Abstract: A method for manufacturing an aluminum circuit board including a step of spraying a heated metal powder containing aluminum particles and/or aluminum alloy particles to a ceramic base material, and of forming a metal layer on a surface of the ceramic base material. A temperature of at least a part of the metal powder is higher than or equal to a softening temperature of the metal powder and lower than or equal to a melting point of the metal powder at a time point of reaching the surface of the ceramic base material. A velocity of at least a part of the metal powder is greater than or equal to 450 m/s and less than or equal to 1000 m/s at the time point of reaching the surface of the ceramic base material.

Abstract: A method for producing a ceramic circuit board including a ceramic substrate and a metal circuit formed on the ceramic substrate. The disclosed method includes a step of forming the first metal layer in contact with the ceramic substrate by spraying a first metal powder containing at least either of aluminum particles or aluminum alloy particles together with an inert gas onto a surface of a ceramic substrate from a nozzle, in which the first metal powder is heated to from 10° C. to 270° C. and then ejected from the nozzle 10 and a gauge pressure of the inert gas at an inlet of the nozzle 10 is from 1.5 to 5.0 MPa, a step of subjecting the first metal layer to a heat treatment in an inert gas atmosphere, and the like.

Abstract: A method for producing a ceramic circuit board including a ceramic substrate and a metal circuit formed on the ceramic substrate. The disclosed method includes a step of forming the first metal layer in contact with the ceramic substrate by spraying a first metal powder containing at least either of aluminum particles or aluminum alloy particles together with an inert gas onto a surface of a ceramic substrate from a nozzle, in which the first metal powder is heated to from 10° C. to 270° C. and then ejected from the nozzle 10 and a gauge pressure of the inert gas at an inlet of the nozzle 10 is from 1.5 to 5.0 MPa, a step of subjecting the first metal layer to a heat treatment in an inert gas atmosphere, and the like.

Abstract: A method for manufacturing an aluminum circuit board including a step of spraying a heated metal powder containing aluminum particles and/or aluminum alloy particles to a ceramic base material, and of forming a metal layer on a surface of the ceramic base material. A temperature of at least a part of the metal powder is higher than or equal to a softening temperature of the metal powder and lower than or equal to a melting point of the metal powder at a time point of reaching the surface of the ceramic base material. A velocity of at least a part of the metal powder is greater than or equal to 450 m/s and less than or equal to 1000 m/s at the time point of reaching the surface of the ceramic base material.

Abstract: Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.

Abstract: Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.

Abstract: A method for producing a ceramic circuit board including a ceramic substrate and a metal layer formed on the ceramic substrate, includes a step of forming the metal layer on the ceramic substrate by spraying a metal powder after accelerating the metal powder to a velocity of from 250 to 1050 m/s as well as heating the metal powder to from 10° C. to 270° C. and a step of subjecting the ceramic substrate and the metal layer to a heat treatment in an inert gas atmosphere.

Abstract: [Problem] To provide highly heat-resistant and radiation-resistant radiation measuring equipment. [Solution] Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.

Abstract: [Problem] To provide highly heat-resistant and radiation-resistant radiation measuring equipment. [Solution] Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.

Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.

Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.

Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.

Abstract: Provided are an ?-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The ?-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12-(m+n)(Al)m+n(O)n(N)16-n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an ?-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the ?-SiAlON is 5 ?m or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the ?-SiAlON is preferably 0.56 or more.

Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.

Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.

Abstract: Provided is a production method of a ?-sialon phosphor that europium ions are solid-solved in ?-sialon, including a mixing process for mixing raw materials of the ?-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the ?-sialon phosphor; a HIP treatment process in which the ?-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the ?-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the ?-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a ?-sialon phosphor, a ?-sialon phosphor excellent in luminescence intensity is obtained.

Abstract: Provided are an ?-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The ?-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12?(m+n)(Al)m+n(O)n(N)16?n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an ?-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the ?-SiAlON is 5 ?m or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the ?-SiAlON is preferably 0.56 or more.

Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.

Abstract: A method for manufacturing ?-sialon, including: a mixing process wherein at least one of aluminum oxide and silicon oxide, silicon nitride, aluminum nitride, and europium compound are mixed; a burning process wherein the mixture having undergone the mixing process is heated at the temperature hither than 1950° C. but not exceeding 2200° C. for 10 hours or longer; and a heat treatment process wherein heat treatment is conducted after the burning process at the temperature from 1300° C. to 1600° C. in an atmosphere of inert gas other than nitrogen at the partial pressure of 10 kPa or lower.

Abstract: A method of manufacturing ?-SiAlON represented by a general formula Si6-zAlzOzN8-z:Eu, including a baking step for baking a powdered material that contains Al content from 0.3 to 1.2 mass %, O content from 0.15 to 1 mass %, O/Al molar ratio from 0.9 to 1.3, Si content from 58 to 60 mass %, N content from 37 to 40 mass %, N/Si molar ratio from 1.25 to 1.45, and Eu content from 0.3 to 0.7 mass %. The baking step is a step of baking the powdered material in a nitrogen atmosphere at temperatures from 1850° C. to 2050° C., and the manufactured ?-SiAlON satisfies 0.280?x?0.340 and 0.630?y?0.675 on the CIExy chromaticity coordinate.