Abstract: A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between.

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: An acrylic rubber containing acrylate monomer units, methacrylate monomer units, and crosslinkable monomer units, wherein a glass transition temperature is ?20° C. or less, a change ratio in volume after a crosslinked rubber of the acrylic rubber is immersed in IRM903 oil at 150±2° C. for 72 hours is 0 to 100%, and a change ratio in weight after a crosslinked rubber of the acrylic rubber is immersed in hot water at 150±2° C. for 96 hours and dried is ?5.0 to 0%.

Abstract: A light emitting element includes a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. In the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: A light emitting element includes a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. In the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.

Abstract: A mattress including: a support surface to support a user; a mattress main body that constitutes the support surface; at least one pressure sensor having a flexible sheet shape to detect a pressure acting on the support surface; a support surface cover positioned with respect to the mattress main body and arranged so as to cover the support surface; and at least one positioning member provided to the support surface cover to permit a movement of the pressure sensor with respect to the support surface cover in a planar direction while limiting an amount of the movement of the pressure sensor with respect to the support surface cover in the planar direction such that the pressure sensor is positioned on the support surface by the positioning member.

Abstract: A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

Abstract: A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.

Abstract: A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror.

Abstract: An imaging device (10) is configured by being provided with an image pickup element (40) where an imaging surface (41) having a concave surface facing an object side is formed, an imaging optical system (20) which forms an image on the imaging surface (41) in a range smaller than the imaging surface (41), and an oscillating drive section (30) which oscillating-drives the imaging optical system (20) so that a direction of an optical axis Z of the imaging optical system changes. The imaging element (40) captures a first formed by the imaging optical system (20) with a direction of the optical axis Z set to a first direction and a 2nd formed by the imaging optical system (20) with a direction of the optical axis Z set to a 2nd direction, in different regions in the imaging surfaces (41).

Abstract: A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between.

Abstract: The negative electrode active material has a core portion containing at least one of silicon, tin, or germanium and a covering portion covering at least a part of a surface of the core portion and the covering portion contains a phosphoric acid-containing compound.

Abstract: A safety device is provided to prevent danger caused by collisions between a moving part of an automatic device and a detection target, and includes a collision detection member, detecting approach or contact of the moving part and the detection target; a moving part control device, accelerating, decelerating or stopping movements of the moving part based on a detection signal from the collision detection member; a dangerous state detection member, setting a danger region where the moving part and the detection target can collide, and detecting whether the moving part or the detection target is located in the danger region; and a collision detection control device, enabling or disabling, based on the detection signal from the dangerous state detection member, the detections of the approach or contact of the moving part and the detection target by the collision detection member.

Abstract: Provided is a sensor device having a structure, with which the use of a simple structure enables accurate detection of a worker, etc. approaching or contacting a moving part of an automatic device. This sensor device detects the approach or contact of a detection target with a mobile moving part that is provided in an automatic device. The moving part is provided with a first sensor and second sensor for detecting the approach or contact of the detection target. The first sensor and second sensor have the same detection principle and the detection circuit of the first sensor and the detection circuit of the second sensor have the same structure.

Abstract: A sensor device is provided which detects approach or in contact of a detection target with a moving part of an automatic device, and comprises a first sensor that detects the detection target at a position away from the moving part, a second sensor that detects the detection target at a position closer to the moving part than the first sensor, and a third sensor that detects the detection target at a position closer to the moving part than the first sensor. The approach of the detection target to the moving part is detected by both the second sensor and the third sensor at a position closer to the moving part than a position that can be detected by the first sensor.

Abstract: A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: A nitride semiconductor laser according to an embodiment of the disclosure includes a vertical resonator layer that includes an active layer, a current confining layer having an opening, and two DBR layers interposing the active layer and the opening therebetween. The nitride semiconductor laser further includes a resonance suppressing part disposed at a position that is outside the vertical resonator layer and that is opposed to at least the opening.