Abstract: A mask for X-ray lithography includes a transparent thin film (1) of SiC, an X-ray absorbing pattern (2) of Au formed on the surface of the transparent thin film (1) and a support member (3) of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing the back surface of the transparent thin film (1). A transparent conductive thin film (5) of In.sub.2 O.sub.3 is formed over the back surfaces of the exposed transparent thin film (1) and the support member (3).

Abstract: A WSI device comprises a semiconductor substrate having a wafer scale size. An integrated circuit having a unified function is formed on a main surface of the semiconductor substrate. The semiconductor substrate defines various cutouts centrally and/or peripherally thereof. The cutouts serve to extend peripheral regions of the semiconductor substrate. Bonding pads are formed along the extended peripheral regions of the semiconductor substrate. As a result, the number of bonding pads that can be formed is increased to promote multi-functioning of the WSI device.

Abstract: A mask for X-ray lithography includes a transparent thin film (1) formed preferably of SiC, an X-ray absorbing pattern (2) formed preferably of Au formed on the surface of the transparent thin film (1) and a support member (3) formed preferably of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing therethrough the back surface of the transparent thin film (1). A transparent conductive thin film (5), preferably of In.sub.2 O.sub.3, is formed over the back surfaces of both the exposed transparent thin film (1) and the support member (3) to facilitate relaxation electrification of the transparent thin film (1) as may happen during X-ray exposure thereof.

Abstract: A charged beam pattern defect inspection apparatus for inspecting pattern defects on materials such as masks or wafers comprising: a collecting charged beam irradiation apparatus including scanning deflection device for accelerating and focusing the scanning beam, and a detector for detecting phenomenon produced by incident particles such as reflected electrons, secondary electrons, cathodeluminescent light, X rays, or absorption currents; a scanning and synchronous signal generator for generating a scanning signal to be control the scanning deflection means and a synchronous signal to fed into an A/D converter; a two-dimensional video memory including an A/D converter and an address signal generator; a video signal operator for operating the video signal stored in the two-dimensional video memory; a stage driving apparatus for driving a stage for holding the material to be inspected, which includes a position detector for detecting the position of the stage; an auxiliary memory device for storing inspection

Abstract: A method of manufacturing a chromium oxide film which comprises the steps of scattering particles of chromium metal by means of, for example, sputtering in an atmosphere selected from the group consisting of CO.sub.2 gas, CO gas, a mixture of CO.sub.2 gas and CO gas, a mixture of CO.sub.2 gas and inert gas, a mixture of CO gas and inert gas and a mixture of CO.sub.2 gas, CO gas and inert gas; oxidizing the scattered particles of chromium metal with the atmosphere; and depositing the resultant chromium oxide film on a substrate.