Abstract: The invention relates to a novel method for producing high-purity SiO2 from silicate solutions, a novel high-purity SiO2 having a specific impurity spectrum and use thereof.

Abstract: The present invention relates to an isolated antibody or antigen-binding fragment thereof which specifically binds to mannose 6-phosphate and methods for preparing such antibody or antigen-binding fragment thereof. The invention further relates to a nucleic acid molecule encoding such antibody or antibody fragment, an expression vector comprising such nucleic acid molecule and a host cell comprising such nucleic acid molecule or expression vector. The invention also relates to a method for purifying or concentrating a target molecule comprising at least one mannose 6-phosphate residue from a sample. In another aspect, the invention relates to a method for diagnosing a disease which is characterized by an absent or reduced modification of molecules with mannose 6-phosphate residues.

Abstract: The invention relates to low-alkaline and bleach-free dishwasher detergents having a pH value (20° C.) between 8 and 12, comprising a) 10 to 60 wt % of citrate, b) 1.5 to 30 wt % anionic copolymer, comprising i) unsaturated monocarboxylic acid(s) A ii) unsaturated dicarboxylic acid(s) B, characterized by good cleaning action, particularly improved cleaning of tea.

Abstract: A device for suspending a rail of an overhead conveyor or a hoisting machine from a traversing gear or supporting structure includes a tension element, which carries the rail by one end via a fixing device. The fixing device grasps a support element of the rail. The support element widens and extends at least partly in the lengthwise direction of the rail. To provide a device for suspending a rail that provides enhanced safety against collapse, the fixing device includes two fixing parts, which are connected like pliers by means of a bolt running in the lengthwise direction of the rail. The fixing parts swivel toward each other from the open position into the fixing position by their fixing regions. The support element of the rail rests against the bearing surfaces of the fixing parts, even in the open position, when the fastening means are released.

Abstract: In sophisticated SOI devices, circuit elements, such as substrate diodes, may be formed in the crystalline substrate material on the basis of a substrate window, wherein the pronounced surface topography may be compensated for or at least reduced by performing additional planarization processes, such as the deposition of a planarization material, and a subsequent etch process when forming the contact level of the semiconductor device.

Abstract: A suspension device (10) with a carrier segment (12) and with at least one extension arm (14) that can be mounted pivotably thereon for moving in space devices (16, 18) that can be mounted thereon. The carrier segment (12) has a base part (24) for mounting the suspension device (10) at a mounting site. The suspension device has one or more quick-release rod modules (26) that can be detachably connected with the base part (24). The quick-release rod module (26) or each quick-release rod module (26) has a bus module (32), which contacts either a bus module (32) of a quick-release rod module (26) already embraced by the suspension device (10) or a contact device in the base part (24) when a quick-release rod module (26) is mounted on the suspension device (10).

Abstract: Contact elements of sophisticated semiconductor devices may be formed for gate electrode structures and for drain and source regions in separate process sequences in order to apply electroless plating techniques without causing undue overfill of one type of contact opening. Consequently, superior process uniformity in combination with a reduced overall contact resistance may be accomplished. In some illustrative embodiments, cobalt may be used as a contact metal without any additional conductive barrier materials.

Abstract: By performing a planarization process, for instance based on a planarization layer, prior to forming a resist mask for selectively removing a portion of a stressed contact etch stop layer, the strain-inducing mechanism of a subsequently deposited further contact etch stop layer may be significantly improved.

Abstract: Liquid, low-alkaline and bleach-free dishwasher detergent having a pH value (20° C.) of 8 to 12 and containing: a) 10 to 60 percent by weight of a builder; b) more than 1.5 percent by weight of a phosphonate; c) 0.1 to 20 percent by weight of an anionic copolymer comprising: i) unsaturated carboxylic acid(s) and ii) sulfonic acid group-containing monomer(s). Detergents according to the invention exhibit a good cleaning power on bleachable dirt, particularly tea stains.

Abstract: A device for suspending a rail, particularly a running rail of an overhead conveyor or of a lifting apparatus, on a traveling mechanism or supporting framework with a traction element, which is fastened at one end to the rail. The traction element is passed through by a bolt, which is fastened to the rail via a fixing device. The traction element consists of a single part and comprises a lower borehole for the bolt and an upper borehole for fastening to the traveling mechanism or to the supporting framework.

Abstract: An electron accelerator that generates a photon beam with an energy of more than 0.5 MeV by means of an electron beam charging a target has a vacuum chamber with an intake opening and an exit opening, and an electron source at the input side. The target is arranged outside the vacuum chamber in the region of the exit opening in a housing in which a window is present that is permeable to photons and that is arranged opposite the exit opening in the beam direction of the electron beam. The target is permeated by at least one cooling channel.

Abstract: Densely spaced gates of field effect transistors usually lead to voids in a contact interlayer dielectric. If such a void is opened by a contact via and filled with conductive material, an electrical short between neighboring contact regions of neighboring transistors may occur. By forming a recess between two neighboring contact regions, the void forms at a lower level. Thus, opening of the void by contact vias is prevented.

Abstract: Contact elements may be formed on the basis of a mask layer having openings, the width of which may be reduced by etching or deposition, thereby extending the process margins for a given lithography technique. Consequently, yield losses caused by short circuits in the contact level of sophisticated semiconductor devices may be reduced.

Abstract: Phosphate-free, bleaching agent-containing dishwasher detergents which contain a) citrate, b) bleaching catalyst selected from the group consisting of the bleach-boosting transition metal salts and transition metal complexes, c) copolymer(s) which comprise i) one or more acid group-containing monomer, ii) one or more additional hydrophobic monomer. The detergents have an improved bleaching action.

Abstract: An arrangement for axial securing of a grooved bolt includes a holding element and a securing element. The grooved bolt passes through the holding element in the axial direction. The securing element, which may be connected to the holding element, engages the groove of the bolt and secures the bolt in a locked position.

Abstract: By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.

Abstract: A device for suspending a rail, such as a travel rail of an overhead conveyor or a hoisting machine, from a traversing gear or supporting structure includes a tension element secured by one end to the rail. A bolt passes through the tension element and is received by a fixing device that is secured to the rail. The tension element is at least partly recessed in the fixing device in the direction of suspension. In order to provide a secure device that has a long service life and a low structural height, the tension element is fastened to the bolt by a ball-shaped joint, such as a pivoting bearing.

Abstract: Densely spaced gates of field effect transistors usually lead to voids in a contact interlayer dielectric. If such a void is opened by a contact via and filled with conductive material, an electrical short between neighboring contact regions of neighboring transistors may occur. By forming a recess between two neighboring contact regions, the void forms at a lower level. Thus, opening of the void by contact vias is prevented.

Abstract: By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.

Abstract: By performing a planarization process, for instance based on a planarization layer, prior to forming a resist mask for selectively removing a portion of a stressed contact etch stop layer, the strain-inducing mechanism of a subsequently deposited further contact etch stop layer may be significantly improved.