Abstract: The invention relates to an edge-emitting semiconductor laser diode, including the following features: an epitaxial semiconductor layer stack including an active one, in which during operation electromagnetic radiation is generated, wherein the epitaxial semiconductor layer stack has at least one facet which laterally delimits the epitaxial semiconductor layer stack, and the facet has at least one first partial surface and at least one second partial surface which have reflectivities differing from one another for the electromagnetic radiation generated in the active zone. The invention also relates to methods for producing a plurality of edge-emitting semiconductor laser diodes.

Abstract: A method for producing at least one laser chip is specified, the method including the steps of growing a semiconductor layer sequence having an active zone on a substrate, removing part of the substrate, part of the active zone and part of the semiconductor layer sequence by dry-chemical etching, thereby forming at least one side edge extending, at least in places, transversely or perpendicularly to the main plane of extent of the substrate, and removing part of the substrate, part of the active zone and part of the semiconductor layer sequence at the side edge by wet-chemical etching, the active zone being designed to emit laser radiation. A laser chip is additionally specified.

Abstract: A meat processing apparatus has an automated analysis stage for analysing meat parts with penetrating radiation. Data is generated for sue in both feedforward and feedback information, and may be used for robotic control of trimming and boning operations. There is a radiation-shielded chamber within which there is a tomography scanner with a scanner controller, arranged to perform analysis of meat parts. A port is used for entry and exit of meat parts placed in carriers into and out of the chamber for analysis by the scanner, and a handling system performs automated movement of the carriers between the port and the scanner. The port has an interlock chamber, having an inner door and an outer door and a controller to ensure that while the scanner is operating only one door can open.

Abstract: The invention relates to a surface-emitting semiconductor laser, including a first semiconductor layer of a first conductivity type, the first semiconductor layer being structured forming a mesa, an active zone for generating electromagnetic radiation and a second semiconductor layer of a second conductivity type. The first semiconductor layer, the active zone and the second semiconductor layer are arranged on top of one another forming a semiconductor layer stack. The surface-emitting semiconductor laser further comprises a sheath layer which adjoins a lateral wall of the mesa.

Abstract: The disclosed optoelectronic semiconductor chip includes a carrier, a semiconductor layer sequence on the carrier having at least one active zone for generating radiation, a layer of high optical refractive index on an output coupling facet of the semiconductor layer sequence for the output coupling of radiation, and a coating of low optical refractive index directly on an outer side of the layer of high optical refractive index for the total internal reflection of the radiation, wherein the semiconductor layer sequence is configured to guide the radiation in the active zone perpendicularly to a growth direction of the semiconductor layer sequence, and the layer of high optical refractive index is configured to deflect the radiation at the outer side parallel to the growth direction.

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Abstract: In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

Abstract: In an embodiment a method for manufacturing a light-emitting semiconductor chip includes providing a substrate having a main surface with at least one recess, the main surface having a main extension plane along the longitudinal direction and along a transversal direction perpendicular to the longitudinal direction, wherein the substrate has pre-patterning trenches formed along the transversal direction between chip regions and extending along the longitudinal direction, growing the semiconductor layer sequence on the main surface with the at least one recess and forming at least one facet aligned along the transversal direction in the semiconductor layer sequence by an etching process, wherein the facet has a distance of less than or equal to 50 ?m from the at least one recess in at least one direction parallel to the main extension plane of the main surface.

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 ?m. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

Abstract: The invention relates to a method for producing a plurality of semiconductor lasers, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method, wherein, when the substrate is seen from above, the recesses have in each case at least one transition, at which a first section of a side face of the recess and a second section of the side face of the recess form an angle of more than 180° in the recess; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the sing

Abstract: A method for producing a plurality of semiconductor lasers is specified, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction. Additionally, a semiconductor laser is specified.

Abstract: A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21).

Abstract: The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Abstract: The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation.

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.