Patents by Inventor Suvi Haukka

Suvi Haukka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190382887
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: July 2, 2019
    Publication date: December 19, 2019
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Patent number: 10510530
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: December 17, 2019
    Assignee: ASM International N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Publication number: 20190375638
    Abstract: Methods of forming carbon nanotubes and structures and devices including carbon nanotubes are disclosed. Methods of forming the carbon nanotubes include patterning a surface of a substrate with polymeric material, removing portions of the polymeric material to form exposed substrate surface sections, and forming the carbon nanotubes on the exposed substrate sections.
    Type: Application
    Filed: May 29, 2019
    Publication date: December 12, 2019
    Inventor: Suvi Haukka
  • Publication number: 20190252195
    Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.
    Type: Application
    Filed: February 14, 2018
    Publication date: August 15, 2019
    Inventor: Suvi Haukka
  • Publication number: 20190242019
    Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 8, 2019
    Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
  • Patent number: 10344378
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: July 9, 2019
    Assignee: ASM International N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Patent number: 10343920
    Abstract: Methods of forming carbon nanotubes and structures and devices including carbon nanotubes are disclosed. Methods of forming the carbon nanotubes include patterning a surface of a substrate with polymeric material, removing portions of the polymeric material to form exposed substrate surface sections, and forming the carbon nanotubes on the exposed substrate sections.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: July 9, 2019
    Assignee: ASM IP Holding B.V.
    Inventor: Suvi Haukka
  • Publication number: 20190172708
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Application
    Filed: November 15, 2018
    Publication date: June 6, 2019
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Publication number: 20190153593
    Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.
    Type: Application
    Filed: January 25, 2019
    Publication date: May 23, 2019
    Inventors: Chiyu Zhu, Kiran Shrestha, Suvi Haukka
  • Patent number: 10280519
    Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: May 7, 2019
    Assignee: ASM IP HOLDING B.V.
    Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
  • Patent number: 10283319
    Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: May 7, 2019
    Assignee: ASM IP HOLDING B.V.
    Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
  • Patent number: 10273584
    Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: April 30, 2019
    Assignee: ASM IP HOLDING B.V.
    Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
  • Patent number: 10204790
    Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: February 12, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaako Anttila, Yukihiro Mori
  • Publication number: 20190043962
    Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
    Type: Application
    Filed: June 4, 2018
    Publication date: February 7, 2019
    Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
  • Patent number: 10190213
    Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: January 29, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Chiyu Zhu, Kiran Shrestha, Suvi Haukka
  • Publication number: 20190006586
    Abstract: Methods are provided for depositing doped chalcogenide films. In some embodiments the films are deposited by vapor deposition, such as by atomic layer deposition (ALD). In some embodiments a doped GeSe film is formed. The chalcogenide film may be doped with carbon, nitrogen, sulfur, silicon, or a metal such as Ti, Sn, Ta, W, Mo, Al, Zn, In, Ga, Bi, Sb, As, V or B. In some embodiments the doped chalcogenide film may be used as the phase-change material in a selector device.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 3, 2019
    Inventors: Jan Willem Maes, Suvi Haukka
  • Publication number: 20180350587
    Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.
    Type: Application
    Filed: May 4, 2018
    Publication date: December 6, 2018
    Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia, Eva Tois, Suvi Haukka, Toshiya Suzuki
  • Patent number: 10147600
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: December 4, 2018
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Patent number: 10087522
    Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: October 2, 2018
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Eric Shero, Suvi Haukka, Robert Brennan Milligan, Michael Eugene Givens
  • Publication number: 20180211834
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Application
    Filed: January 17, 2018
    Publication date: July 26, 2018
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba