Abstract: A wavelength conversion device that includes a plurality of crystal layers adjacent to one another such that crystal-axis orientations thereof are alternately arranged, the plurality of crystal layers each including a first-thickness portion having a first thickness and a second-thickness portion having a second thickness smaller than the first thickness; and an adhesive layer in at least part of a gap between adjacent second-thickness portions of the plurality of crystal layers and with which the plurality of crystal layers are bonded to one another.

Abstract: A wavelength conversion device that includes a plurality of crystal layers adjacent to one another such that crystal-axis orientations thereof are alternately arranged, the plurality of crystal layers each including a first-thickness portion having a first thickness and a second-thickness portion having a second thickness smaller than the first thickness; and an adhesive layer in at least part of a gap between adjacent second-thickness portions of the plurality of crystal layers and with which the plurality of crystal layers are bonded to one another.

Abstract: A NAND flash memory integrated circuit chip includes a cell area and a peripheral area with structures of different heights, with higher structures in the peripheral area to provide low resistance and lower structures in the memory array so that the risk of word line collapse is maintained at acceptable levels.

Abstract: A NAND flash memory integrated circuit chip includes a cell area and a peripheral area with structures of different heights, with higher structures in the peripheral area to provide low resistance and lower structures in the memory array so that the risk of word line collapse is maintained at acceptable levels.

Abstract: A piezoelectric vibrating component that includes a plate-shaped seat having first and second opposed surfaces, and a piezoelectric diaphragm attached to the first surface. The piezoelectric diaphragm has an expansion vibration mode as a main vibration mode. The piezoelectric vibrating component is used with the second surface of the seat attached to a vibrated body. The seat is structured so that the piezoelectric vibrating component entirely vibrates in the expansion vibration mode as the main vibration mode when the piezoelectric diaphragm vibrates.

Abstract: In order to provide a display device including a liquid crystal display element and a light-emitting display element that are controlled so as to be individually driven, a display device (1) of the present invention includes a glass substrate (11), a glass substrate (31) facing the glass substrate (11), a pixel electrode (40) which is provided between the glass substrates (11) and (31) and which also serves as a light reflecting layer, a reflective liquid crystal display element (85) including a liquid crystal layer (20), an organic EL display element (86) which includes an organic EL material layer (52) provided between the glass substrate (31) and the pixel electrode (40) and which perform display operation by employing light emitted from the organic EL material layer (52), a TFT (36) which is provided between the glass substrates (11) and (31) and which controls driving of the liquid crystal display element (85), and a TFT (37) which is provided between the glass substrates (11) and (31) and which controls

Abstract: The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.

Abstract: The invention relates to an area lighting device using an LED as a light source and a liquid crystals display having the same. An object is to provide an area lighting device which can provide stable display quality and a liquid crystal display device having the same. An area lighting device is configured to have a light source part provided with a plurality of LEDs; a dummy liquid crystal panel which has a pair of substrates and a liquid crystal layer encapsulated between the substrates, and to which light from the light source part partially enters; a chromaticity sensor which senses a chromaticity of light transmitted through the dummy liquid crystal panel; and an LED control part which compares the sensed chromaticity with a set target value, and controls the plurality of the LEDs so that the chromaticity becomes close to the target value.

Abstract: An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.

Abstract: A reflective electrode, a transparent electrode, a TFT connected to the reflective electrode and a TFT connected to the transparent electrode are formed in each picture element. A first data signal is written into the reflective electrode via the TFT, a second data signal is written into the transparent electrode via the TFT. In this way, the individual data signals are respectively written into the reflective electrode and the transparent electrode, and thereby excellent display quality can be obtained either when used as a transmissive liquid crystal display device or when used as a reflective liquid crystal display device.

Abstract: A liquid crystal display has pixel electrodes, a common electrode, a liquid crystal layer provided between the pixel electrodes and the common electrode, and a back light that supplies light transmitting through the liquid crystal layer, further has a control circuit that applies a drive voltage corresponding to image data between the pixel electrodes and the common electrode such that the polarity of the drive voltage is inverted for each predetermined period. Within a frame period, the control circuit applies a drive voltage of a first polarity in a first period, applies a drive voltage of a second polarity opposite to the first polarity, which is the same voltage as the drive voltage of the first polarity, in a second period after the first period, and controls such that the back light is turned off in the first period and turned on in the second period.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.

Abstract: In a TFT substrate partially constituting a liquid crystal panel, gate bus lines and data bus lines are provided in orthogonal directions to each other, and a switching element (TFT) is provided in the vicinity of each of intersecting points of these bus lines. Further, Cs bus lines forming auxiliary capacitances (Cs) together with picture element electrodes each of which is provided for each picture element are provided in the direction parallel to the data bus lines. The gate bus lines, the data bus lines, and the Cs bus lines are provided at equal wiring intervals, respectively, and picture element regions each having the shape of a square are delimited by the Cs bus lines as boundaries.

Abstract: A liquid crystal display has pixel electrodes, a common electrode, a liquid crystal layer provided between the pixel electrodes and the common electrode, and a back light that supplies light transmitting through the liquid crystal layer, further has a control circuit that applies a drive voltage corresponding to image data between the pixel electrodes and the common electrode such that the polarity of the drive voltage is inverted for each predetermined period. Within a frame period, the control circuit applies a drive voltage of a first polarity in a first period, applies a drive voltage of a second polarity opposite to the first polarity, which is the same voltage as the drive voltage of the first polarity, in a second period after the first period, and controls such that the back light is turned off in the first period and turned on in the second period.

Abstract: An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.

Abstract: An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.

Abstract: The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.

Abstract: The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.

Abstract: The display device comprises: a substrate 50 having a plurality of light emitting elements on one surface thereof, and a substrate 10 having a circuit for controlling the plurality of the light emitting elements, bonded to said one surface of the substrate 50, and sealing a space where the plurality of the light emitting elements are formed. This makes it possible to form the light emitting elements on a flat surface, and the degradation of the emission characteristics of the light emitting elements can be prevented. The aperture ratio and the luminance of the display device can be also increased.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.