Patents by Inventor Suzuya Yamada

Suzuya Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200128677
    Abstract: A method for producing a ceramic circuit board including a ceramic substrate and a metal circuit formed on the ceramic substrate. The disclosed method includes a step of forming the first metal layer in contact with the ceramic substrate by spraying a first metal powder containing at least either of aluminum particles or aluminum alloy particles together with an inert gas onto a surface of a ceramic substrate from a nozzle, in which the first metal powder is heated to from 10° C. to 270° C. and then ejected from the nozzle 10 and a gauge pressure of the inert gas at an inlet of the nozzle 10 is from 1.5 to 5.0 MPa, a step of subjecting the first metal layer to a heat treatment in an inert gas atmosphere, and the like.
    Type: Application
    Filed: January 16, 2018
    Publication date: April 23, 2020
    Applicant: DENKA COMPANY LIMITED
    Inventors: Atsushi SAKAI, Yoshitaka TANIGUCHI, Suzuya YAMADA
  • Publication number: 20200120809
    Abstract: A method for manufacturing an aluminum circuit board including a step of spraying a heated metal powder containing aluminum particles and/or aluminum alloy particles to a ceramic base material, and of forming a metal layer on a surface of the ceramic base material. A temperature of at least a part of the metal powder is higher than or equal to a softening temperature of the metal powder and lower than or equal to a melting point of the metal powder at a time point of reaching the surface of the ceramic base material. A velocity of at least a part of the metal powder is greater than or equal to 450 m/s and less than or equal to 1000 m/s at the time point of reaching the surface of the ceramic base material.
    Type: Application
    Filed: February 22, 2018
    Publication date: April 16, 2020
    Applicants: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, DENKA COMPANY LIMITED
    Inventors: Seiji KURODA, Hiroshi ARAKI, Akira HASEGAWA, Makoto WATANABE, Atsushi SAKAI, Yoshitaka TANIGUCHI, Suzuya YAMADA
  • Patent number: 10533130
    Abstract: Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: January 14, 2020
    Assignees: Denka Company Limited, National University Corporation Gunma University, National Institutes For Quantum And Radiological Science And Technology
    Inventors: Wataru Kada, Kenta Miura, Osamu Hanaizumi, Tomihiro Kamiya, Takahiro Satoh, Junichi Susaki, Suzuya Yamada
  • Publication number: 20190367808
    Abstract: Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.
    Type: Application
    Filed: May 17, 2019
    Publication date: December 5, 2019
    Inventors: Wataru Kada, Kenta Miura, Osamu Hanaizumi, Tomihiro Kamiya, Takahiro Satoh, Junichi Susaki, Suzuya Yamada
  • Publication number: 20190364667
    Abstract: A method for producing a ceramic circuit board including a ceramic substrate and a metal layer formed on the ceramic substrate, includes a step of forming the metal layer on the ceramic substrate by spraying a metal powder after accelerating the metal powder to a velocity of from 250 to 1050 m/s as well as heating the metal powder to from 10° C. to 270° C. and a step of subjecting the ceramic substrate and the metal layer to a heat treatment in an inert gas atmosphere.
    Type: Application
    Filed: January 16, 2018
    Publication date: November 28, 2019
    Applicants: SHINSHU UNIVERSITY, DENKA COMPANY LIMITED
    Inventors: Kazuhiko SAKAKI, Atsushi SAKAI, Suzuya YAMADA, Yoshitaka TANIGUCHI
  • Patent number: 10294419
    Abstract: [Problem] To provide highly heat-resistant and radiation-resistant radiation measuring equipment. [Solution] Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: May 21, 2019
    Assignees: Denka Company Limited, National University Corporation Gunma University, National Institutes For Quantum And Radiological Science And Technology
    Inventors: Wataru Kada, Kenta Miura, Osamu Hanaizumi, Tomihiro Kamiya, Takahiro Satoh, Junichi Susaki, Suzuya Yamada
  • Publication number: 20180244990
    Abstract: [Problem] To provide highly heat-resistant and radiation-resistant radiation measuring equipment. [Solution] Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.
    Type: Application
    Filed: August 25, 2016
    Publication date: August 30, 2018
    Inventors: Wataru Kada, Kenta Miura, Osamu Hanaizumi, Tomihiro Kamiya, Takahiro Satoh, Junichi Susaki, Suzuya Yamada
  • Patent number: 9401459
    Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: July 26, 2016
    Assignee: DENKA COMPANY LIMITED
    Inventors: Keita Kobayashi, Kohki Ichikawa, Yasuhito Fushii, Hideyuku Emoto, Suzuya Yamada
  • Patent number: 9309459
    Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: April 12, 2016
    Assignee: DENKA COMPANY, LIMITED
    Inventors: Keita Kobayashi, Yasuhito Fushii, Kohki Ichikawa, Suzuya Yamada, Hideyuku Emoto
  • Patent number: 9163175
    Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: October 20, 2015
    Assignee: DENKI KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Go Takeda, Hisayuki Hashimoto, Masayoshi Ichikawa, Tomohiro Nomiyama, Suzuya Yamada
  • Patent number: 9024519
    Abstract: Provided are an ?-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The ?-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12-(m+n)(Al)m+n(O)n(N)16-n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an ?-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the ?-SiAlON is 5 ?m or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the ?-SiAlON is preferably 0.56 or more.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: May 5, 2015
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Ryozo Nonogaki, Tomohiro Nomiyama, Mitsuru Kawagoe, Suzuya Yamada
  • Publication number: 20150084079
    Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.
