<?<1) or (Al?Ga1-?)?In1-?P (0<=?<1, 0<?<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al?Ga1-?As and (Al?Ga1-?)?In1-?P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.

Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).

Abstract: When an end-face-emitting photonic crystal laser element 10 is seen in an X axis, one end of an upper electrode E2 overlaps a laser light exit surface SF, the upper electrode E2 and an opposite end face SB are separated from each other, the upper electrode E2 is separated from both lateral end faces SR, SL, and one end of an active layer 3B overlaps the laser light exit surface SF.

Abstract: A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al?Ga1-?As (0<?<1) or (Al?Ga1-?)?In1-?P (0<=?<1, 0<?<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al?Ga1-?As and (Al?Ga1-?)?In1-?P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.

Abstract: A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.

Abstract: Provided is a two-dimensional photonic crystal surface emitting laser having an active layer for generating light of a predetermined wavelength range by an injection of electric current and a two-dimensional photonic crystal layer provided on one side of the active layer, the layer having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged.

Abstract: According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (??) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (?3) of the other laser beam is set to be less than 90 degrees.

Abstract: A photonic crystal laser capable of producing a radially-polarized halo-shaped laser beam having a smaller width than conventional beams includes: an active layer; a ring-shaped photonic crystal including a plate-shaped base body on one side of the active layer, the base body having a number of modified refractive index areas of the same shape, the modified refractive index areas having a refractive index different from the base body and periodically arranged in the circumferential direction of a ring, and each of the modified refractive index areas being asymmetrically shaped with respect to an axis extending through the center of the modified refractive index area in the radial direction of the ring; a first and second electrode facing each other across the active layer and the ring-shaped photonic crystal; and a window provided in the second electrode capable of allowing passage of a laser light generated from the ring-shaped photonic crystal.

Abstract: A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.

Abstract: A semiconductor light emitting element includes an electrode 8, an active layer 3, a photonic crystal layer 4, and an electrode 9. Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8, the active layer 3, the photonic crystal layer 4, and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8a2 of the opening 8a when viewed from the axis line direction of the X-axis. The end 9e1 of the electrode 9 and the end 8e1 of the opening 8a substantially coincide with each other when viewed from the axis line direction of the X-axis.

Abstract: A two-dimensional photonic crystal surface emitting laser light source includes a two-dimensional photonic crystal made of a plate-shaped body material provided with a periodic arrangement of identically-shaped holes and an active layer. The hole is not located on a first half-line extending from the gravity center of the hole, while the hole is located on a second half-line extending in the direction opposite to the first half-line. Injecting electric charges into the active layer generates light, which creates an electric field encircling the gravity center. For a given point on the second half-line where the hole is located, there is no hole at a point that is symmetrical to the aforementioned point with respect to the gravity center, so that the electric field vectors at the two points do not cancel each other and the laser light is stronger than conventional examples.

Abstract: A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.

Abstract: According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (??) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (?3) of the other laser beam is set to be less than 90 degrees.

Abstract: When an end-face-emitting photonic crystal laser element 10 is seen in an X axis, one end of an upper electrode E2 overlaps a laser light exit surface SF, the upper electrode E2 and an opposite end face SB are separated from each other, the upper electrode E2 is separated from both lateral end faces SR, SL, and one end of an active layer 3B overlaps the laser light exit surface SF.

Abstract: The present invention intends to provide a surface-emitting laser light source using a two-dimensional photonic crystal in which the efficiency of extracting light in a direction perpendicular to the surface is high. In a laser light source provided with a two-dimensional photonic crystal layer created from a plate-shaped matrix body in which a large number of holes are periodically arranged and an active layer arranged on one side of the two-dimensional photonic crystal layer, the holes are created to be columnar with a predetermined cross-sectional shape such as a circular shape, and the main axis of each of the columnar holes is tilted to a surface of the matrix body. When provided with this two-dimensional photonic crystal layer, the surface-emitting laser source using a two-dimensional photonic crystal has a Q? value (i.e.

Abstract: In conventional organic EL light-emitting devices, the ITO used for a transparent electrode has a refractive index of about 2.0 larger than the refractive index of 1.5 of a transparent glass substrate. As a result, the mode of most of light traveling from the transparent electrode toward the glass substrate is the transparent electrode guided mode, and no light is emitted from the transparent electrode toward the glass substrate. According to the invention, the light extraction efficiency of conventional light-emitting devices such as organic EL light-emitting devices is improved by using mode conversion means so as to solve the problem that conventional light-emitting devices such as organic EL light-emitting devices have low light extraction efficiencies. A light-emitting device of the invention comprises a light-emitting layer on a substrate and mode conversion means for converting the mode from the guided mode into an emission mode.

Abstract: A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.

Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).