    Type: Application
    Filed: August 9, 2012
    Publication date: March 26, 2015
    Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Keita Kobayashi, Yasuhito Fushii, Kohki Ichikawa, Suzuya Yamada, Hideyuku Emoto
  • Publication number: 20150054010
    Abstract: A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.
    Type: Application
    Filed: August 9, 2012
    Publication date: February 26, 2015
    Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Keita Kobayashi, Kohki Ichikawa, Yasuhito Fushii, Hideyuku Emoto, Suzuya Yamada
  • Patent number: 8945461
    Abstract: Provided is a production method of a ?-sialon phosphor that europium ions are solid-solved in ?-sialon, including a mixing process for mixing raw materials of the ?-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the ?-sialon phosphor; a HIP treatment process in which the ?-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the ?-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the ?-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a ?-sialon phosphor, a ?-sialon phosphor excellent in luminescence intensity is obtained.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: February 3, 2015
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Tomohiro Nomiyama, Suzuya Yamada, Hisayuki Hashimoto
  • Publication number: 20130293093
    Abstract: Provided are an ?-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The ?-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12?(m+n)(Al)m+n(O)n(N)16?n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an ?-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the ?-SiAlON is 5 ?m or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the ?-SiAlON is preferably 0.56 or more.
    Type: Application
    Filed: November 30, 2011
    Publication date: November 7, 2013
    Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Ryozo Nonogaki, Tomohiro Nomiyama, Mitsuru Kawagoe, Suzuya Yamada
  • Publication number: 20130093314
    Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.
    Type: Application
    Filed: July 28, 2011
    Publication date: April 18, 2013
    Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Go Takeda, Hisayuki Hashimoto, Masayoshi Ichikawa, Tomohiro Nomiyama, Suzuya Yamada
  • Publication number: 20120313507
    Abstract: A method for manufacturing ?-sialon, including: a mixing process wherein at least one of aluminum oxide and silicon oxide, silicon nitride, aluminum nitride, and europium compound are mixed; a burning process wherein the mixture having undergone the mixing process is heated at the temperature hither than 1950° C. but not exceeding 2200° C. for 10 hours or longer; and a heat treatment process wherein heat treatment is conducted after the burning process at the temperature from 1300° C. to 1600° C. in an atmosphere of inert gas other than nitrogen at the partial pressure of 10 kPa or lower.
    Type: Application
    Filed: July 15, 2011
    Publication date: December 13, 2012
    Applicant: KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Hisayuki Hashimoto, Suzuya Yamada, Hideyuki Emoto, Masayoshi Ichikawa
  • Publication number: 20120298919
    Abstract: A method of manufacturing ?-SiAlON represented by a general formula Si6-zAlzOzN8-z:Eu, including a baking step for baking a powdered material that contains Al content from 0.3 to 1.2 mass %, O content from 0.15 to 1 mass %, O/Al molar ratio from 0.9 to 1.3, Si content from 58 to 60 mass %, N content from 37 to 40 mass %, N/Si molar ratio from 1.25 to 1.45, and Eu content from 0.3 to 0.7 mass %. The baking step is a step of baking the powdered material in a nitrogen atmosphere at temperatures from 1850° C. to 2050° C., and the manufactured ?-SiAlON satisfies 0.280?x?0.340 and 0.630?y?0.675 on the CIExy chromaticity coordinate.
    Type: Application
    Filed: July 4, 2011
    Publication date: November 29, 2012
    Inventors: Go Takeda, Hisayuki Hashimoto, Hideyuki Emoto, Suzuya Yamada
  • Publication number: 20120223448
    Abstract: Provided is a production method of a ?-sialon phosphor that europium ions are solid-solved in ?-sialon, including a mixing process for mixing raw materials of the ?-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the ?-sialon phosphor; a HIP treatment process in which the ?-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the ?-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the ?-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a ?-sialon phosphor, a ?-sialon phosphor excellent in luminescence intensity is obtained.
    Type: Application
    Filed: November 1, 2010
    Publication date: September 6, 2012
    Inventors: Tomohiro Nomiyama, Suzuya Yamada, Hisayuki Hashimoto
  • Patent number: 7442661
    Abstract: A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 ?m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 ?m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 ?m to boron carbide particles having a particle diameter of at most 5 ?m, is from 0.02 to 0.6.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: October 28, 2008
    Assignees: National Institute of Advanced Industrial Science and Technology, Denki Kagku Kogyo Kabushiki Kaisha
    Inventors: Kiyoshi Hirao, Shuji Sakaguchi, Yukihiko Yamauchi, Shuzo Kanzaki, Suzuya Yamada